Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (100328) > Сторінка 804 з 1673
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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BU45K422G-TL | Rohm Semiconductor | Description: IC SUPERVISOR 1 CHANNEL 3SSOP |
товар відсутній |
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BU45K484G-TL | Rohm Semiconductor | Description: IC SUPERVISOR 1 CHANNEL 3SSOP |
на замовлення 2963 шт: термін постачання 21-31 дні (днів) |
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BU45L334G-TL | Rohm Semiconductor | Description: VOLTAGE DETECTOR WITH FIXED DELA |
на замовлення 2975 шт: термін постачання 21-31 дні (днів) |
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BU46K244G-TL | Rohm Semiconductor | Description: IC SUPERVISOR 1 CHANNEL 3SSOP |
на замовлення 2940 шт: термін постачання 21-31 дні (днів) |
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BU46K274G-TL | Rohm Semiconductor | Description: IC SUPERVISOR 1 CHANNEL 3SSOP |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BU46L292G-TL | Rohm Semiconductor |
Description: IC SUPERVISOR 1 CHANNEL 3SSOP Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Output: Push-Pull, Totem Pole Type: Voltage Detector Reset: Active Low Operating Temperature: -40°C ~ 105°C (TA) Number of Voltages Monitored: 1 Reset Timeout: 120ms Minimum Voltage - Threshold: 2.9V Supplier Device Package: 3-SSOP Part Status: Obsolete DigiKey Programmable: Not Verified |
товар відсутній |
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BU52075GWZ-E2 | Rohm Semiconductor |
Description: MAGNETIC SWITCH OMNIPOLAR Packaging: Cut Tape (CT) Package / Case: 4-XFBGA, CSPBGA Output Type: CMOS Polarization: North Pole, South Pole Mounting Type: Surface Mount Function: Omnipolar Switch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 3.6V Technology: Hall Effect Sensing Range: ±11.6mT Trip, ±6.5mT Release Current - Output (Max): 500µA Current - Supply (Max): 8µA Test Condition: 25°C |
на замовлення 10390 шт: термін постачання 21-31 дні (днів) |
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BU52078GWZ-E2 | Rohm Semiconductor | Description: OMNIPOLAR DETECTION HALL IC |
на замовлення 815 шт: термін постачання 21-31 дні (днів) |
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RF2001NS2DTL | Rohm Semiconductor |
Description: DIODE ARRAY GP 200V 20A TO263AB Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-263AB Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 930 mV @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
на замовлення 30 шт: термін постачання 21-31 дні (днів) |
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SCS206AJHRTLL | Rohm Semiconductor |
Description: DIODE SIL CARB 650V 6A TO263AB Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 219pF @ 1V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: TO-263AB Operating Temperature - Junction: 175°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 6 A Current - Reverse Leakage @ Vr: 120 µA @ 600 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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SCS208AJHRTLL | Rohm Semiconductor |
Description: DIODE SIL CARB 650V 8A TO263AB Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 291pF @ 1V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-263AB Operating Temperature - Junction: 175°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 8 A Current - Reverse Leakage @ Vr: 160 µA @ 600 V Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |
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SCS210AJHRTLL | Rohm Semiconductor |
Description: DIODE SIL CARB 650V 10A TO263AB Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 365pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-263AB Operating Temperature - Junction: 175°C (Max) Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10 Voltage Coupled to Current - Reverse Leakage @ Vr: 600 Current - Reverse Leakage @ Vr: 200 µA @ 600 V Reverse Recovery Time (trr): 0 ns Voltage - DC Reverse (Vr) (Max): 650 V Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |
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SCS212AJHRTLL | Rohm Semiconductor |
Description: DIODE SIL CARB 650V 12A TO263AB Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 438pF @ 1V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: TO-263AB Operating Temperature - Junction: 175°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 12 A Current - Reverse Leakage @ Vr: 240 µA @ 600 V Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |
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SCS220AJHRTLL | Rohm Semiconductor |
