Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (100330) > Сторінка 970 з 1673
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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SFR10EZPJ474 | Rohm Semiconductor |
Description: RES 470K OHM 5% 1/8W 0805 Packaging: Cut Tape (CT) Power (Watts): 0.125W, 1/8W Tolerance: ±5% Features: Anti-Sulfur, Automotive AEC-Q200 Package / Case: 0805 (2012 Metric) Temperature Coefficient: ±200ppm/°C Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0805 Height - Seated (Max): 0.026" (0.65mm) Part Status: Active Resistance: 470 kOhms |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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RB161SS-207HFT2R | Rohm Semiconductor |
Description: DIODE SCHOTTKY 20V 1A KMD2 Packaging: Tape & Reel (TR) Package / Case: 0603 (1608 Metric) Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: KMD2 Operating Temperature - Junction: 125°C Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
товар відсутній |
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BU7233SF-E2 | Rohm Semiconductor |
Description: IC COMPARATOR 2 CMOS 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: CMOS, Open-Drain Mounting Type: Surface Mount Number of Elements: 2 Type: CMOS Operating Temperature: -40°C ~ 105°C Voltage - Supply, Single/Dual (±): 1.8V ~ 5.5V, ±0.9V ~ 2.75V Supplier Device Package: 8-SOP Propagation Delay (Max): 1.8µs Current - Quiescent (Max): 25µA Voltage - Input Offset (Max): 11mV @ 3V Current - Input Bias (Max): 1pA @ 3V Current - Output (Typ): 6mA @ 3V CMRR, PSRR (Typ): 80dB CMRR, 80dB PSRR Part Status: Active |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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BU7233SF-E2 | Rohm Semiconductor |
Description: IC COMPARATOR 2 CMOS 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: CMOS, Open-Drain Mounting Type: Surface Mount Number of Elements: 2 Type: CMOS Operating Temperature: -40°C ~ 105°C Voltage - Supply, Single/Dual (±): 1.8V ~ 5.5V, ±0.9V ~ 2.75V Supplier Device Package: 8-SOP Propagation Delay (Max): 1.8µs Current - Quiescent (Max): 25µA Voltage - Input Offset (Max): 11mV @ 3V Current - Input Bias (Max): 1pA @ 3V Current - Output (Typ): 6mA @ 3V CMRR, PSRR (Typ): 80dB CMRR, 80dB PSRR Part Status: Active |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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DTC114TE3HZGTL | Rohm Semiconductor |
Description: NPN DIGITAL TRANSISTOR (AEC-Q101 Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Supplier Device Package: EMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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DTC114TE3HZGTL | Rohm Semiconductor |
Description: NPN DIGITAL TRANSISTOR (AEC-Q101 Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Supplier Device Package: EMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RGTH80TS65DGC13 | Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 70A TO247G Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 236 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Supplier Device Package: TO-247G IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 34ns/120ns Test Condition: 400V, 40A, 10Ohm, 15V Gate Charge: 79 nC Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 160 A Power - Max: 234 W |
на замовлення 593 шт: термін постачання 21-31 дні (днів) |
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RGWS80TS65DGC13 | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 71A TO247G Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 88 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A Supplier Device Package: TO-247G IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 40ns/114ns Switching Energy: 700µJ (on), 660µJ (off) Test Condition: 400V, 40A, 10Ohm, 15V Gate Charge: 83 nC Current - Collector (Ic) (Max): 71 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 202 W |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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RGS80TS65DHRC11 | Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 73A TO247N Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 103 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 37ns/112ns Switching Energy: 1.05mJ (on), 1.03mJ (off) Test Condition: 400V, 40A, 10Ohm, 15V Gate Charge: 48 nC Current - Collector (Ic) (Max): 73 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 272 W |
на замовлення 709 шт: термін постачання 21-31 дні (днів) |
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RGSX5TS65DHRC11 | Rohm Semiconductor |
Description: IGBT TRENCH FLD 650V 114A TO247N Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 114 ns Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 43ns/113ns Switching Energy: 3.32mJ (on), 1.9mJ (off) Test Condition: 400V, 75A, 10Ohm, 15V Gate Charge: 79 nC Current - Collector (Ic) (Max): 114 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 225 A Power - Max: 404 W |
на замовлення 450 шт: термін постачання 21-31 дні (днів) |
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RGWS00TS65DGC13 | Rohm Semiconductor | Description: IGBT TRNCH FIELD 650V 88A TO247G |
товар відсутній |
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RGTH00TS65DGC13 | Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 85A TO247G Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 54 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Supplier Device Package: TO-247G IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 39ns/143ns Test Condition: 400V, 50A, 10Ohm, 15V Gate Charge: 94 nC Current - Collector (Ic) (Max): 85 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 200 A Power - Max: 277 W |
на замовлення 591 шт: термін постачання 21-31 дні (днів) |
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RGWX5TS65DGC11 | Rohm Semiconductor |
Description: IGBT TRENCH FLD 650V 132A TO247N Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 101 ns Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 64ns/229ns Switching Energy: 2.39mJ (on), 1.68mJ (off) Test Condition: 400V, 75A, 10Ohm, 15V Gate Charge: 213 nC Current - Collector (Ic) (Max): 132 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A Power - Max: 348 W |
на замовлення 400 шт: термін постачання 21-31 дні (днів) |
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RGT80TS65DGC13 | Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 70A TO247G Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 236 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Supplier Device Package: TO-247G IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 34ns/119ns Test Condition: 400V, 40A, 10Ohm, 15V Gate Charge: 79 nC Part Status: Active Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 234 W |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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RGT00TS65DGC13 | Rohm Semiconductor | Description: IGBT TRNCH FIELD 650V 85A TO247G |
товар відсутній |
