Продукція > SHINDENGEN > Всі товари виробника SHINDENGEN (3790) > Сторінка 42 з 64
| Фото | Назва | Виробник | Інформація |
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| P50B6EA-5071 | SHINDENGEN |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; EETMOS2; unipolar; FB (TO252AA) Type of transistor: N-MOSFET Technology: EETMOS2 Polarisation: unipolar Case: FB (TO252AA) Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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P50F10SN-5600 | SHINDENGEN |
Category: THT N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 50A; Idm: 200A; 51W Type of transistor: N-MOSFET Technology: EETMOS3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 50A Pulsed drain current: 200A Power dissipation: 51W Case: FTO-220AG (SC91) Gate-source voltage: ±20V On-state resistance: 8.7mΩ Mounting: THT Gate charge: 114nC Kind of package: bulk Kind of channel: enhanced |
на замовлення 261 шт: термін постачання 21-30 дні (днів) |
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P50F10SN-5600 | SHINDENGEN |
Category: THT N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 50A; Idm: 200A; 51W Type of transistor: N-MOSFET Technology: EETMOS3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 50A Pulsed drain current: 200A Power dissipation: 51W Case: FTO-220AG (SC91) Gate-source voltage: ±20V On-state resistance: 8.7mΩ Mounting: THT Gate charge: 114nC Kind of package: bulk Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 261 шт: термін постачання 14-21 дні (днів) |
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| P50LF10SL-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 50A; Idm: 200A; 217W Type of transistor: N-MOSFET Technology: EETMOS3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 50A Pulsed drain current: 200A Power dissipation: 217W Case: LF (MO235B similar) Gate-source voltage: ±20V On-state resistance: 11.3mΩ Mounting: SMD Gate charge: 102nC Kind of package: reel; tape Kind of channel: enhanced |
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| P50LF10SL-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 50A; Idm: 200A; 217W Type of transistor: N-MOSFET Technology: EETMOS3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 50A Pulsed drain current: 200A Power dissipation: 217W Case: LF (MO235B similar) Gate-source voltage: ±20V On-state resistance: 11.3mΩ Mounting: SMD Gate charge: 102nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| P50LF10SLK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 50A; Idm: 200A; 217W Type of transistor: N-MOSFET Technology: EETMOS3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 50A Pulsed drain current: 200A Power dissipation: 217W Case: LF (MO235B similar) Gate-source voltage: ±20V On-state resistance: 11.3mΩ Mounting: SMD Gate charge: 102nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
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| P50LF10SLK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 50A; Idm: 200A; 217W Type of transistor: N-MOSFET Technology: EETMOS3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 50A Pulsed drain current: 200A Power dissipation: 217W Case: LF (MO235B similar) Gate-source voltage: ±20V On-state resistance: 11.3mΩ Mounting: SMD Gate charge: 102nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
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| P50LF10SN-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 50A; Idm: 200A; 217W Type of transistor: N-MOSFET Technology: EETMOS3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 50A Pulsed drain current: 200A Power dissipation: 217W Case: LF (MO235B similar) Gate-source voltage: ±20V On-state resistance: 10.4mΩ Mounting: SMD Gate charge: 80nC Kind of package: reel; tape Kind of channel: enhanced |
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| P50LF10SN-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 50A; Idm: 200A; 217W Type of transistor: N-MOSFET Technology: EETMOS3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 50A Pulsed drain current: 200A Power dissipation: 217W Case: LF (MO235B similar) Gate-source voltage: ±20V On-state resistance: 10.4mΩ Mounting: SMD Gate charge: 80nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| P50LF10SNK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 50A; Idm: 200A; 217W Type of transistor: N-MOSFET Technology: EETMOS3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 50A Pulsed drain current: 200A Power dissipation: 217W Case: LF (MO235B similar) Gate-source voltage: ±20V On-state resistance: 10.4mΩ Mounting: SMD Gate charge: 80nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
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| P50LF10SNK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 50A; Idm: 200A; 217W Type of transistor: N-MOSFET Technology: EETMOS3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 50A Pulsed drain current: 200A Power dissipation: 217W Case: LF (MO235B similar) Gate-source voltage: ±20V On-state resistance: 10.4mΩ Mounting: SMD Gate charge: 80nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
