Продукція > SOLID STATE INC. > Всі товари виробника SOLID STATE INC. (1171) > Сторінка 19 з 20
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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MJ10024 | Solid State Inc. |
Description: TRANS NPN DARL 750V 20A TO3 Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 5V @ 5A, 20A Current - Collector Cutoff (Max): 250µA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5A, 5V Supplier Device Package: TO-3 Part Status: Active Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 750 V Power - Max: 250 W |
на замовлення 360 шт: термін постачання 21-31 дні (днів) |
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MJ11011 | Solid State Inc. |
Description: TRANS PNP DARL 60V 30A TO3 Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 4V @ 300mA, 30A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 20A, 5V Supplier Device Package: TO-3 Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 200 W |
товару немає в наявності |
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MJ11012 | Solid State Inc. |
Description: TRANS NPN DARL 60V 30A TO3 Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 4V @ 300mA, 30A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 20A, 5V Supplier Device Package: TO-3 Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 200 W |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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MJ11013 | Solid State Inc. |
Description: TRANS PNP DARL 90V 30A TO3 Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 4V @ 300mA, 30A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 20A, 5V Supplier Device Package: TO-3 Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 90 V Power - Max: 200 W |
товару немає в наявності |
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MJ11014 | Solid State Inc. |
Description: TRANS NPN DARL 90V 30A TO3 Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 4V @ 300mA, 30A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 20A, 5V Supplier Device Package: TO-3 Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 90 V Power - Max: 200 W |
товару немає в наявності |
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MJ11015 | Solid State Inc. |
Description: TRANS PNP DARL 120V 30A TO3 Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 4V @ 300mA, 30A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 20A, 5V Supplier Device Package: TO-3 Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 200 W |
на замовлення 200 шт: термін постачання 21-31 дні (днів) |
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MJ13333 | Solid State Inc. |
Description: TRANS NPN 400V 20A TO3 Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 5V @ 6.7A, 20A Current - Collector Cutoff (Max): 5mA DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V Supplier Device Package: TO-3 Part Status: Active Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 275 W |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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MJ13335 | Solid State Inc. |
Description: TRANS NPN 500V 20A TO3 Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 5V @ 6.7A, 20A Current - Collector Cutoff (Max): 5mA DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V Supplier Device Package: TO-3 Part Status: Active Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 500 V Power - Max: 275 W |
на замовлення 20 шт: термін постачання 21-31 дні (днів) |
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MJ15022 | Solid State Inc. |
Description: TRANS NPN 200V 16A TO3 Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 4V @ 3.2A, 16A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 8A, 4V Frequency - Transition: 4MHz Supplier Device Package: TO-3 Part Status: Active Current - Collector (Ic) (Max): 16 A Voltage - Collector Emitter Breakdown (Max): 200 V Power - Max: 250 W |
товару немає в наявності |
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MJ15023 | Solid State Inc. |
Description: TRANS PNP 200V 16A TO3 Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 4V @ 3.2A, 16A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 8A, 4V Frequency - Transition: 4MHz Supplier Device Package: TO-3 Part Status: Active Current - Collector (Ic) (Max): 16 A Voltage - Collector Emitter Breakdown (Max): 200 V Power - Max: 250 W |
товару немає в наявності |
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MJ15024 | Solid State Inc. |
Description: TRANS NPN 250V 16A TO3 Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 1.4V @ 800mA, 8A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 8A, 4V Frequency - Transition: 4MHz Supplier Device Package: TO-3 Part Status: Active Current - Collector (Ic) (Max): 16 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 250 W |
товару немає в наявності |
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MJ15025 | Solid State Inc. |
Description: TRANS PNP 250V 16A TO3 Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 4V @ 3.2A, 16A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 8A, 4V Frequency - Transition: 4MHz Supplier Device Package: TO-3 Part Status: Active Current - Collector (Ic) (Max): 16 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 250 W |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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MJ16018 | Solid State Inc. |
Description: TRANS NPN 750V 10A TO3 Packaging: Box Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 5V @ 5A, 10A Current - Collector Cutoff (Max): 250µA DC Current Gain (hFE) (Min) @ Ic, Vce: 4 @ 5A, 5V Supplier Device Package: TO-3 Part Status: Active Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 750 V Power - Max: 175 W |
на замовлення 500 шт: термін постачання 21-31 дні (днів) |
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MR1120 | Solid State Inc. | Description: DIODE GEN PURP 50V 12A DO4 |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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MR1120R | Solid State Inc. | Description: DIODE GEN PURP 50V 12A DO4 |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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MR1121 | Solid State Inc. |