Description: DIODE SIL CARB 650V 20A TO263AB Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 730pF @ 1V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: TO-263AB Operating Temperature - Junction: 175°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A Current - Reverse Leakage @ Vr: 400 µA @ 600 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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SCS206AJHRTLL | Rohm Semiconductor |
Description: DIODE SIL CARB 650V 6A TO263AB Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 219pF @ 1V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: TO-263AB Operating Temperature - Junction: 175°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 6 A Current - Reverse Leakage @ Vr: 120 µA @ 600 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2756 шт: термін постачання 21-31 дні (днів) |
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SCS208AJHRTLL | Rohm Semiconductor |
Description: DIODE SIL CARB 650V 8A TO263AB Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 291pF @ 1V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-263AB Operating Temperature - Junction: 175°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 8 A Current - Reverse Leakage @ Vr: 160 µA @ 600 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 932 шт: термін постачання 21-31 дні (днів) |
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SCS210AJHRTLL | Rohm Semiconductor |
Description: DIODE SIL CARB 650V 10A TO263AB Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 365pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-263AB Operating Temperature - Junction: 175°C (Max) Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10 Voltage Coupled to Current - Reverse Leakage @ Vr: 600 Current - Reverse Leakage @ Vr: 200 µA @ 600 V Reverse Recovery Time (trr): 0 ns Voltage - DC Reverse (Vr) (Max): 650 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 910 шт: термін постачання 21-31 дні (днів) |
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SCS212AJHRTLL | Rohm Semiconductor |
Description: DIODE SIL CARB 650V 12A TO263AB Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 438pF @ 1V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: TO-263AB Operating Temperature - Junction: 175°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 12 A Current - Reverse Leakage @ Vr: 240 µA @ 600 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 40 шт: термін постачання 21-31 дні (днів) |
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SCS220AJHRTLL | Rohm Semiconductor |
Description: DIODE SIL CARB 650V 20A TO263AB Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 730pF @ 1V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: TO-263AB Operating Temperature - Junction: 175°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A Current - Reverse Leakage @ Vr: 400 µA @ 600 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2697 шт: термін постачання 21-31 дні (днів) |
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PDZVTR10A | Rohm Semiconductor | Description: ZENER DIODE |
товар відсутній |
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PDZVTR11A | Rohm Semiconductor | Description: ZENER DIODE |
товар відсутній |
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PDZVTR12B | Rohm Semiconductor |
Description: DIODE ZENER 12.75V 1W PMDTM Packaging: Tape & Reel (TR) Tolerance: ±5.88% Package / Case: SOD-128 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 12.75 V Impedance (Max) (Zzt): 8 Ohms Supplier Device Package: PMDTM Power - Max: 1 W Current - Reverse Leakage @ Vr: 10 µA @ 9 V |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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PDZVTR16B | Rohm Semiconductor |
Description: DIODE ZENER 17.25V 1W PMDTM Packaging: Tape & Reel (TR) Tolerance: ±6.09% Package / Case: SOD-128 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 17.25 V Impedance (Max) (Zzt): 12 Ohms Supplier Device Package: PMDTM Power - Max: 1 W Current - Reverse Leakage @ Vr: 10 µA @ 12 V |
товар відсутній |
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PDZVTR18B | Rohm Semiconductor |
Description: DIODE ZENER 19.15V 1W PMDTM Packaging: Tape & Reel (TR) Tolerance: ±6.01% Package / Case: SOD-128 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 18 V Impedance (Max) (Zzt): 12 Ohms Supplier Device Package: PMDTM Power - Max: 1 W Current - Reverse Leakage @ Vr: 10 µA @ 13 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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PDZVTR24A | Rohm Semiconductor |