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RGTH50TS65DGC13 | Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 50A TO247G Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 58 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A Supplier Device Package: TO-247G IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 27ns/94ns Test Condition: 400V, 25A, 10Ohm, 15V Gate Charge: 49 nC Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 100 A Power - Max: 174 W |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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RGT40TS65DGC13 | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 40A TO247G Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 58 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A Supplier Device Package: TO-247G IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 22ns/75ns Test Condition: 400V, 20A, 10Ohm, 15V Gate Charge: 40 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 60 A Power - Max: 144 W |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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RGWX5TS65DHRC11 | Rohm Semiconductor |
Description: IGBT TRENCH FLD 650V 132A TO247N Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 92 ns Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 62ns/237ns Test Condition: 400V, 37.5A, 10Ohm, 15V Gate Charge: 213 nC Current - Collector (Ic) (Max): 132 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A Power - Max: 348 W |
на замовлення 332 шт: термін постачання 21-31 дні (днів) |
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RGW00TS65DHRC11 | Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 96A TO247N Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 90 ns Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 48ns/186ns Test Condition: 400V, 25A, 10Ohm, 15V Gate Charge: 141 nC Part Status: Active Current - Collector (Ic) (Max): 96 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 200 A Power - Max: 254 W |
на замовлення 425 шт: термін постачання 21-31 дні (днів) |
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RGW80TS65DHRC11 | Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 80A TO247N Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 92 ns Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 42ns/148ns Test Condition: 400V, 20A, 10Ohm, 15V Gate Charge: 110 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 160 A Power - Max: 214 W |
на замовлення 446 шт: термін постачання 21-31 дні (днів) |
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RGT50TS65DGC11 | Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 48A TO247N Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 58 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 27ns/88ns Test Condition: 400V, 25A, 10Ohm, 15V Gate Charge: 49 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 48 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 75 A Power - Max: 174 W |
товар відсутній |
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SFR18EZPF1503 | Rohm Semiconductor |
Description: RES 150K OHM 1% 1/4W 1206 Packaging: Tape & Reel (TR) Power (Watts): 0.25W, 1/4W Tolerance: ±1% Features: Anti-Sulfur, Automotive AEC-Q200 Package / Case: 1206 (3216 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 1206 Height - Seated (Max): 0.026" (0.65mm) Part Status: Active Resistance: 150 kOhms |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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SFR18EZPF1503 | Rohm Semiconductor |
Description: RES 150K OHM 1% 1/4W 1206 Packaging: Cut Tape (CT) Power (Watts): 0.25W, 1/4W Tolerance: ±1% Features: Anti-Sulfur, Automotive AEC-Q200 Package / Case: 1206 (3216 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 1206 Height - Seated (Max): 0.026" (0.65mm) Part Status: Active Resistance: 150 kOhms |
на замовлення 9950 шт: термін постачання 21-31 дні (днів) |
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BD7281YG-CTR | Rohm Semiconductor |
Description: NANO CAP, LOW NOISE & INPUT/OUTP Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Output Type: Push-Pull, Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: CMOS Operating Temperature: -40°C ~ 125°C Current - Supply: 1.7mA Slew Rate: 10V/µs Gain Bandwidth Product: 7 MHz Current - Input Bias: 0.5 pA Voltage - Input Offset: 10 µV Supplier Device Package: 5-SSOP Part Status: Active Number of Circuits: 1 Current - Output / Channel: 50 mA Voltage - Supply Span (Min): 2.5 V Voltage - Supply Span (Max): 5.5 V Grade: Automotive Qualification: AEC-Q100 |
товар відсутній |
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BD7281YG-CTR | Rohm Semiconductor |
Description: NANO CAP, LOW NOISE & INPUT/OUTP Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: Push-Pull, Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: CMOS Operating Temperature: -40°C ~ 125°C Current - Supply: 1.7mA Slew Rate: 10V/µs Gain Bandwidth Product: 7 MHz Current - Input Bias: 0.5 pA Voltage - Input Offset: 10 µV Supplier Device Package: 5-SSOP Part Status: Active Number of Circuits: 1 Current - Output / Channel: 50 mA Voltage - Supply Span (Min): 2.5 V Voltage - Supply Span (Max): 5.5 V Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2368 шт: термін постачання 21-31 дні (днів) |
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RS6R035BHTB1 | Rohm Semiconductor |
Description: NCH 150V 35A, HSOP8, POWER MOSFE Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 35A, 10V Power Dissipation (Max): 3W (Ta), 73W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: 8-HSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 75 V |
товар відсутній |
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RS6R035BHTB1 | Rohm Semiconductor |
Description: NCH 150V 35A, HSOP8, POWER MOSFE Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 35A, 10V Power Dissipation (Max): 3W (Ta), 73W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: 8-HSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 75 V |
на замовлення 2484 шт: термін постачання 21-31 дні (днів) |
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LTR100JZPFLR270 | Rohm Semiconductor |
Description: RES SMD 0.27 OHM 1% 2W 2512 WIDE Packaging: Tape & Reel (TR) Power (Watts): 2W Tolerance: ±1% Features: Automotive AEC-Q200, Current Sense Package / Case: Wide 2512 (6432 Metric), 1225 Temperature Coefficient: 0/ +100ppm/°C Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 1225 Height - Seated (Max): 0.028" (0.70mm) Part Status: Active Resistance: 270 MOhms |
товар відсутній |
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LTR100JZPFLR270 | Rohm Semiconductor |
Description: RES SMD 0.27 OHM 1% 2W 2512 WIDE Packaging: Cut Tape (CT) Power (Watts): 2W Tolerance: ±1% Features: Automotive AEC-Q200, Current Sense Package / Case: Wide 2512 (6432 Metric), 1225 Temperature Coefficient: 0/ +100ppm/°C Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 1225 Height - Seated (Max): 0.028" (0.70mm) Part Status: Active Resistance: 270 MOhms |
на замовлення 3998 шт: термін постачання 21-31 дні (днів) |
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LTR50UZPFLR270 | Rohm Semiconductor |
Description: RES SMD 0.27 OHM 1% 2W 2010 WIDE Packaging: Tape & Reel (TR) Power (Watts): 2W Tolerance: ±1% Features: Automotive AEC-Q200, Current Sense Package / Case: Wide 2010 (5025 Metric), 1020 Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.098" L x 0.197" W (2.50mm x 5.00mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 1020 Height - Seated (Max): 0.029" (0.73mm) Part Status: Active Resistance: 270 MOhms |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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LTR50UZPFLR270 | Rohm Semiconductor |