Description: DIODE GEN PURP 100V 12A DO4 Packaging: Box Package / Case: DO-203AA, DO-4, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 12A Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 190°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 12 A Current - Reverse Leakage @ Vr: 500 µA @ 100 V |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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MR1121R | Solid State Inc. | Description: DIODE GEN PURP 100V 12A DO4 |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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MR1122 | Solid State Inc. | Description: DIODE GEN PURP 200V 12A DO4 |
на замовлення 20 шт: термін постачання 21-31 дні (днів) |
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MR1122R | Solid State Inc. | Description: DIODE GEN PURP 200V 12A DO4 |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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MR1123 | Solid State Inc. | Description: DIODE GEN PURP 300V 12A DO4 |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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MR1123R | Solid State Inc. | Description: DIODE GEN PURP 300V 12A DO4 |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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MR1124 | Solid State Inc. |
Description: DIODE GEN PURP 400V 12A DO4 Packaging: Box Package / Case: DO-203AA, DO-4, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 12A Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 190°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 12 A Current - Reverse Leakage @ Vr: 500 µA @ 400 V |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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MR1124R | Solid State Inc. | Description: DIODE GEN PURP 400V 12A DO4 |
на замовлення 20 шт: термін постачання 21-31 дні (днів) |
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MR1125 | Solid State Inc. |
Description: DIODE GEN PURP 500V 12A DO4 Packaging: Box Package / Case: DO-203AA, DO-4, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 12A Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 190°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 500 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 12 A Current - Reverse Leakage @ Vr: 500 µA @ 50 V |
на замовлення 20 шт: термін постачання 21-31 дні (днів) |
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MR1125R | Solid State Inc. |
Description: DIODE GEN PURP 500V 12A DO4 Packaging: Box Package / Case: DO-203AA, DO-4, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 12A Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 190°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 500 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 12 A Current - Reverse Leakage @ Vr: 500 µA @ 50 V |
на замовлення 20 шт: термін постачання 21-31 дні (днів) |
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MR1126 | Solid State Inc. | Description: DIODE GEN PURP 600V 12A DO4 |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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MR1126R | Solid State Inc. | Description: DIODE GEN PURP 600V 12A DO4 |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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MR1128 | Solid State Inc. |
Description: DIODE GEN PURP 800V 12A DO4 Packaging: Box Package / Case: DO-203AA, DO-4, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 12A Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 190°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 12 A Current - Reverse Leakage @ Vr: 500 µA @ 800 V |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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MR1128R | Solid State Inc. |
Description: DIODE GEN PURP 800V 12A DO4 Packaging: Box Package / Case: DO-203AA, DO-4, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 12A Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 190°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 12 A Current - Reverse Leakage @ Vr: 500 µA @ 800 V |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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MR1130 | Solid State Inc. | Description: DIODE GEN PURP 1KV 12A DO4 |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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MR1130R | Solid State Inc. | Description: DIODE GEN PURP 1KV 12A DO4 |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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MR501 | Solid State Inc. | Description: DIODE GEN PURP 100V 3A AXIAL |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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MR502 | Solid State Inc. |
Description: DIODE GEN PURP 200V 3A AXIAL Packaging: Bulk Package / Case: Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 9.4 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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MR504 | Solid State Inc. | Description: DIODE GEN PURP 400V 3A AXIAL |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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MR506 | Solid State Inc. |
Description: DIODE GEN PURP 600V 3A AXIAL Packaging: Bulk Package / Case: Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 9.4 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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MR508 | Solid State Inc. |
Description: DIODE GEN PURP 800V 3A AXIAL Packaging: Bulk Package / Case: Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 9.4 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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MR510 | Solid State Inc. |
Description: DIODE GEN PURP 1KV 3A AXIAL Packaging: Bulk Package / Case: Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 9.4 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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MR750 | Solid State Inc. |
Description: DIODE GEN PURP 50V 6A Packaging: Box Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 6A Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