Description: DIODE ZENER 24.2V 1W PMDTM Packaging: Tape & Reel (TR) Tolerance: ±5.79% Package / Case: SOD-128 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 24.2 V Impedance (Max) (Zzt): 16 Ohms Supplier Device Package: PMDTM Power - Max: 1 W Current - Reverse Leakage @ Vr: 10 µA @ 19 V |
товар відсутній |
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PDZVTR27A | Rohm Semiconductor | Description: ZENER DIODE |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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PDZVTR27B | Rohm Semiconductor | Description: ZENER DIODE |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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PDZVTR3.6B | Rohm Semiconductor |
Description: DIODE ZENER 3.8V 1W PMDTM Packaging: Tape & Reel (TR) Tolerance: ±5.26% Package / Case: SOD-128 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 3.8 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: PMDTM Power - Max: 1 W Current - Reverse Leakage @ Vr: 10 µA @ 27 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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PDZVTR30B | Rohm Semiconductor |
Description: DIODE ZENER 32V 1W PMDTM Packaging: Tape & Reel (TR) Tolerance: ±6.25% Package / Case: SOD-128 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 32 V Impedance (Max) (Zzt): 18 Ohms Supplier Device Package: PMDTM Part Status: Active Power - Max: 1 W Current - Reverse Leakage @ Vr: 10 µA @ 23 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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PDZVTR36B | Rohm Semiconductor |
Description: DIODE ZENER 38V 1W PMDTM Packaging: Tape & Reel (TR) Tolerance: ±5.26% Package / Case: SOD-128 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 38 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: PMDTM Power - Max: 1 W Current - Reverse Leakage @ Vr: 10 µA @ 27 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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PDZVTR4.3B | Rohm Semiconductor |
Description: DIODE ZENER 4.55V 1W PMDTM Packaging: Tape & Reel (TR) Tolerance: ±5.49% Package / Case: SOD-128 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 4.55 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: PMDTM Power - Max: 1 W Current - Reverse Leakage @ Vr: 20 µA @ 1 V |
товар відсутній |
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PDZVTR4.7B | Rohm Semiconductor | Description: DIODE ZENER 4.95V 1W PMDTM |
товар відсутній |
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PDZVTR43A | Rohm Semiconductor | Description: ZENER DIODE |
товар відсутній |
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PDZVTR5.1B | Rohm Semiconductor |
Description: DIODE ZENER 5.1V 1W PMDTM Packaging: Tape & Reel (TR) Tolerance: ±5.88% Package / Case: SOD-128 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 8 Ohms Supplier Device Package: PMDTM Power - Max: 1 W Current - Reverse Leakage @ Vr: 20 µA @ 1 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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PDZVTR5.6A | Rohm Semiconductor | Description: ZENER DIODE |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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PDZVTR6.8B | Rohm Semiconductor | Description: DIODE ZENER 7.25V 1W PMDTM |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RB050LAM-60TR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 60V 3A PMDTM Packaging: Tape & Reel (TR) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: PMDTM Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 560 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 60 V |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
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RF071LAM4STR | Rohm Semiconductor | Description: DIODE GEN PURP 400V 1A PMDTM |
товар відсутній |
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RF201LAM4STR | Rohm Semiconductor |
Description: DIODE GEN PURP 400V 1.5A PMDTM Packaging: Tape & Reel (TR) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 1.5A Supplier Device Package: PMDTM Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1.5 A Current - Reverse Leakage @ Vr: 1 µA @ 400 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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RFN2LAM4STR | Rohm Semiconductor | Description: DIODE GEN PURP 400V 1.5A PMDTM |
товар відсутній |
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TDZVTR16 | Rohm Semiconductor | Description: DIODE ZENER 16V 500MW TUMD2M |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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TDZVTR18 | Rohm Semiconductor | Description: DIODE ZENER 18V 500MW TUMD2M |
товар відсутній |