Description: RES SMD 0.27 OHM 1% 2W 2010 WIDE Packaging: Cut Tape (CT) Power (Watts): 2W Tolerance: ±1% Features: Automotive AEC-Q200, Current Sense Package / Case: Wide 2010 (5025 Metric), 1020 Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.098" L x 0.197" W (2.50mm x 5.00mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 1020 Height - Seated (Max): 0.029" (0.73mm) Part Status: Active Resistance: 270 MOhms |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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BD82A26MUF-ME2 | Rohm Semiconductor |
Description: NANO CAP, WHITE LED DRIVER FOR A Packaging: Tape & Reel (TR) Package / Case: 32-VFQFN Exposed Pad Voltage - Output: 50V Mounting Type: Surface Mount, Wettable Flank Number of Outputs: 6 Frequency: 270kHz ~ 2.42MHz Type: DC DC Regulator Operating Temperature: -40°C ~ 125°C (TA) Applications: Backlight Current - Output / Channel: 150mA Internal Switch(s): No Topology: Step-Up (Boost) Supplier Device Package: VQFN32FBV050 Dimming: Analog, PWM Voltage - Supply (Min): 3V Voltage - Supply (Max): 48V Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
товар відсутній |
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BD82A26MUF-ME2 | Rohm Semiconductor |
Description: NANO CAP, WHITE LED DRIVER FOR A Packaging: Cut Tape (CT) Package / Case: 32-VFQFN Exposed Pad Voltage - Output: 50V Mounting Type: Surface Mount, Wettable Flank Number of Outputs: 6 Frequency: 270kHz ~ 2.42MHz Type: DC DC Regulator Operating Temperature: -40°C ~ 125°C (TA) Applications: Backlight Current - Output / Channel: 150mA Internal Switch(s): No Topology: Step-Up (Boost) Supplier Device Package: VQFN32FBV050 Dimming: Analog, PWM Voltage - Supply (Min): 3V Voltage - Supply (Max): 48V Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2350 шт: термін постачання 21-31 дні (днів) |
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RCJ160N20TL | Rohm Semiconductor |
Description: MOSFET N-CH 200V 16A LPTS Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 8A, 10V Power Dissipation (Max): 1.56W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 5.25V @ 1mA Supplier Device Package: LPTS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 25 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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RCJ160N20TL | Rohm Semiconductor |
Description: MOSFET N-CH 200V 16A LPTS Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 8A, 10V Power Dissipation (Max): 1.56W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 5.25V @ 1mA Supplier Device Package: LPTS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 25 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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RR264MM-400TFTR | Rohm Semiconductor |
Description: DIODE GEN PURP 400V 700MA PMDU Packaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 700mA Supplier Device Package: PMDU Operating Temperature - Junction: 150°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
на замовлення 31819 шт: термін постачання 21-31 дні (днів) |
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BD69740FV-GE2 | Rohm Semiconductor | Description: IC MOTOR DRIVER 16SSOPB |
товар відсутній |
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BD69740FV-GE2 | Rohm Semiconductor | Description: IC MOTOR DRIVER 16SSOPB |
товар відсутній |
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BD6971FS-E2 | Rohm Semiconductor | Description: IC MOTOR DRIVER 0V-7V 16SSOPA |
товар відсутній |
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BD6973FV-E2 | Rohm Semiconductor |
Description: IC MOTOR DRIVER 4.3V-17V 16SSOPB Packaging: Tape & Reel (TR) Package / Case: 16-LSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Function: Controller - Speed Current - Output: 12mA Interface: PWM Operating Temperature: -40°C ~ 100°C Output Configuration: Pre-Driver - Half Bridge (2) Voltage - Supply: 4.3V ~ 17V Applications: Fan Controller Technology: NMOS, PMOS Supplier Device Package: 16-SSOP-B Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushless DC (BLDC) |
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BD6974FV-E2 | Rohm Semiconductor | Description: IC MOTOR DRIVER 4.3V-17V 16SSOPB |
товар відсутній |
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BD63800MUF-EVK-002 | Rohm Semiconductor | Description: EVAL BOARD FOR BD63800 |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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SDR03EZPF6200 | Rohm Semiconductor |
Description: RES 620 OHM 1% 0.3W 0603 Power (Watts): 0.3W Tolerance: ±1% Features: Automotive AEC-Q200, Pulse Withstanding Packaging: Tape & Reel (TR) Package / Case: 0603 (1608 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0603 Height - Seated (Max): 0.022" (0.55mm) Part Status: Active Resistance: 620 Ohms |
товар відсутній |
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SDR03EZPF6200 | Rohm Semiconductor |
Description: RES 620 OHM 1% 0.3W 0603 Power (Watts): 0.3W Tolerance: ±1% Features: Automotive AEC-Q200, Pulse Withstanding Packaging: Cut Tape (CT) Package / Case: 0603 (1608 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0603 Height - Seated (Max): 0.022" (0.55mm) Part Status: Active Resistance: 620 Ohms |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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VS54VLNVWMTR | Rohm Semiconductor |
Description: 54V 200W, COMPACT AND HIGHLY REL Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 2.2A Voltage - Reverse Standoff (Typ): 54V (Max) Supplier Device Package: PMDE Unidirectional Channels: 1 Voltage - Breakdown (Min): 58V Voltage - Clamping (Max) @ Ipp: 87.1V Power - Peak Pulse: 200W Power Line Protection: No |
товар відсутній |
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VS54VLNVWMTR | Rohm Semiconductor |
Description: 54V 200W, COMPACT AND HIGHLY REL Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 2.2A Voltage - Reverse Standoff (Typ): 54V (Max) Supplier Device Package: PMDE Unidirectional Channels: 1 Voltage - Breakdown (Min): 58V Voltage - Clamping (Max) @ Ipp: 87.1V Power - Peak Pulse: 200W Power Line Protection: No |
на замовлення 1628 шт: термін постачання 21-31 дні (днів) |
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VS54VLNVWMTFTR | Rohm Semiconductor |
Description: 54V 200W, COMPACT AND HIGHLY REL Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 2.2A Voltage - Reverse Standoff (Typ): 54V (Max) Supplier Device Package: PMDE Unidirectional Channels: 1 Voltage - Breakdown (Min): 58V Voltage - Clamping (Max) @ Ipp: 87.1V Power - Peak Pulse: 200W Power Line Protection: No |
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VS54VLNVWMTFTR | Rohm Semiconductor |
Description: 54V 200W, COMPACT AND HIGHLY REL Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 2.2A Voltage - Reverse Standoff (Typ): 54V (Max) Supplier Device Package: PMDE Unidirectional Channels: 1 Voltage - Breakdown (Min): 58V Voltage - Clamping (Max) @ Ipp: 87.1V Power - Peak Pulse: 200W Power Line Protection: No |
на замовлення 2865 шт: термін постачання 21-31 дні (днів) |
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SFR10EZPF68R0 | Rohm Semiconductor |
Description: RES 68 OHM 1% 1/8W 0805 Packaging: Tape & Reel (TR) Power (Watts): 0.125W, 1/8W Tolerance: ±1% Features: Anti-Sulfur, Automotive AEC-Q200 Package / Case: 0805 (2012 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0805 Height - Seated (Max): 0.026" (0.65mm) Part Status: Active Resistance: 68 Ohms |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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SFR10EZPF68R0 | Rohm Semiconductor |