товару немає в наявності |
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MR754 | Solid State Inc. |
Description: DIODE GEN PURP 400V 6A Packaging: Box Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 6A Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A Current - Reverse Leakage @ Vr: 25 µA @ 400 V |
на замовлення 1200 шт: термін постачання 21-31 дні (днів) |
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MR756 | Solid State Inc. |
Description: DIODE GEN PURP 600V 6A Packaging: Box Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 6A Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A Current - Reverse Leakage @ Vr: 25 µA @ 600 V |
товару немає в наявності |
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MR758 | Solid State Inc. | Description: DIODE GP 800V 6A LEADED BUTTON |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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MR760 | Solid State Inc. |
Description: DIODE GEN PURP 1KV 6A Packaging: Box Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 6A Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A Current - Reverse Leakage @ Vr: 25 µA @ 1000 V |
на замовлення 3850 шт: термін постачання 21-31 дні (днів) |
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MUR1605CT | Solid State Inc. |
Description: DIODE GEN PURP 50V 16A TO220 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 16A Supplier Device Package: TO-220 Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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MUR2510 | Solid State Inc. |
Description: DIODE GEN PURP 100V 25A DO4 Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 25A Supplier Device Package: DO-4 Voltage - DC Reverse (Vr) (Max): 100 V |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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MUR2515 | Solid State Inc. |
Description: D-04 STUD ULTRAFAST RECTIFIER 25 Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 25A Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 25 A Current - Reverse Leakage @ Vr: 10 µA @ 150 V |
на замовлення 40 шт: термін постачання 21-31 дні (днів) |
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MUR2520 | Solid State Inc. |
Description: DIODE GEN PURP 200V 25A DO4 Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 25A Supplier Device Package: DO-4 Voltage - DC Reverse (Vr) (Max): 200 V |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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MUR3015PT | Solid State Inc. |
Description: T0-218 ULTRAFAST RECTIFIER 30 AM Packaging: Bulk Package / Case: TO-218-3, TO-218AC Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: TO-218AC Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A Current - Reverse Leakage @ Vr: 10 µA @ 150 V |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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MUR5010 | Solid State Inc. |
Description: DIODE GEN PURP 100V 50A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 50A Supplier Device Package: DO-5 Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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MUR5015 | Solid State Inc. |
Description: D0-5 STUD ULTRAFAST RECTIFIER 50 Packaging: Bulk Part Status: Active |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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MUR5020 | Solid State Inc. |
Description: DIODE GEN PURP 200V 50A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Current - Average Rectified (Io): 50A Supplier Device Package: DO-5 Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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PMD11K100 | Solid State Inc. | Description: TRANS PNP DARL 100V 12A TO3 |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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PMD11K80 | Solid State Inc. | Description: TRANS PNP DARL 80V 12A TO3 |
на замовлення 20 шт: термін постачання 21-31 дні (днів) |
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PMD12K100 | Solid State Inc. |
Description: TRANS NPN DARL 100V 8A TO3 Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: NPN - Darlington Supplier Device Package: TO-3 Part Status: Active Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 100 V |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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PMD13K100 | Solid State Inc. | Description: TRANS PNP DARL 80V 12A TO3 |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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PMD13K40 | Solid State Inc. |
Description: TRANS PNP DARL 40V 8A TO3 Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: -65°C ~ 200°C (TJ) DC Current Gain (hFE) (Min) @ Ic, Vce: 800 @ 4A, 2V Frequency - Transition: 4MHz Supplier Device Package: TO-3 Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 100 W |
на замовлення 300 шт: термін постачання 21-31 дні (днів) |
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PMD13K80 | Solid State Inc. | Description: TRANS PNP DARL 80V 8A TO3 |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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PMD16K100 | Solid State Inc. |
Description: TRANS NPN DARL 100V 20A TO3 Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: NPN - Darlington Supplier Device Package: TO-3 Part Status: Active Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 100 V |
товару немає в наявності |
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PMD17K100 | Solid State Inc. | Description: TRANS PNP DARL 100V 20A TO3 |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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PMD17K80 | Solid State Inc. | Description: TRANS PNP DARL 80V 20A TO3 |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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RCA423 | Solid State Inc. |
Description: TRANS NPN TO3 Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: NPN Supplier Device Package: TO-3 Part Status: Active |
товару немає в наявності |
MJ10024 |
Виробник: Solid State Inc.