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| P50LF4QTKD-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 150A; 62W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 50A Pulsed drain current: 150A Power dissipation: 62W Case: LF (MO235B similar) Gate-source voltage: ±10V On-state resistance: 5.5mΩ Mounting: SMD Gate charge: 35nC Kind of package: reel; tape Kind of channel: enhanced |
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| P50LF4QTKD-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 150A; 62W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 50A Pulsed drain current: 150A Power dissipation: 62W Case: LF (MO235B similar) Gate-source voltage: ±10V On-state resistance: 5.5mΩ Mounting: SMD Gate charge: 35nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| P54B4SN-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 40V; 54A; Idm: 162A; 44W Type of transistor: N-MOSFET Technology: EETMOS3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 54A Pulsed drain current: 162A Power dissipation: 44W Case: FB (TO252AA) Gate-source voltage: ±20V On-state resistance: 6.3mΩ Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhanced |
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| P54B4SN-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 40V; 54A; Idm: 162A; 44W Type of transistor: N-MOSFET Technology: EETMOS3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 54A Pulsed drain current: 162A Power dissipation: 44W Case: FB (TO252AA) Gate-source voltage: ±20V On-state resistance: 6.3mΩ Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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P55F6EN-5600 | Shindengen |
MOSFET 60V, 55A EETMOS POWER MOSFET |
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| P55F6EN-5600 | SHINDENGEN | P55F6EN-5600 THT N channel transistors |
на замовлення 63 шт: термін постачання 14-21 дні (днів) |
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| P56LA4SN-5070 | SHINDENGEN | P56LA4SN-5070 SMD N channel transistors |
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| P58LF6GLK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; LF (MO235B similar) Type of transistor: N-MOSFET Case: LF (MO235B similar) Mounting: SMD |
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| P58LF6GLK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; LF (MO235B similar) Type of transistor: N-MOSFET Case: LF (MO235B similar) Mounting: SMD кількість в упаковці: 1 шт |
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| P58LF6GMK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; LF (MO235B similar) Type of transistor: N-MOSFET Case: LF (MO235B similar) Mounting: SMD |
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| P58LF6GMK-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; LF (MO235B similar) Type of transistor: N-MOSFET Case: LF (MO235B similar) Mounting: SMD кількість в упаковці: 1 шт |
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| P5B50HP2F-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 5A; 54W; FB (TO252AA) Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5A Power dissipation: 54W Case: FB (TO252AA) Gate-source voltage: ±10V On-state resistance: 1.65mΩ Mounting: SMD Gate charge: 10.5nC Kind of package: reel; tape Kind of channel: enhanced |
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| P5B50HP2F-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 5A; 54W; FB (TO252AA) Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5A Power dissipation: 54W Case: FB (TO252AA) Gate-source voltage: ±10V On-state resistance: 1.65mΩ Mounting: SMD Gate charge: 10.5nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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P5B52HP2-5071 | Shindengen |
MOSFET Hi Voltage Low Noise |
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| P5B52HP2-5071 | SHINDENGEN | P5B52HP2-5071 SMD N channel transistors |
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P5F50HP2-5600 | Shindengen |
MOSFET High Switching Speed High Voltage |
на замовлення 82 шт: термін постачання 21-30 дні (днів) |
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| P5F50HP2-5600 | SHINDENGEN | P5F50HP2-5600 THT N channel transistors |
на замовлення 100 шт: термін постачання 14-21 дні (днів) |
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| P5F50HP2F-5600 | SHINDENGEN | P5F50HP2F-5600 THT N channel transistors |
на замовлення 72 шт: термін постачання 14-21 дні (днів) |
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P5F60HP2-5600 | SHINDENGEN |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 5A; Idm: 20A; 65W Type of transistor: N-MOSFET Technology: Hi-PotMOS2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 5A Pulsed drain current: 20A Power dissipation: 65W Case: FTO-220AG (SC91) Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 15nC Kind of package: bulk Kind of channel: enhanced |
на замовлення 47 шт: термін постачання 21-30 дні (днів) |
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P5F60HP2-5600 | Shindengen | MOSFET High Switching Speed High Voltage |
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P5F60HP2-5600 | SHINDENGEN |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 5A; Idm: 20A; 65W Type of transistor: N-MOSFET Technology: Hi-PotMOS2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 5A Pulsed drain current: 20A Power dissipation: 65W Case: FTO-220AG (SC91) Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 15nC Kind of package: bulk Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 47 шт: термін постачання 14-21 дні (днів) |