Description: RES 68 OHM 1% 1/8W 0805 Packaging: Cut Tape (CT) Power (Watts): 0.125W, 1/8W Tolerance: ±1% Features: Anti-Sulfur, Automotive AEC-Q200 Package / Case: 0805 (2012 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0805 Height - Seated (Max): 0.026" (0.65mm) Part Status: Active Resistance: 68 Ohms |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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SDR03EZPD68R0 | Rohm Semiconductor | Description: HIGH ANTI-SURGE THICK FILM CHIP |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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SDR03EZPD68R0 | Rohm Semiconductor | Description: HIGH ANTI-SURGE THICK FILM CHIP |
на замовлення 9915 шт: термін постачання 21-31 дні (днів) |
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SDR10EZPF68R0 | Rohm Semiconductor |
Description: RES 68 OHM 1% 1/2W 0805 Packaging: Tape & Reel (TR) Power (Watts): 0.5W, 1/2W Tolerance: ±1% Features: Automotive AEC-Q200, Pulse Withstanding Package / Case: 0805 (2012 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0805 Height - Seated (Max): 0.026" (0.65mm) Part Status: Active Resistance: 68 Ohms |
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SDR10EZPF68R0 | Rohm Semiconductor |
Description: RES 68 OHM 1% 1/2W 0805 Packaging: Cut Tape (CT) Power (Watts): 0.5W, 1/2W Tolerance: ±1% Features: Automotive AEC-Q200, Pulse Withstanding Package / Case: 0805 (2012 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0805 Height - Seated (Max): 0.026" (0.65mm) Part Status: Active Resistance: 68 Ohms |
на замовлення 4800 шт: термін постачання 21-31 дні (днів) |
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BH1900NUX-EVK-001 | Rohm Semiconductor | Description: TEMPERATURE SENSOR EVALUATION BO |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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DSK9J01Q0L | Rohm Semiconductor | Description: TRANS JFET N-CH 30MA SMD |
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RBR5L60ADDTE25 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 60V 5A PMDS Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: PMDS Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A Current - Reverse Leakage @ Vr: 250 µA @ 60 V |
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RBR5L60ADDTE25 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 60V 5A PMDS Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: PMDS Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A Current - Reverse Leakage @ Vr: 250 µA @ 60 V |
на замовлення 284 шт: термін постачання 21-31 дні (днів) |
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RBR20NS40ATL | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTT 40V 10A LPDS Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: LPDS Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 620 mV @ 10 A Current - Reverse Leakage @ Vr: 240 µA @ 40 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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RBR20NS40ATL | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTT 40V 10A LPDS Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: LPDS Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 620 mV @ 10 A Current - Reverse Leakage @ Vr: 240 µA @ 40 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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SFR10EZPJ474 |
Виробник: Rohm Semiconductor
Description: RES 470K OHM 5% 1/8W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.125W, 1/8W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 470 kOhms
Description: RES 470K OHM 5% 1/8W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.125W, 1/8W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 470 kOhms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
31+ | 10.12 грн |
61+ | 4.95 грн |
91+ | 3.3 грн |
107+ | 2.64 грн |
500+ | 1.9 грн |
1000+ | 1.67 грн |
RB161SS-207HFT2R |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 20V 1A KMD2
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: KMD2
Operating Temperature - Junction: 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Description: DIODE SCHOTTKY 20V 1A KMD2
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: KMD2
Operating Temperature - Junction: 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
товар відсутній
BU7233SF-E2 |
Виробник: Rohm Semiconductor
Description: IC COMPARATOR 2 CMOS 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: CMOS, Open-Drain
Mounting Type: Surface Mount
Number of Elements: 2
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 5.5V, ±0.9V ~ 2.75V
Supplier Device Package: 8-SOP
Propagation Delay (Max): 1.8µs
Current - Quiescent (Max): 25µA
Voltage - Input Offset (Max): 11mV @ 3V
Current - Input Bias (Max): 1pA @ 3V
Current - Output (Typ): 6mA @ 3V
CMRR, PSRR (Typ): 80dB CMRR, 80dB PSRR
Part Status: Active
Description: IC COMPARATOR 2 CMOS 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: CMOS, Open-Drain
Mounting Type: Surface Mount
Number of Elements: 2
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 5.5V, ±0.9V ~ 2.75V
Supplier Device Package: 8-SOP
Propagation Delay (Max): 1.8µs
Current - Quiescent (Max): 25µA
Voltage - Input Offset (Max): 11mV @ 3V
Current - Input Bias (Max): 1pA @ 3V
Current - Output (Typ): 6mA @ 3V
CMRR, PSRR (Typ): 80dB CMRR, 80dB PSRR
Part Status: Active
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 37.49 грн |
5000+ | 34.3 грн |
BU7233SF-E2 |
Виробник: Rohm Semiconductor
Description: IC COMPARATOR 2 CMOS 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: CMOS, Open-Drain
Mounting Type: Surface Mount
Number of Elements: 2
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 5.5V, ±0.9V ~ 2.75V
Supplier Device Package: 8-SOP
Propagation Delay (Max): 1.8µs
Current - Quiescent (Max): 25µA
Voltage - Input Offset (Max): 11mV @ 3V
Current - Input Bias (Max): 1pA @ 3V
Current - Output (Typ): 6mA @ 3V
CMRR, PSRR (Typ): 80dB CMRR, 80dB PSRR
Part Status: Active
Description: IC COMPARATOR 2 CMOS 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: CMOS, Open-Drain
Mounting Type: Surface Mount
Number of Elements: 2
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 5.5V, ±0.9V ~ 2.75V
Supplier Device Package: 8-SOP
Propagation Delay (Max): 1.8µs
Current - Quiescent (Max): 25µA
Voltage - Input Offset (Max): 11mV @ 3V
Current - Input Bias (Max): 1pA @ 3V
Current - Output (Typ): 6mA @ 3V
CMRR, PSRR (Typ): 80dB CMRR, 80dB PSRR
Part Status: Active
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 88.71 грн |
10+ | 76.13 грн |
25+ | 72.2 грн |
100+ | 55.66 грн |
250+ | 52.03 грн |
500+ | 45.98 грн |
1000+ | 35.71 грн |
DTC114TE3HZGTL |
Виробник: Rohm Semiconductor
Description: NPN DIGITAL TRANSISTOR (AEC-Q101
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Description: NPN DIGITAL TRANSISTOR (AEC-Q101
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 6.1 грн |
DTC114TE3HZGTL |
Виробник: Rohm Semiconductor
Description: NPN DIGITAL TRANSISTOR (AEC-Q101
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Description: NPN DIGITAL TRANSISTOR (AEC-Q101
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 31.9 грн |
14+ | 22.85 грн |