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TDZVTR6.2 | Rohm Semiconductor | Description: DIODE ZENER 6.2V 500MW TUMD2M |
товар відсутній |
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PDZVTR10A | Rohm Semiconductor | Description: ZENER DIODE |
на замовлення 2995 шт: термін постачання 21-31 дні (днів) |
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PDZVTR11A | Rohm Semiconductor | Description: ZENER DIODE |
на замовлення 2990 шт: термін постачання 21-31 дні (днів) |
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PDZVTR12B | Rohm Semiconductor |
Description: DIODE ZENER 12.75V 1W PMDTM Packaging: Cut Tape (CT) Tolerance: ±5.88% Package / Case: SOD-128 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 12.75 V Impedance (Max) (Zzt): 8 Ohms Supplier Device Package: PMDTM Power - Max: 1 W Current - Reverse Leakage @ Vr: 10 µA @ 9 V |
на замовлення 14420 шт: термін постачання 21-31 дні (днів) |
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PDZVTR16B | Rohm Semiconductor |
Description: DIODE ZENER 17.25V 1W PMDTM Packaging: Cut Tape (CT) Tolerance: ±6.09% Package / Case: SOD-128 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 17.25 V Impedance (Max) (Zzt): 12 Ohms Supplier Device Package: PMDTM Power - Max: 1 W Current - Reverse Leakage @ Vr: 10 µA @ 12 V |
на замовлення 2977 шт: термін постачання 21-31 дні (днів) |
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PDZVTR18B | Rohm Semiconductor |
Description: DIODE ZENER 19.15V 1W PMDTM Packaging: Cut Tape (CT) Tolerance: ±6.01% Package / Case: SOD-128 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 18 V Impedance (Max) (Zzt): 12 Ohms Supplier Device Package: PMDTM Power - Max: 1 W Current - Reverse Leakage @ Vr: 10 µA @ 13 V |
на замовлення 7235 шт: термін постачання 21-31 дні (днів) |
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PDZVTR24A | Rohm Semiconductor |
Description: DIODE ZENER 24.2V 1W PMDTM Packaging: Cut Tape (CT) Tolerance: ±5.79% Package / Case: SOD-128 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 24.2 V Impedance (Max) (Zzt): 16 Ohms Supplier Device Package: PMDTM Power - Max: 1 W Current - Reverse Leakage @ Vr: 10 µA @ 19 V |
на замовлення 2830 шт: термін постачання 21-31 дні (днів) |
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PDZVTR27A | Rohm Semiconductor | Description: ZENER DIODE |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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PDZVTR27B | Rohm Semiconductor | Description: ZENER DIODE |
на замовлення 5914 шт: термін постачання 21-31 дні (днів) |
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PDZVTR3.6B | Rohm Semiconductor |
Description: DIODE ZENER 3.8V 1W PMDTM Packaging: Cut Tape (CT) Tolerance: ±5.26% Package / Case: SOD-128 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 3.8 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: PMDTM Power - Max: 1 W Current - Reverse Leakage @ Vr: 10 µA @ 27 V |
на замовлення 9969 шт: термін постачання 21-31 дні (днів) |
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PDZVTR36B | Rohm Semiconductor |
Description: DIODE ZENER 38V 1W PMDTM Packaging: Cut Tape (CT) Tolerance: ±5.26% Package / Case: SOD-128 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 38 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: PMDTM Power - Max: 1 W Current - Reverse Leakage @ Vr: 10 µA @ 27 V |
на замовлення 4044 шт: термін постачання 21-31 дні (днів) |
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PDZVTR4.3B | Rohm Semiconductor |
Description: DIODE ZENER 4.55V 1W PMDTM Packaging: Cut Tape (CT) Tolerance: ±5.49% Package / Case: SOD-128 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 4.55 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: PMDTM Power - Max: 1 W Current - Reverse Leakage @ Vr: 20 µA @ 1 V |
на замовлення 3254 шт: термін постачання 21-31 дні (днів) |
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PDZVTR4.7B | Rohm Semiconductor | Description: DIODE ZENER 4.95V 1W PMDTM |
на замовлення 27 шт: термін постачання 21-31 дні (днів) |
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PDZVTR43A | Rohm Semiconductor | Description: ZENER DIODE |
на замовлення 2978 шт: термін постачання 21-31 дні (днів) |
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PDZVTR5.1B | Rohm Semiconductor |
Description: DIODE ZENER 5.1V 1W PMDTM Packaging: Cut Tape (CT) Tolerance: ±5.88% Package / Case: SOD-128 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 8 Ohms Supplier Device Package: PMDTM Power - Max: 1 W Current - Reverse Leakage @ Vr: 20 µA @ 1 V |
на замовлення 11144 шт: термін постачання 21-31 дні (днів) |