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| P60B10SB-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; FB (TO252AA) Case: FB (TO252AA) Kind of package: reel; tape Mounting: SMD Technology: EETMOS3 Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhanced |
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| P60B10SB-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; FB (TO252AA) Case: FB (TO252AA) Kind of package: reel; tape Mounting: SMD Technology: EETMOS3 Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhanced кількість в упаковці: 1 шт |
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P60B4EL-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS2; unipolar; 40V; 60A; Idm: 240A; 62.5W Type of transistor: N-MOSFET Technology: EETMOS2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 60A Pulsed drain current: 240A Power dissipation: 62.5W Case: FB (TO252AA) Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: SMD Gate charge: 57nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 643 шт: термін постачання 21-30 дні (днів) |
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P60B4EL-5071 | Shindengen |
MOSFET 40V, 60A EETMOS POWER MOSFET |
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P60B4EL-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS2; unipolar; 40V; 60A; Idm: 240A; 62.5W Type of transistor: N-MOSFET Technology: EETMOS2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 60A Pulsed drain current: 240A Power dissipation: 62.5W Case: FB (TO252AA) Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: SMD Gate charge: 57nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 643 шт: термін постачання 14-21 дні (днів) |
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| P60B4SN-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 40V; 60A; Idm: 180A; 62.5W Technology: EETMOS3 Mounting: SMD Case: FB (TO252AA) Kind of package: reel; tape Power dissipation: 62.5W Drain-source voltage: 40V Drain current: 60A On-state resistance: 4mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 59nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 180A |
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| P60B4SN-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 40V; 60A; Idm: 180A; 62.5W Technology: EETMOS3 Mounting: SMD Case: FB (TO252AA) Kind of package: reel; tape Power dissipation: 62.5W Drain-source voltage: 40V Drain current: 60A On-state resistance: 4mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 59nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 180A кількість в упаковці: 1 шт |
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P60B6EL-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS2; unipolar; 60V; 60A; Idm: 240A; 62.5W Type of transistor: N-MOSFET Technology: EETMOS2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 60A Pulsed drain current: 240A Power dissipation: 62.5W Case: FB (TO252AA) Gate-source voltage: ±20V On-state resistance: 7.7mΩ Mounting: SMD Gate charge: 55nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 2342 шт: термін постачання 21-30 дні (днів) |
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P60B6EL-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS2; unipolar; 60V; 60A; Idm: 240A; 62.5W Type of transistor: N-MOSFET Technology: EETMOS2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 60A Pulsed drain current: 240A Power dissipation: 62.5W Case: FB (TO252AA) Gate-source voltage: ±20V On-state resistance: 7.7mΩ Mounting: SMD Gate charge: 55nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 2342 шт: термін постачання 14-21 дні (днів) |
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| P60B6EN-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS2; unipolar; 60V; 60A; Idm: 240A; 62.5W Type of transistor: N-MOSFET Technology: EETMOS2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 60A Pulsed drain current: 240A Power dissipation: 62.5W Case: FB (TO252AA) Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: SMD Gate charge: 44nC Kind of package: reel; tape Kind of channel: enhanced |
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P60B6EN-5071 | Shindengen |
MOSFET 60V, 60A EETMOS POWER MOSFET |
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| P60B6EN-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS2; unipolar; 60V; 60A; Idm: 240A; 62.5W Type of transistor: N-MOSFET Technology: EETMOS2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 60A Pulsed drain current: 240A Power dissipation: 62.5W Case: FB (TO252AA) Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: SMD Gate charge: 44nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| P60B6SN-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 60A; Idm: 180A; 62.5W Type of transistor: N-MOSFET Technology: EETMOS3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 60A Pulsed drain current: 180A Power dissipation: 62.5W Case: FB (TO252AA) Gate-source voltage: ±20V On-state resistance: 6.7mΩ Mounting: SMD Gate charge: 55nC Kind of package: reel; tape Kind of channel: enhanced |
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| P60B6SN-5071 | Shindengen | MOSFET EETMOS series Power MOSFET SMD |