100+ | 12.93 грн |
500+ | 8.04 грн |
1000+ | 6.16 грн |
RGTH80TS65DGC13 |
Виробник: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 70A TO247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 236 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247G
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 34ns/120ns
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 79 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 234 W
Description: IGBT TRNCH FIELD 650V 70A TO247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 236 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247G
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 34ns/120ns
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 79 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 234 W
на замовлення 593 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 495.67 грн |
10+ | 322.58 грн |
100+ | 234.73 грн |
RGWS80TS65DGC13 |
Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 71A TO247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 88 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247G
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 40ns/114ns
Switching Energy: 700µJ (on), 660µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 83 nC
Current - Collector (Ic) (Max): 71 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 202 W
Description: IGBT TRENCH FS 650V 71A TO247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 88 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247G
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 40ns/114ns
Switching Energy: 700µJ (on), 660µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 83 nC
Current - Collector (Ic) (Max): 71 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 202 W
на замовлення 600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 348.6 грн |
30+ | 195.17 грн |
RGS80TS65DHRC11 |
Виробник: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 73A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 103 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/112ns
Switching Energy: 1.05mJ (on), 1.03mJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 48 nC
Current - Collector (Ic) (Max): 73 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 272 W
Description: IGBT TRNCH FIELD 650V 73A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 103 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/112ns
Switching Energy: 1.05mJ (on), 1.03mJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 48 nC
Current - Collector (Ic) (Max): 73 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 272 W
на замовлення 709 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 634.95 грн |
30+ | 358.79 грн |
120+ | 303.11 грн |
510+ | 254.14 грн |
RGSX5TS65DHRC11 |
Виробник: Rohm Semiconductor
Description: IGBT TRENCH FLD 650V 114A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 114 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 43ns/113ns
Switching Energy: 3.32mJ (on), 1.9mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 79 nC
Current - Collector (Ic) (Max): 114 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 404 W
Description: IGBT TRENCH FLD 650V 114A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 114 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 43ns/113ns
Switching Energy: 3.32mJ (on), 1.9mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 79 nC
Current - Collector (Ic) (Max): 114 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 404 W
на замовлення 450 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 525.23 грн |
30+ | 403.68 грн |
120+ | 374.07 грн |
RGWS00TS65DGC13 |
Виробник: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 88A TO247G
Description: IGBT TRNCH FIELD 650V 88A TO247G
товар відсутній
RGTH00TS65DGC13 |
Виробник: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 85A TO247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 54 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: TO-247G
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 39ns/143ns
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 94 nC
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 277 W
Description: IGBT TRNCH FIELD 650V 85A TO247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 54 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: TO-247G
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 39ns/143ns
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 94 nC
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 277 W
на замовлення 591 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 543.13 грн |
10+ | 354.95 грн |
100+ | 259.71 грн |
RGWX5TS65DGC11 |
Виробник: Rohm Semiconductor
Description: IGBT TRENCH FLD 650V 132A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 101 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 64ns/229ns
Switching Energy: 2.39mJ (on), 1.68mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 213 nC
Current - Collector (Ic) (Max): 132 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 348 W
Description: IGBT TRENCH FLD 650V 132A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 101 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 64ns/229ns
Switching Energy: 2.39mJ (on), 1.68mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 213 nC
Current - Collector (Ic) (Max): 132 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 348 W
на замовлення 400 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 452.09 грн |
30+ | 275.09 грн |
RGT80TS65DGC13 |
Виробник: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 70A TO247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 236 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247G
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 34ns/119ns
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 79 nC
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 234 W
Description: IGBT TRNCH FIELD 650V 70A TO247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 236 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247G
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 34ns/119ns
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 79 nC
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 234 W
на замовлення 600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 575.81 грн |
10+ | 385.22 грн |
100+ | 378.41 грн |
RGT00TS65DGC13 |
Виробник: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 85A TO247G
Description: IGBT TRNCH FIELD 650V 85A TO247G
товар відсутній
RGTH50TS65DGC13 |
Виробник: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 50A TO247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: TO-247G
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/94ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 49 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 174 W
Description: IGBT TRNCH FIELD 650V 50A TO247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: TO-247G
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/94ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 49 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 174 W
на замовлення 600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 314.36 грн |
10+ | 203.51 грн |
100+ | 170.11 грн |
RGT40TS65DGC13 |
Виробник: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 40A TO247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-247G