Description: TRANS NPN DARL 750V 20A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 5A, 20A
Current - Collector Cutoff (Max): 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5A, 5V
Supplier Device Package: TO-3
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Power - Max: 250 W
Description: TRANS NPN DARL 750V 20A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 5A, 20A
Current - Collector Cutoff (Max): 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5A, 5V
Supplier Device Package: TO-3
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Power - Max: 250 W
на замовлення 360 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 921.26 грн |
MJ11011 |
Виробник: Solid State Inc.
Description: TRANS PNP DARL 60V 30A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 300mA, 30A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 20A, 5V
Supplier Device Package: TO-3
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 200 W
Description: TRANS PNP DARL 60V 30A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 300mA, 30A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 20A, 5V
Supplier Device Package: TO-3
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 200 W
товару немає в наявності
MJ11012 |
Виробник: Solid State Inc.
Description: TRANS NPN DARL 60V 30A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 300mA, 30A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 20A, 5V
Supplier Device Package: TO-3
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 200 W
Description: TRANS NPN DARL 60V 30A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 300mA, 30A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 20A, 5V
Supplier Device Package: TO-3
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 200 W
на замовлення 5 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 383.86 грн |
MJ11013 |
Виробник: Solid State Inc.
Description: TRANS PNP DARL 90V 30A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 300mA, 30A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 20A, 5V
Supplier Device Package: TO-3
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 90 V
Power - Max: 200 W
Description: TRANS PNP DARL 90V 30A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 300mA, 30A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 20A, 5V
Supplier Device Package: TO-3
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 90 V
Power - Max: 200 W
товару немає в наявності
MJ11014 |
Виробник: Solid State Inc.
Description: TRANS NPN DARL 90V 30A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 300mA, 30A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 20A, 5V
Supplier Device Package: TO-3
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 90 V
Power - Max: 200 W
Description: TRANS NPN DARL 90V 30A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 300mA, 30A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 20A, 5V
Supplier Device Package: TO-3
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 90 V
Power - Max: 200 W
товару немає в наявності
MJ11015 |
Виробник: Solid State Inc.
Description: TRANS PNP DARL 120V 30A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 300mA, 30A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 20A, 5V
Supplier Device Package: TO-3
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 200 W
Description: TRANS PNP DARL 120V 30A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 300mA, 30A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 20A, 5V
Supplier Device Package: TO-3
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 200 W
на замовлення 200 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 350 грн |
MJ13333 |
Виробник: Solid State Inc.
Description: TRANS NPN 400V 20A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 6.7A, 20A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
Supplier Device Package: TO-3
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 275 W
Description: TRANS NPN 400V 20A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 6.7A, 20A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
Supplier Device Package: TO-3
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 275 W
на замовлення 50 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 383.86 грн |
MJ13335 |
Виробник: Solid State Inc.
Description: TRANS NPN 500V 20A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 6.7A, 20A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
Supplier Device Package: TO-3
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 275 W
Description: TRANS NPN 500V 20A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 6.7A, 20A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
Supplier Device Package: TO-3
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 275 W
на замовлення 20 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 383.86 грн |
MJ15022 |
Виробник: Solid State Inc.
Description: TRANS NPN 200V 16A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 3.2A, 16A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 8A, 4V
Frequency - Transition: 4MHz
Supplier Device Package: TO-3
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 250 W
Description: TRANS NPN 200V 16A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 3.2A, 16A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 8A, 4V
Frequency - Transition: 4MHz
Supplier Device Package: TO-3
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 250 W
товару немає в наявності
MJ15023 |
Виробник: Solid State Inc.
Description: TRANS PNP 200V 16A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 3.2A, 16A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 8A, 4V
Frequency - Transition: 4MHz
Supplier Device Package: TO-3
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 250 W
Description: TRANS PNP 200V 16A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 3.2A, 16A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 8A, 4V
Frequency - Transition: 4MHz
Supplier Device Package: TO-3
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 250 W
товару немає в наявності
MJ15024 |
Виробник: Solid State Inc.
Description: TRANS NPN 250V 16A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 800mA, 8A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 8A, 4V
Frequency - Transition: 4MHz
Supplier Device Package: TO-3
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 250 W
Description: TRANS NPN 250V 16A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 800mA, 8A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 8A, 4V
Frequency - Transition: 4MHz
Supplier Device Package: TO-3
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 250 W
товару немає в наявності
MJ15025 |
Виробник: Solid State Inc.