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| P60B6SN-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 60A; Idm: 180A; 62.5W Type of transistor: N-MOSFET Technology: EETMOS3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 60A Pulsed drain current: 180A Power dissipation: 62.5W Case: FB (TO252AA) Gate-source voltage: ±20V On-state resistance: 6.7mΩ Mounting: SMD Gate charge: 55nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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P64LF6QL-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS4; unipolar; 60V; 64A; Idm: 192A; 168W Mounting: SMD Case: LF (MO235B similar) Kind of package: reel; tape Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 5.7mΩ Pulsed drain current: 192A Power dissipation: 168W Gate charge: 77nC Polarisation: unipolar Technology: EETMOS4 Drain current: 64A Kind of channel: enhanced Drain-source voltage: 60V |
на замовлення 67 шт: термін постачання 21-30 дні (днів) |
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P64LF6QL-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS4; unipolar; 60V; 64A; Idm: 192A; 168W Mounting: SMD Case: LF (MO235B similar) Kind of package: reel; tape Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 5.7mΩ Pulsed drain current: 192A Power dissipation: 168W Gate charge: 77nC Polarisation: unipolar Technology: EETMOS4 Drain current: 64A Kind of channel: enhanced Drain-source voltage: 60V кількість в упаковці: 1 шт |
на замовлення 67 шт: термін постачання 14-21 дні (днів) |
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| P64LF6QLK-5071 | SHINDENGEN | P64LF6QLK-5071 SMD N channel transistors |
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| P64LF6QN-5071 | SHINDENGEN | P64LF6QN-5071 SMD N channel transistors |
на замовлення 89 шт: термін постачання 14-21 дні (днів) |
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| P64LF6QNK-5071 | SHINDENGEN | P64LF6QNK-5071 SMD N channel transistors |
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| P66F7R5SN-5600 | SHINDENGEN | P66F7R5SN-5600 THT N channel transistors |
на замовлення 85 шт: термін постачання 14-21 дні (днів) |
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| P66F7R5SNK-5600 | SHINDENGEN | P66F7R5SNK-5600 THT N channel transistors |
на замовлення 100 шт: термін постачання 14-21 дні (днів) |
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| P6B28HP2-5071 | SHINDENGEN | P6B28HP2-5071 SMD N channel transistors |
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| P6B40HP2-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 400V; 6A; Idm: 24A; 54W Type of transistor: N-MOSFET Technology: Hi-PotMOS2 Polarisation: unipolar Drain-source voltage: 400V Drain current: 6A Pulsed drain current: 24A Power dissipation: 54W Case: FB (TO252AA) Gate-source voltage: ±30V On-state resistance: 1.05Ω Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
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| P6B40HP2-5071 | Shindengen | MOSFET Hi-PotMOS series Power MOSFET SMD |
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| P6B40HP2-5071 | SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 400V; 6A; Idm: 24A; 54W Type of transistor: N-MOSFET Technology: Hi-PotMOS2 Polarisation: unipolar Drain-source voltage: 400V Drain current: 6A Pulsed drain current: 24A Power dissipation: 54W Case: FB (TO252AA) Gate-source voltage: ±30V On-state resistance: 1.05Ω Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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 |
P6B52HP2-5071 | Shindengen |
MOSFET Hi Voltage Low Noise |
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| P6B52HP2-5071 | SHINDENGEN | P6B52HP2-5071 SMD N channel transistors |
на замовлення 27 шт: термін постачання 14-21 дні (днів) |
|
| P50B6EA-5071 |
|
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS2; unipolar; FB (TO252AA)
Type of transistor: N-MOSFET
Technology: EETMOS2
Polarisation: unipolar
Case: FB (TO252AA)
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS2; unipolar; FB (TO252AA)
Type of transistor: N-MOSFET
Technology: EETMOS2
Polarisation: unipolar
Case: FB (TO252AA)
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| P50F10SN-5600 |
|
Виробник: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 50A; Idm: 200A; 51W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 51W
Case: FTO-220AG (SC91)
Gate-source voltage: ±20V
On-state resistance: 8.7mΩ
Mounting: THT
Gate charge: 114nC
Kind of package: bulk
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 50A; Idm: 200A; 51W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 51W
Case: FTO-220AG (SC91)
Gate-source voltage: ±20V
On-state resistance: 8.7mΩ
Mounting: THT
Gate charge: 114nC
Kind of package: bulk
Kind of channel: enhanced
на замовлення 261 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 80.73 грн |
| 14+ | 64.28 грн |
| 38+ | 61.3 грн |
| P50F10SN-5600 |
|
Виробник: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 50A; Idm: 200A; 51W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 51W
Case: FTO-220AG (SC91)
Gate-source voltage: ±20V
On-state resistance: 8.7mΩ
Mounting: THT
Gate charge: 114nC
Kind of package: bulk
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 50A; Idm: 200A; 51W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 51W