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/75ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 40 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 144 W
Description: IGBT TRENCH FS 650V 40A TO247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-247G
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/75ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 40 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 144 W
на замовлення 600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 495.67 грн |
30+ | 310.76 грн |
RGWX5TS65DHRC11 |
Виробник: Rohm Semiconductor
Description: IGBT TRENCH FLD 650V 132A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 92 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 62ns/237ns
Test Condition: 400V, 37.5A, 10Ohm, 15V
Gate Charge: 213 nC
Current - Collector (Ic) (Max): 132 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 348 W
Description: IGBT TRENCH FLD 650V 132A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 92 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 62ns/237ns
Test Condition: 400V, 37.5A, 10Ohm, 15V
Gate Charge: 213 nC
Current - Collector (Ic) (Max): 132 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 348 W
на замовлення 332 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 444.31 грн |
10+ | 366.71 грн |
RGW00TS65DHRC11 |
Виробник: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 96A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 48ns/186ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 141 nC
Part Status: Active
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 254 W
Description: IGBT TRNCH FIELD 650V 96A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 48ns/186ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 141 nC
Part Status: Active
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 254 W
на замовлення 425 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 452.09 грн |
10+ | 298.37 грн |
RGW80TS65DHRC11 |
Виробник: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 80A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 92 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 42ns/148ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 214 W
Description: IGBT TRNCH FIELD 650V 80A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 92 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 42ns/148ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 214 W
на замовлення 446 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 413.18 грн |
10+ | 271.32 грн |
RGT50TS65DGC11 |
Виробник: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 48A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/88ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 49 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 174 W
Description: IGBT TRNCH FIELD 650V 48A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/88ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 49 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 174 W
товар відсутній
SFR18EZPF1503 |
Виробник: Rohm Semiconductor
Description: RES 150K OHM 1% 1/4W 1206
Packaging: Tape & Reel (TR)
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 150 kOhms
Description: RES 150K OHM 1% 1/4W 1206
Packaging: Tape & Reel (TR)
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 150 kOhms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5000+ | 2.53 грн |
SFR18EZPF1503 |
Виробник: Rohm Semiconductor
Description: RES 150K OHM 1% 1/4W 1206
Packaging: Cut Tape (CT)
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 150 kOhms
Description: RES 150K OHM 1% 1/4W 1206
Packaging: Cut Tape (CT)
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 150 kOhms
на замовлення 9950 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
20+ | 15.56 грн |
38+ | 8.09 грн |
54+ | 5.56 грн |
100+ | 4.49 грн |
500+ | 3.3 грн |
1000+ | 2.92 грн |
BD7281YG-CTR |
Виробник: Rohm Semiconductor
Description: NANO CAP, LOW NOISE & INPUT/OUTP
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Push-Pull, Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1.7mA
Slew Rate: 10V/µs
Gain Bandwidth Product: 7 MHz
Current - Input Bias: 0.5 pA
Voltage - Input Offset: 10 µV
Supplier Device Package: 5-SSOP
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Grade: Automotive
Qualification: AEC-Q100
Description: NANO CAP, LOW NOISE & INPUT/OUTP
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Push-Pull, Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1.7mA
Slew Rate: 10V/µs
Gain Bandwidth Product: 7 MHz
Current - Input Bias: 0.5 pA
Voltage - Input Offset: 10 µV
Supplier Device Package: 5-SSOP
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Grade: Automotive
Qualification: AEC-Q100
товар відсутній
BD7281YG-CTR |
Виробник: Rohm Semiconductor
Description: NANO CAP, LOW NOISE & INPUT/OUTP
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Push-Pull, Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1.7mA
Slew Rate: 10V/µs
Gain Bandwidth Product: 7 MHz
Current - Input Bias: 0.5 pA
Voltage - Input Offset: 10 µV
Supplier Device Package: 5-SSOP
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Grade: Automotive
Qualification: AEC-Q100
Description: NANO CAP, LOW NOISE & INPUT/OUTP
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Push-Pull, Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1.7mA
Slew Rate: 10V/µs
Gain Bandwidth Product: 7 MHz
Current - Input Bias: 0.5 pA
Voltage - Input Offset: 10 µV
Supplier Device Package: 5-SSOP
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2368 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 177.41 грн |
10+ | 110.07 грн |
25+ | 94.2 грн |
100+ | 71.54 грн |
250+ | 63.32 грн |
500+ | 58.31 грн |
1000+ | 53.25 грн |
RS6R035BHTB1 |
Виробник: Rohm Semiconductor
Description: NCH 150V 35A, HSOP8, POWER MOSFE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 35A, 10V
Power Dissipation (Max): 3W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-HSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 75 V
Description: NCH 150V 35A, HSOP8, POWER MOSFE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 35A, 10V
Power Dissipation (Max): 3W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-HSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 75 V
товар відсутній
RS6R035BHTB1 |
Виробник: Rohm Semiconductor
Description: NCH 150V 35A, HSOP8, POWER MOSFE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 35A, 10V
Power Dissipation (Max): 3W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-HSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 75 V
Description: NCH 150V 35A, HSOP8, POWER MOSFE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 35A, 10V
Power Dissipation (Max): 3W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-HSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 75 V
на замовлення 2484 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 185.97 грн |
10+ | 148.89 грн |
100+ | 118.5 грн |
500+ | 94.1 грн |
1000+ | 79.84 грн |
LTR100JZPFLR270 |
Виробник: Rohm Semiconductor
Description: RES SMD 0.27 OHM 1% 2W 2512 WIDE
Packaging: Tape & Reel (TR)
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Part Status: Active
Resistance: 270 MOhms
Description: RES SMD 0.27 OHM 1% 2W 2512 WIDE
Packaging: Tape & Reel (TR)
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Part Status: Active
Resistance: 270 MOhms