Description: TRANS PNP 250V 16A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 3.2A, 16A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 8A, 4V
Frequency - Transition: 4MHz
Supplier Device Package: TO-3
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 250 W
Description: TRANS PNP 250V 16A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 3.2A, 16A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 8A, 4V
Frequency - Transition: 4MHz
Supplier Device Package: TO-3
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 250 W
на замовлення 600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 594.91 грн |
MJ16018 |
Виробник: Solid State Inc.
Description: TRANS NPN 750V 10A TO3
Packaging: Box
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 5A, 10A
Current - Collector Cutoff (Max): 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 4 @ 5A, 5V
Supplier Device Package: TO-3
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Power - Max: 175 W
Description: TRANS NPN 750V 10A TO3
Packaging: Box
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 5A, 10A
Current - Collector Cutoff (Max): 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 4 @ 5A, 5V
Supplier Device Package: TO-3
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Power - Max: 175 W
на замовлення 500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 959.65 грн |
MR1120 |
Виробник: Solid State Inc.
Description: DIODE GEN PURP 50V 12A DO4
Description: DIODE GEN PURP 50V 12A DO4
на замовлення 50 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 144.41 грн |
MR1120R |
Виробник: Solid State Inc.
Description: DIODE GEN PURP 50V 12A DO4
Description: DIODE GEN PURP 50V 12A DO4
на замовлення 50 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 144.41 грн |
MR1121 |
Виробник: Solid State Inc.
Description: DIODE GEN PURP 100V 12A DO4
Packaging: Box
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 190°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Description: DIODE GEN PURP 100V 12A DO4
Packaging: Box
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 190°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
на замовлення 50 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 140.03 грн |
MR1121R |
Виробник: Solid State Inc.
Description: DIODE GEN PURP 100V 12A DO4
Description: DIODE GEN PURP 100V 12A DO4
на замовлення 50 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 144.41 грн |
MR1122 |
Виробник: Solid State Inc.
Description: DIODE GEN PURP 200V 12A DO4
Description: DIODE GEN PURP 200V 12A DO4
на замовлення 20 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 144.41 грн |
MR1122R |
Виробник: Solid State Inc.
Description: DIODE GEN PURP 200V 12A DO4
Description: DIODE GEN PURP 200V 12A DO4
на замовлення 50 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 144.41 грн |
MR1123 |
Виробник: Solid State Inc.
Description: DIODE GEN PURP 300V 12A DO4
Description: DIODE GEN PURP 300V 12A DO4
на замовлення 50 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 144.41 грн |
MR1123R |
Виробник: Solid State Inc.
Description: DIODE GEN PURP 300V 12A DO4
Description: DIODE GEN PURP 300V 12A DO4
на замовлення 50 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 144.41 грн |
MR1124 |
Виробник: Solid State Inc.
Description: DIODE GEN PURP 400V 12A DO4
Packaging: Box
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 190°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 400 V
Description: DIODE GEN PURP 400V 12A DO4
Packaging: Box
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 190°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 400 V
на замовлення 50 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 140.03 грн |
MR1124R |
Виробник: Solid State Inc.
Description: DIODE GEN PURP 400V 12A DO4
Description: DIODE GEN PURP 400V 12A DO4
на замовлення 20 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 144.41 грн |
MR1125 |
Виробник: Solid State Inc.
Description: DIODE GEN PURP 500V 12A DO4
Packaging: Box
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 190°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Description: DIODE GEN PURP 500V 12A DO4
Packaging: Box
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 190°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
на замовлення 20 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 140.03 грн |
MR1125R |
Виробник: Solid State Inc.
Description: DIODE GEN PURP 500V 12A DO4
Packaging: Box
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 190°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Description: DIODE GEN PURP 500V 12A DO4
Packaging: Box
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 190°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
на замовлення 20 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 140.03 грн |
MR1126 |
Виробник: Solid State Inc.
Description: DIODE GEN PURP 600V 12A DO4
Description: DIODE GEN PURP 600V 12A DO4
на замовлення 50 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 141.03 грн |
MR1126R |
Виробник: Solid State Inc.
Description: DIODE GEN PURP 600V 12A DO4
Description: DIODE GEN PURP 600V 12A DO4
на замовлення 50 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 141.03 грн |
MR1128 |
Виробник: Solid State Inc.