Case: FTO-220AG (SC91)
Gate-source voltage: ±20V
On-state resistance: 8.7mΩ
Mounting: THT
Gate charge: 114nC
Kind of package: bulk
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 261 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 115.92 грн |
| 5+ | 100.6 грн |
| 14+ | 77.14 грн |
| 38+ | 73.55 грн |
| P50LF10SL-5071 |
|
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 50A; Idm: 200A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 11.3mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 50A; Idm: 200A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 11.3mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| P50LF10SL-5071 |
|
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 50A; Idm: 200A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 11.3mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 50A; Idm: 200A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 11.3mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| P50LF10SLK-5071 |
|
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 50A; Idm: 200A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 11.3mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 50A; Idm: 200A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 11.3mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
| P50LF10SLK-5071 |
|
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 50A; Idm: 200A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 11.3mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 50A; Idm: 200A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 11.3mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
| P50LF10SN-5071 |
|
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 50A; Idm: 200A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 10.4mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 50A; Idm: 200A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 10.4mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| P50LF10SN-5071 |
|
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 50A; Idm: 200A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 10.4mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 50A; Idm: 200A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 10.4mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| P50LF10SNK-5071 |
|
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 50A; Idm: 200A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 10.4mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 50A; Idm: 200A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 10.4mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
товар відсутній
| P50LF10SNK-5071 |
|
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 50A; Idm: 200A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 10.4mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 50A; Idm: 200A; 217W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 217W
Case: LF (MO235B similar)
Gate-source voltage: ±20V
On-state resistance: 10.4mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
кількість в упаковці: 1 шт
товар відсутній
| P50LF4QTKD-5071 |
|
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 150A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 150A
Power dissipation: 62W
Case: LF (MO235B similar)
Gate-source voltage: ±10V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 150A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 150A
Power dissipation: 62W
Case: LF (MO235B similar)
Gate-source voltage: ±10V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| P50LF4QTKD-5071 |
|
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 150A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 150A
Power dissipation: 62W
Case: LF (MO235B similar)
Gate-source voltage: ±10V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 150A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 150A
Power dissipation: 62W
Case: LF (MO235B similar)
Gate-source voltage: ±10V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| P54B4SN-5071 |
|
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 40V; 54A; Idm: 162A; 44W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 54A
Pulsed drain current: 162A
Power dissipation: 44W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 40V; 54A; Idm: 162A; 44W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 54A
Pulsed drain current: 162A
Power dissipation: 44W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| P54B4SN-5071 |
|
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 40V; 54A; Idm: 162A; 44W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 54A
Pulsed drain current: 162A
Power dissipation: 44W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 40V; 54A; Idm: 162A; 44W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 54A
Pulsed drain current: 162A
Power dissipation: 44W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| P55F6EN-5600 |
Виробник: SHINDENGEN
P55F6EN-5600 THT N channel transistors
P55F6EN-5600 THT N channel transistors
на замовлення 63 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 109.16 грн |
| 16+ | 69.07 грн |
| 42+ | 65.48 грн |
| P58LF6GLK-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; LF (MO235B similar)
Type of transistor: N-MOSFET