товар відсутній
LTR100JZPFLR270 |
Виробник: Rohm Semiconductor
Description: RES SMD 0.27 OHM 1% 2W 2512 WIDE
Packaging: Cut Tape (CT)
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Part Status: Active
Resistance: 270 MOhms
Description: RES SMD 0.27 OHM 1% 2W 2512 WIDE
Packaging: Cut Tape (CT)
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Part Status: Active
Resistance: 270 MOhms
на замовлення 3998 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 102.71 грн |
10+ | 58.52 грн |
50+ | 43.1 грн |
100+ | 35.93 грн |
500+ | 28.04 грн |
1000+ | 25.62 грн |
LTR50UZPFLR270 |
Виробник: Rohm Semiconductor
Description: RES SMD 0.27 OHM 1% 2W 2010 WIDE
Packaging: Tape & Reel (TR)
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2010 (5025 Metric), 1020
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.098" L x 0.197" W (2.50mm x 5.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1020
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 270 MOhms
Description: RES SMD 0.27 OHM 1% 2W 2010 WIDE
Packaging: Tape & Reel (TR)
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2010 (5025 Metric), 1020
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.098" L x 0.197" W (2.50mm x 5.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1020
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 270 MOhms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5000+ | 25.6 грн |
LTR50UZPFLR270 |
Виробник: Rohm Semiconductor
Description: RES SMD 0.27 OHM 1% 2W 2010 WIDE
Packaging: Cut Tape (CT)
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2010 (5025 Metric), 1020
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.098" L x 0.197" W (2.50mm x 5.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1020
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 270 MOhms
Description: RES SMD 0.27 OHM 1% 2W 2010 WIDE
Packaging: Cut Tape (CT)
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2010 (5025 Metric), 1020
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.098" L x 0.197" W (2.50mm x 5.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1020
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 270 MOhms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 111.27 грн |
10+ | 63.24 грн |
50+ | 46.53 грн |
100+ | 38.8 грн |
500+ | 30.27 грн |
1000+ | 27.66 грн |
BD82A26MUF-ME2 |
Виробник: Rohm Semiconductor
Description: NANO CAP, WHITE LED DRIVER FOR A
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Voltage - Output: 50V
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 6
Frequency: 270kHz ~ 2.42MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Backlight
Current - Output / Channel: 150mA
Internal Switch(s): No
Topology: Step-Up (Boost)
Supplier Device Package: VQFN32FBV050
Dimming: Analog, PWM
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 48V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: NANO CAP, WHITE LED DRIVER FOR A
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Voltage - Output: 50V
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 6
Frequency: 270kHz ~ 2.42MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Backlight
Current - Output / Channel: 150mA
Internal Switch(s): No
Topology: Step-Up (Boost)
Supplier Device Package: VQFN32FBV050
Dimming: Analog, PWM
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 48V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
товар відсутній
BD82A26MUF-ME2 |
Виробник: Rohm Semiconductor
Description: NANO CAP, WHITE LED DRIVER FOR A
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Voltage - Output: 50V
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 6
Frequency: 270kHz ~ 2.42MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Backlight
Current - Output / Channel: 150mA
Internal Switch(s): No
Topology: Step-Up (Boost)
Supplier Device Package: VQFN32FBV050
Dimming: Analog, PWM
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 48V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: NANO CAP, WHITE LED DRIVER FOR A
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Voltage - Output: 50V
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 6
Frequency: 270kHz ~ 2.42MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Backlight
Current - Output / Channel: 150mA
Internal Switch(s): No
Topology: Step-Up (Boost)
Supplier Device Package: VQFN32FBV050
Dimming: Analog, PWM
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 48V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2350 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 478.55 грн |
10+ | 313.13 грн |
25+ | 274.88 грн |
100+ | 217.68 грн |
250+ | 198.14 грн |
500+ | 186.24 грн |
1000+ | 173.46 грн |
RCJ160N20TL |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 200V 16A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 8A, 10V
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5.25V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 25 V
Description: MOSFET N-CH 200V 16A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 8A, 10V
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5.25V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1000+ | 57.5 грн |
RCJ160N20TL |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 200V 16A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 8A, 10V
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5.25V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 25 V
Description: MOSFET N-CH 200V 16A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 8A, 10V
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5.25V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 176.63 грн |
10+ | 109.55 грн |
100+ | 74.98 грн |
500+ | 56.44 грн |
RR264MM-400TFTR |
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 400V 700MA PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 700mA
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE GEN PURP 400V 700MA PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 700mA
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 31819 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 26.46 грн |
16+ | 19.86 грн |
100+ | 11.92 грн |
500+ | 10.36 грн |
1000+ | 7.05 грн |
BD6973FV-E2 |
Виробник: Rohm Semiconductor
Description: IC MOTOR DRIVER 4.3V-17V 16SSOPB
Packaging: Tape & Reel (TR)
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 12mA
Interface: PWM
Operating Temperature: -40°C ~ 100°C
Output Configuration: Pre-Driver - Half Bridge (2)
Voltage - Supply: 4.3V ~ 17V
Applications: Fan Controller
Technology: NMOS, PMOS
Supplier Device Package: 16-SSOP-B
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Description: IC MOTOR DRIVER 4.3V-17V 16SSOPB
Packaging: Tape & Reel (TR)
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 12mA
Interface: PWM
Operating Temperature: -40°C ~ 100°C
Output Configuration: Pre-Driver - Half Bridge (2)
Voltage - Supply: 4.3V ~ 17V
Applications: Fan Controller
Technology: NMOS, PMOS
Supplier Device Package: 16-SSOP-B
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
товар відсутній
BD6974FV-E2 |
Виробник: Rohm Semiconductor
Description: IC MOTOR DRIVER 4.3V-17V 16SSOPB
Description: IC MOTOR DRIVER 4.3V-17V 16SSOPB
товар відсутній
BD63800MUF-EVK-002 |
Виробник: Rohm Semiconductor
Description: EVAL BOARD FOR BD63800
Description: EVAL BOARD FOR BD63800
на замовлення 2 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 19293.61 грн |
SDR03EZPF6200 |