Description: DIODE GEN PURP 800V 12A DO4
Packaging: Box
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 190°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 800 V
Description: DIODE GEN PURP 800V 12A DO4
Packaging: Box
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 190°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 800 V
на замовлення 50 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 140.03 грн |
MR1128R |
Виробник: Solid State Inc.
Description: DIODE GEN PURP 800V 12A DO4
Packaging: Box
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 190°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 800 V
Description: DIODE GEN PURP 800V 12A DO4
Packaging: Box
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 190°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 800 V
на замовлення 50 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 140.03 грн |
MR1130 |
Виробник: Solid State Inc.
Description: DIODE GEN PURP 1KV 12A DO4
Description: DIODE GEN PURP 1KV 12A DO4
на замовлення 50 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 144.41 грн |
MR1130R |
Виробник: Solid State Inc.
Description: DIODE GEN PURP 1KV 12A DO4
Description: DIODE GEN PURP 1KV 12A DO4
на замовлення 50 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 144.41 грн |
MR501 |
Виробник: Solid State Inc.
Description: DIODE GEN PURP 100V 3A AXIAL
Description: DIODE GEN PURP 100V 3A AXIAL
на замовлення 50 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
20+ | 25.99 грн |
MR502 |
Виробник: Solid State Inc.
Description: DIODE GEN PURP 200V 3A AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 9.4 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 3A AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 9.4 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 50 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
20+ | 23.95 грн |
MR504 |
Виробник: Solid State Inc.
Description: DIODE GEN PURP 400V 3A AXIAL
Description: DIODE GEN PURP 400V 3A AXIAL
на замовлення 50 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
20+ | 38.92 грн |
MR506 |
Виробник: Solid State Inc.
Description: DIODE GEN PURP 600V 3A AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 9.4 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE GEN PURP 600V 3A AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 9.4 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 50 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
20+ | 23.95 грн |
MR508 |
Виробник: Solid State Inc.
Description: DIODE GEN PURP 800V 3A AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 9.4 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: DIODE GEN PURP 800V 3A AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 9.4 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
20+ | 25.6 грн |
MR510 |
Виробник: Solid State Inc.
Description: DIODE GEN PURP 1KV 3A AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 9.4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE GEN PURP 1KV 3A AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 9.4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 50 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
20+ | 25.6 грн |
MR750 |
Виробник: Solid State Inc.
Description: DIODE GEN PURP 50V 6A
Packaging: Box
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Description: DIODE GEN PURP 50V 6A
Packaging: Box
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
товару немає в наявності
MR754 |
Виробник: Solid State Inc.
Description: DIODE GEN PURP 400V 6A
Packaging: Box
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
Description: DIODE GEN PURP 400V 6A
Packaging: Box
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
на замовлення 1200 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
20+ | 69.09 грн |
MR756 |
Виробник: Solid State Inc.
Description: DIODE GEN PURP 600V 6A
Packaging: Box
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Description: DIODE GEN PURP 600V 6A
Packaging: Box
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
товару немає в наявності
MR758 |
Виробник: Solid State Inc.
Description: DIODE GP 800V 6A LEADED BUTTON
Description: DIODE GP 800V 6A LEADED BUTTON
на замовлення 50 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 62.26 грн |
MR760 |
Виробник: Solid State Inc.
Description: DIODE GEN PURP 1KV 6A
Packaging: Box
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 25 µA @ 1000 V
Description: DIODE GEN PURP 1KV 6A
Packaging: Box
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 25 µA @ 1000 V
на замовлення 3850 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
50+ | 64.81 грн |
MUR1605CT |
Виробник: Solid State Inc.
Description: DIODE GEN PURP 50V 16A TO220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Description: DIODE GEN PURP 50V 16A TO220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
на замовлення 50 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 41.99 грн |
MUR2510 |
Виробник: Solid State Inc.
Description: DIODE GEN PURP 100V 25A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-4
Voltage - DC Reverse (Vr) (Max): 100 V
Description: DIODE GEN PURP 100V 25A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-4
Voltage - DC Reverse (Vr) (Max): 100 V
на замовлення 50 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 678.2 грн |
MUR2515 |
Виробник: Solid State Inc.