Case: LF (MO235B similar)
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; LF (MO235B similar)
Type of transistor: N-MOSFET
Case: LF (MO235B similar)
Mounting: SMD
товар відсутній
| P58LF6GLK-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; LF (MO235B similar)
Type of transistor: N-MOSFET
Case: LF (MO235B similar)
Mounting: SMD
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; LF (MO235B similar)
Type of transistor: N-MOSFET
Case: LF (MO235B similar)
Mounting: SMD
кількість в упаковці: 1 шт
товар відсутній
| P58LF6GMK-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; LF (MO235B similar)
Type of transistor: N-MOSFET
Case: LF (MO235B similar)
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; LF (MO235B similar)
Type of transistor: N-MOSFET
Case: LF (MO235B similar)
Mounting: SMD
товар відсутній
| P58LF6GMK-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; LF (MO235B similar)
Type of transistor: N-MOSFET
Case: LF (MO235B similar)
Mounting: SMD
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; LF (MO235B similar)
Type of transistor: N-MOSFET
Case: LF (MO235B similar)
Mounting: SMD
кількість в упаковці: 1 шт
товар відсутній
| P5B50HP2F-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; 54W; FB (TO252AA)
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Power dissipation: 54W
Case: FB (TO252AA)
Gate-source voltage: ±10V
On-state resistance: 1.65mΩ
Mounting: SMD
Gate charge: 10.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; 54W; FB (TO252AA)
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Power dissipation: 54W
Case: FB (TO252AA)
Gate-source voltage: ±10V
On-state resistance: 1.65mΩ
Mounting: SMD
Gate charge: 10.5nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| P5B50HP2F-5071 |
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; 54W; FB (TO252AA)
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Power dissipation: 54W
Case: FB (TO252AA)
Gate-source voltage: ±10V
On-state resistance: 1.65mΩ
Mounting: SMD
Gate charge: 10.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; 54W; FB (TO252AA)
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Power dissipation: 54W
Case: FB (TO252AA)
Gate-source voltage: ±10V
On-state resistance: 1.65mΩ
Mounting: SMD
Gate charge: 10.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| P5F50HP2-5600 |
|
Виробник: Shindengen
MOSFET High Switching Speed High Voltage
MOSFET High Switching Speed High Voltage
на замовлення 82 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 154.04 грн |
| 10+ | 125.44 грн |
| 100+ | 86.83 грн |
| 200+ | 79.65 грн |
| 500+ | 72.48 грн |
| 1000+ | 62.29 грн |
| 2000+ | 59.2 грн |
| P5F50HP2-5600 |
Виробник: SHINDENGEN
P5F50HP2-5600 THT N channel transistors
P5F50HP2-5600 THT N channel transistors
на замовлення 100 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 69.55 грн |
| 28+ | 37.67 грн |
| 77+ | 35.88 грн |
| P5F50HP2F-5600 |
Виробник: SHINDENGEN
P5F50HP2F-5600 THT N channel transistors
P5F50HP2F-5600 THT N channel transistors
на замовлення 72 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 77.86 грн |
| 32+ | 33.19 грн |
| 87+ | 31.4 грн |
| P5F60HP2-5600 |
|
Виробник: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 5A; Idm: 20A; 65W
Type of transistor: N-MOSFET
Technology: Hi-PotMOS2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 65W
Case: FTO-220AG (SC91)
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 15nC
Kind of package: bulk
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 5A; Idm: 20A; 65W
Type of transistor: N-MOSFET
Technology: Hi-PotMOS2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 65W
Case: FTO-220AG (SC91)
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 15nC
Kind of package: bulk
Kind of channel: enhanced
на замовлення 47 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 53.13 грн |
| 9+ | 45 грн |
| 24+ | 37.38 грн |
| P5F60HP2-5600 |
|
Виробник: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 5A; Idm: 20A; 65W
Type of transistor: N-MOSFET
Technology: Hi-PotMOS2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 65W
Case: FTO-220AG (SC91)
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 15nC
Kind of package: bulk
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 5A; Idm: 20A; 65W
Type of transistor: N-MOSFET
Technology: Hi-PotMOS2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 65W
Case: FTO-220AG (SC91)
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 15nC
Kind of package: bulk
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 47 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 56.08 грн |
| 24+ | 44.85 грн |
| 65+ | 42.16 грн |
| 500+ | 41.44 грн |
| P60B10SB-5071 |
|
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; FB (TO252AA)
Case: FB (TO252AA)
Kind of package: reel; tape
Mounting: SMD
Technology: EETMOS3
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; FB (TO252AA)
Case: FB (TO252AA)
Kind of package: reel; tape
Mounting: SMD
Technology: EETMOS3
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
товар відсутній
| P60B10SB-5071 |
|
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; FB (TO252AA)
Case: FB (TO252AA)
Kind of package: reel; tape
Mounting: SMD
Technology: EETMOS3
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; FB (TO252AA)
Case: FB (TO252AA)