Виробник: Rohm Semiconductor
Description: RES 620 OHM 1% 0.3W 0603
Power (Watts): 0.3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 620 Ohms
Description: RES 620 OHM 1% 0.3W 0603
Power (Watts): 0.3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 620 Ohms
товар відсутній
SDR03EZPF6200 |
Виробник: Rohm Semiconductor
Description: RES 620 OHM 1% 0.3W 0603
Power (Watts): 0.3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 620 Ohms
Description: RES 620 OHM 1% 0.3W 0603
Power (Watts): 0.3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 620 Ohms
на замовлення 800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
25+ | 12.45 грн |
50+ | 6.07 грн |
73+ | 4.11 грн |
100+ | 3.28 грн |
500+ | 2.36 грн |
VS54VLNVWMTR |
Виробник: Rohm Semiconductor
Description: 54V 200W, COMPACT AND HIGHLY REL
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.2A
Voltage - Reverse Standoff (Typ): 54V (Max)
Supplier Device Package: PMDE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 58V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 200W
Power Line Protection: No
Description: 54V 200W, COMPACT AND HIGHLY REL
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.2A
Voltage - Reverse Standoff (Typ): 54V (Max)
Supplier Device Package: PMDE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 58V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 200W
Power Line Protection: No
товар відсутній
VS54VLNVWMTR |
Виробник: Rohm Semiconductor
Description: 54V 200W, COMPACT AND HIGHLY REL
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.2A
Voltage - Reverse Standoff (Typ): 54V (Max)
Supplier Device Package: PMDE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 58V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 200W
Power Line Protection: No
Description: 54V 200W, COMPACT AND HIGHLY REL
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.2A
Voltage - Reverse Standoff (Typ): 54V (Max)
Supplier Device Package: PMDE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 58V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 200W
Power Line Protection: No
на замовлення 1628 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 36.57 грн |
10+ | 30.05 грн |
100+ | 20.89 грн |
500+ | 15.31 грн |
1000+ | 12.44 грн |
VS54VLNVWMTFTR |
Виробник: Rohm Semiconductor
Description: 54V 200W, COMPACT AND HIGHLY REL
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.2A
Voltage - Reverse Standoff (Typ): 54V (Max)
Supplier Device Package: PMDE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 58V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 200W
Power Line Protection: No
Description: 54V 200W, COMPACT AND HIGHLY REL
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.2A
Voltage - Reverse Standoff (Typ): 54V (Max)
Supplier Device Package: PMDE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 58V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 200W
Power Line Protection: No
товар відсутній
VS54VLNVWMTFTR |
Виробник: Rohm Semiconductor
Description: 54V 200W, COMPACT AND HIGHLY REL
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.2A
Voltage - Reverse Standoff (Typ): 54V (Max)
Supplier Device Package: PMDE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 58V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 200W
Power Line Protection: No
Description: 54V 200W, COMPACT AND HIGHLY REL
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.2A
Voltage - Reverse Standoff (Typ): 54V (Max)
Supplier Device Package: PMDE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 58V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 200W
Power Line Protection: No
на замовлення 2865 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 43.58 грн |
10+ | 35.89 грн |
100+ | 24.98 грн |
500+ | 18.3 грн |
1000+ | 14.88 грн |
SFR10EZPF68R0 |
Виробник: Rohm Semiconductor
Description: RES 68 OHM 1% 1/8W 0805
Packaging: Tape & Reel (TR)
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 68 Ohms
Description: RES 68 OHM 1% 1/8W 0805
Packaging: Tape & Reel (TR)
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 68 Ohms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5000+ | 1.86 грн |
SFR10EZPF68R0 |
Виробник: Rohm Semiconductor
Description: RES 68 OHM 1% 1/8W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 68 Ohms
Description: RES 68 OHM 1% 1/8W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 68 Ohms
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
23+ | 14.01 грн |
47+ | 6.44 грн |
70+ | 4.33 грн |
100+ | 3.47 грн |
500+ | 2.49 грн |
1000+ | 2.19 грн |
SDR03EZPD68R0 |
Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Description: HIGH ANTI-SURGE THICK FILM CHIP
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5000+ | 2.07 грн |
SDR03EZPD68R0 |
Виробник: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Description: HIGH ANTI-SURGE THICK FILM CHIP
на замовлення 9915 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
18+ | 17.9 грн |
21+ | 14.69 грн |
100+ | 5.72 грн |
1000+ | 2.25 грн |
2500+ | 2.06 грн |
SDR10EZPF68R0 |
Виробник: Rohm Semiconductor
Description: RES 68 OHM 1% 1/2W 0805
Packaging: Tape & Reel (TR)
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 68 Ohms
Description: RES 68 OHM 1% 1/2W 0805
Packaging: Tape & Reel (TR)
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 68 Ohms
товар відсутній
SDR10EZPF68R0 |
Виробник: Rohm Semiconductor
Description: RES 68 OHM 1% 1/2W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 68 Ohms
Description: RES 68 OHM 1% 1/2W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 68 Ohms
на замовлення 4800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
18+ | 17.9 грн |
34+ | 8.99 грн |
50+ | 6.19 грн |
100+ | 4.99 грн |
500+ | 3.67 грн |
1000+ | 3.25 грн |
BH1900NUX-EVK-001 |
Виробник: Rohm Semiconductor
Description: TEMPERATURE SENSOR EVALUATION BO
Description: TEMPERATURE SENSOR EVALUATION BO
на замовлення 5 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2117.28 грн |
RBR5L60ADDTE25 |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 5A PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 250 µA @ 60 V
Description: DIODE SCHOTTKY 60V 5A PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 250 µA @ 60 V
товар відсутній
RBR5L60ADDTE25 |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 5A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 250 µA @ 60 V
Description: DIODE SCHOTTKY 60V 5A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 250 µA @ 60 V
на замовлення 284 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 62.25 грн |
10+ | 49.08 грн |
100+ | 38.16 грн |
RBR20NS40ATL |
Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 40V 10A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 10 A
Current - Reverse Leakage @ Vr: 240 µA @ 40 V
Description: DIODE ARRAY SCHOTT 40V 10A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 10 A
Current - Reverse Leakage @ Vr: 240 µA @ 40 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1000+ | 52.46 грн |
RBR20NS40ATL |
Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 40V 10A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 10 A
Current - Reverse Leakage @ Vr: 240 µA @ 40 V
Description: DIODE ARRAY SCHOTT 40V 10A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 10 A
Current - Reverse Leakage @ Vr: 240 µA @ 40 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 110.49 грн |