Description: D-04 STUD ULTRAFAST RECTIFIER 25
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Description: D-04 STUD ULTRAFAST RECTIFIER 25
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
на замовлення 40 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 678.2 грн |
MUR2520 |
Виробник: Solid State Inc.
Description: DIODE GEN PURP 200V 25A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-4
Voltage - DC Reverse (Vr) (Max): 200 V
Description: DIODE GEN PURP 200V 25A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: DO-4
Voltage - DC Reverse (Vr) (Max): 200 V
на замовлення 50 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 678.2 грн |
MUR3015PT |
Виробник: Solid State Inc.
Description: T0-218 ULTRAFAST RECTIFIER 30 AM
Packaging: Bulk
Package / Case: TO-218-3, TO-218AC
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-218AC
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Description: T0-218 ULTRAFAST RECTIFIER 30 AM
Packaging: Bulk
Package / Case: TO-218-3, TO-218AC
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-218AC
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
на замовлення 50 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 122.84 грн |
MUR5010 |
Виробник: Solid State Inc.
Description: DIODE GEN PURP 100V 50A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: DO-5
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Description: DIODE GEN PURP 100V 50A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: DO-5
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
на замовлення 50 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 454.8 грн |
MUR5015 |
Виробник: Solid State Inc.
Description: D0-5 STUD ULTRAFAST RECTIFIER 50
Packaging: Bulk
Part Status: Active
Description: D0-5 STUD ULTRAFAST RECTIFIER 50
Packaging: Bulk
Part Status: Active
на замовлення 50 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 502.7 грн |
MUR5020 |
Виробник: Solid State Inc.
Description: DIODE GEN PURP 200V 50A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: DO-5
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE GEN PURP 200V 50A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: DO-5
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
на замовлення 50 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 598.44 грн |
PMD11K100 |
Виробник: Solid State Inc.
Description: TRANS PNP DARL 100V 12A TO3
Description: TRANS PNP DARL 100V 12A TO3
на замовлення 50 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 144.72 грн |
PMD11K80 |
Виробник: Solid State Inc.
Description: TRANS PNP DARL 80V 12A TO3
Description: TRANS PNP DARL 80V 12A TO3
на замовлення 20 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 144.72 грн |
PMD12K100 |
Виробник: Solid State Inc.
Description: TRANS NPN DARL 100V 8A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Supplier Device Package: TO-3
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Description: TRANS NPN DARL 100V 8A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Supplier Device Package: TO-3
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
на замовлення 50 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 153.54 грн |
PMD13K100 |
Виробник: Solid State Inc.
Description: TRANS PNP DARL 80V 12A TO3
Description: TRANS PNP DARL 80V 12A TO3
на замовлення 50 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 188.09 грн |
PMD13K40 |
Виробник: Solid State Inc.
Description: TRANS PNP DARL 40V 8A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce: 800 @ 4A, 2V
Frequency - Transition: 4MHz
Supplier Device Package: TO-3
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 100 W
Description: TRANS PNP DARL 40V 8A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce: 800 @ 4A, 2V
Frequency - Transition: 4MHz
Supplier Device Package: TO-3
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 100 W
на замовлення 300 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 189.32 грн |
PMD13K80 |
Виробник: Solid State Inc.
Description: TRANS PNP DARL 80V 8A TO3
Description: TRANS PNP DARL 80V 8A TO3
на замовлення 50 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 188.09 грн |
PMD16K100 |
Виробник: Solid State Inc.
Description: TRANS NPN DARL 100V 20A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Supplier Device Package: TO-3
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Description: TRANS NPN DARL 100V 20A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Supplier Device Package: TO-3
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 100 V
товару немає в наявності
PMD17K100 |
Виробник: Solid State Inc.
Description: TRANS PNP DARL 100V 20A TO3
Description: TRANS PNP DARL 100V 20A TO3
на замовлення 50 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 188.09 грн |
PMD17K80 |
Виробник: Solid State Inc.
Description: TRANS PNP DARL 80V 20A TO3
Description: TRANS PNP DARL 80V 20A TO3
на замовлення 50 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 188.09 грн |
RCA423 |
Виробник: Solid State Inc.
Description: TRANS NPN TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Supplier Device Package: TO-3
Part Status: Active
Description: TRANS NPN TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Supplier Device Package: TO-3
Part Status: Active
товару немає в наявності