Kind of package: reel; tape
Mounting: SMD
Technology: EETMOS3
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| P60B4EL-5071 |
|
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS2; unipolar; 40V; 60A; Idm: 240A; 62.5W
Type of transistor: N-MOSFET
Technology: EETMOS2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 60A
Pulsed drain current: 240A
Power dissipation: 62.5W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS2; unipolar; 40V; 60A; Idm: 240A; 62.5W
Type of transistor: N-MOSFET
Technology: EETMOS2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 60A
Pulsed drain current: 240A
Power dissipation: 62.5W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 643 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 53.13 грн |
| 25+ | 35.88 грн |
| 68+ | 33.64 грн |
| P60B4EL-5071 |
|
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS2; unipolar; 40V; 60A; Idm: 240A; 62.5W
Type of transistor: N-MOSFET
Technology: EETMOS2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 60A
Pulsed drain current: 240A
Power dissipation: 62.5W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS2; unipolar; 40V; 60A; Idm: 240A; 62.5W
Type of transistor: N-MOSFET
Technology: EETMOS2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 60A
Pulsed drain current: 240A
Power dissipation: 62.5W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 643 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 63.76 грн |
| 25+ | 44.71 грн |
| 68+ | 40.36 грн |
| 3000+ | 39.38 грн |
| P60B4SN-5071 |
|
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 40V; 60A; Idm: 180A; 62.5W
Technology: EETMOS3
Mounting: SMD
Case: FB (TO252AA)
Kind of package: reel; tape
Power dissipation: 62.5W
Drain-source voltage: 40V
Drain current: 60A
On-state resistance: 4mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 59nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 180A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 40V; 60A; Idm: 180A; 62.5W
Technology: EETMOS3
Mounting: SMD
Case: FB (TO252AA)
Kind of package: reel; tape
Power dissipation: 62.5W
Drain-source voltage: 40V
Drain current: 60A
On-state resistance: 4mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 59nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 180A
товар відсутній
| P60B4SN-5071 |
|
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 40V; 60A; Idm: 180A; 62.5W
Technology: EETMOS3
Mounting: SMD
Case: FB (TO252AA)
Kind of package: reel; tape
Power dissipation: 62.5W
Drain-source voltage: 40V
Drain current: 60A
On-state resistance: 4mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 59nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 180A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 40V; 60A; Idm: 180A; 62.5W
Technology: EETMOS3
Mounting: SMD
Case: FB (TO252AA)
Kind of package: reel; tape
Power dissipation: 62.5W
Drain-source voltage: 40V
Drain current: 60A
On-state resistance: 4mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 59nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 180A
кількість в упаковці: 1 шт
товар відсутній
| P60B6EL-5071 |
|
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS2; unipolar; 60V; 60A; Idm: 240A; 62.5W
Type of transistor: N-MOSFET
Technology: EETMOS2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Pulsed drain current: 240A
Power dissipation: 62.5W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 7.7mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS2; unipolar; 60V; 60A; Idm: 240A; 62.5W
Type of transistor: N-MOSFET
Technology: EETMOS2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Pulsed drain current: 240A
Power dissipation: 62.5W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 7.7mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 2342 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 51.52 грн |
| 25+ | 42.98 грн |
| 26+ | 34.38 грн |
| 71+ | 32.14 грн |
| P60B6EL-5071 |
|
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS2; unipolar; 60V; 60A; Idm: 240A; 62.5W
Type of transistor: N-MOSFET
Technology: EETMOS2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Pulsed drain current: 240A
Power dissipation: 62.5W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 7.7mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS2; unipolar; 60V; 60A; Idm: 240A; 62.5W
Type of transistor: N-MOSFET
Technology: EETMOS2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Pulsed drain current: 240A
Power dissipation: 62.5W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 7.7mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2342 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 61.82 грн |
| 25+ | 53.56 грн |
| 26+ | 41.26 грн |
| 71+ | 38.57 грн |
| 3000+ | 38.21 грн |
| P60B6EN-5071 |
|
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS2; unipolar; 60V; 60A; Idm: 240A; 62.5W
Type of transistor: N-MOSFET
Technology: EETMOS2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Pulsed drain current: 240A
Power dissipation: 62.5W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS2; unipolar; 60V; 60A; Idm: 240A; 62.5W
Type of transistor: N-MOSFET
Technology: EETMOS2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Pulsed drain current: 240A
Power dissipation: 62.5W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| P60B6EN-5071 |
|
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS2; unipolar; 60V; 60A; Idm: 240A; 62.5W
Type of transistor: N-MOSFET
Technology: EETMOS2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Pulsed drain current: 240A
Power dissipation: 62.5W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS2; unipolar; 60V; 60A; Idm: 240A; 62.5W
Type of transistor: N-MOSFET
Technology: EETMOS2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Pulsed drain current: 240A
Power dissipation: 62.5W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| P60B6SN-5071 |
|
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 60A; Idm: 180A; 62.5W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Pulsed drain current: 180A
Power dissipation: 62.5W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 60A; Idm: 180A; 62.5W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Pulsed drain current: 180A
Power dissipation: 62.5W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| P60B6SN-5071 |
|
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 60A; Idm: 180A; 62.5W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Pulsed drain current: 180A
Power dissipation: 62.5W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 60A; Idm: 180A; 62.5W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Pulsed drain current: 180A
Power dissipation: 62.5W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| P64LF6QL-5071 |
|
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 60V; 64A; Idm: 192A; 168W
Mounting: SMD
Case: LF (MO235B similar)
Kind of package: reel; tape
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 5.7mΩ
Pulsed drain current: 192A
Power dissipation: 168W
Gate charge: 77nC
Polarisation: unipolar
Technology: EETMOS4
Drain current: 64A
Kind of channel: enhanced
Drain-source voltage: 60V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 60V; 64A; Idm: 192A; 168W
Mounting: SMD
Case: LF (MO235B similar)
Kind of package: reel; tape
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 5.7mΩ
Pulsed drain current: 192A
Power dissipation: 168W
Gate charge: 77nC
Polarisation: unipolar
Technology: EETMOS4
Drain current: 64A
Kind of channel: enhanced
Drain-source voltage: 60V
на замовлення 67 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 62.95 грн |
| 8+ | 48.06 грн |
| 24+ | 36.63 грн |
| 65+ | 34.38 грн |
| P64LF6QL-5071 |
|
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 60V; 64A; Idm: 192A; 168W
Mounting: SMD
Case: LF (MO235B similar)
Kind of package: reel; tape
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 5.7mΩ
Pulsed drain current: 192A
Power dissipation: 168W
Gate charge: 77nC
Polarisation: unipolar
Technology: EETMOS4
Drain current: 64A
Kind of channel: enhanced
Drain-source voltage: 60V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 60V; 64A; Idm: 192A; 168W
Mounting: SMD
Case: LF (MO235B similar)
Kind of package: reel; tape
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 5.7mΩ
Pulsed drain current: 192A
Power dissipation: 168W
Gate charge: 77nC
Polarisation: unipolar
Technology: EETMOS4
Drain current: 64A
Kind of channel: enhanced
Drain-source voltage: 60V
кількість в упаковці: 1 шт
на замовлення 67 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 75.54 грн |
| 5+ | 59.9 грн |
| 24+ | 43.95 грн |
| 65+ | 41.26 грн |
| P64LF6QN-5071 |
Виробник: SHINDENGEN
P64LF6QN-5071 SMD N channel transistors
P64LF6QN-5071 SMD N channel transistors
на замовлення 89 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 73.42 грн |
| 23+ | 46.64 грн |
| 62+ | 43.95 грн |
| P66F7R5SN-5600 |
Виробник: SHINDENGEN
P66F7R5SN-5600 THT N channel transistors
P66F7R5SN-5600 THT N channel transistors
на замовлення 85 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 120.75 грн |
| 14+ | 77.14 грн |
| 38+ | 72.66 грн |
| P66F7R5SNK-5600 |
Виробник: SHINDENGEN
P66F7R5SNK-5600 THT N channel transistors
P66F7R5SNK-5600 THT N channel transistors
на замовлення 100 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 137.17 грн |
| 11+ | 97.77 грн |
| 30+ | 92.39 грн |
| 500+ | 92.22 грн |
| P6B40HP2-5071 |
|
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 400V; 6A; Idm: 24A; 54W
Type of transistor: N-MOSFET
Technology: Hi-PotMOS2
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 54W
Case: FB (TO252AA)
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 400V; 6A; Idm: 24A; 54W
Type of transistor: N-MOSFET
Technology: Hi-PotMOS2
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 54W
Case: FB (TO252AA)
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| P6B40HP2-5071 |
|
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 400V; 6A; Idm: 24A; 54W
Type of transistor: N-MOSFET
Technology: Hi-PotMOS2
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 54W
Case: FB (TO252AA)
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 400V; 6A; Idm: 24A; 54W
Type of transistor: N-MOSFET
Technology: Hi-PotMOS2
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 54W
Case: FB (TO252AA)
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| P6B52HP2-5071 |
Виробник: SHINDENGEN
P6B52HP2-5071 SMD N channel transistors
P6B52HP2-5071 SMD N channel transistors
на замовлення 27 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 67.52 грн |
| 31+ | 34.98 грн |
| 83+ | 33.19 грн |