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PDZVTR5.6A | Rohm Semiconductor | Description: ZENER DIODE |
на замовлення 3474 шт: термін постачання 21-31 дні (днів) |
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PDZVTR6.8B | Rohm Semiconductor | Description: DIODE ZENER 7.25V 1W PMDTM |
на замовлення 3292 шт: термін постачання 21-31 дні (днів) |
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RB050LAM-60TR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 60V 3A PMDTM Packaging: Cut Tape (CT) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: PMDTM Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 560 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 60 V |
на замовлення 25894 шт: термін постачання 21-31 дні (днів) |
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BU45K484G-TL |
Виробник: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
на замовлення 2963 шт:
термін постачання 21-31 дні (днів)BU45L334G-TL |
Виробник: Rohm Semiconductor
Description: VOLTAGE DETECTOR WITH FIXED DELA
Description: VOLTAGE DETECTOR WITH FIXED DELA
на замовлення 2975 шт:
термін постачання 21-31 дні (днів)BU46K244G-TL |
Виробник: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
на замовлення 2940 шт:
термін постачання 21-31 дні (днів)BU46K274G-TL |
Виробник: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)BU46L292G-TL |
Виробник: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Voltage Detector
Reset: Active Low
Operating Temperature: -40°C ~ 105°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 120ms Minimum
Voltage - Threshold: 2.9V
Supplier Device Package: 3-SSOP
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC SUPERVISOR 1 CHANNEL 3SSOP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Voltage Detector
Reset: Active Low
Operating Temperature: -40°C ~ 105°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 120ms Minimum
Voltage - Threshold: 2.9V
Supplier Device Package: 3-SSOP
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
BU52075GWZ-E2 |
Виробник: Rohm Semiconductor
Description: MAGNETIC SWITCH OMNIPOLAR
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Output Type: CMOS
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Technology: Hall Effect
Sensing Range: ±11.6mT Trip, ±6.5mT Release
Current - Output (Max): 500µA
Current - Supply (Max): 8µA
Test Condition: 25°C
Description: MAGNETIC SWITCH OMNIPOLAR
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Output Type: CMOS
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Technology: Hall Effect
Sensing Range: ±11.6mT Trip, ±6.5mT Release
Current - Output (Max): 500µA
Current - Supply (Max): 8µA
Test Condition: 25°C
на замовлення 10390 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 32.68 грн |
12+ | 26.23 грн |
25+ | 23.05 грн |
50+ | 20.29 грн |
100+ | 17.31 грн |
500+ | 14.31 грн |
1000+ | 11.78 грн |
BU52078GWZ-E2 |
Виробник: Rohm Semiconductor
Description: OMNIPOLAR DETECTION HALL IC
Description: OMNIPOLAR DETECTION HALL IC
на замовлення 815 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 33.46 грн |
11+ | 28.92 грн |
12+ | 25.7 грн |
25+ | 21.57 грн |
50+ | 18.97 грн |
100+ | 16.17 грн |
500+ | 13.15 грн |
RF2001NS2DTL |
Виробник: Rohm Semiconductor
Description: DIODE ARRAY GP 200V 20A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE ARRAY GP 200V 20A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 214.76 грн |
10+ | 134.13 грн |
SCS206AJHRTLL |
Виробник: Rohm Semiconductor
Description: DIODE SIL CARB 650V 6A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 219pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: 175°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 6 A
Current - Reverse Leakage @ Vr: 120 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SIL CARB 650V 6A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 219pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: 175°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 6 A
Current - Reverse Leakage @ Vr: 120 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1000+ | 163.7 грн |
SCS208AJHRTLL |
Виробник: Rohm Semiconductor
Description: DIODE SIL CARB 650V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 291pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: 175°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 8 A
Current - Reverse Leakage @ Vr: 160 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SIL CARB 650V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 291pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: 175°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 8 A
Current - Reverse Leakage @ Vr: 160 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
SCS210AJHRTLL |
Виробник: Rohm Semiconductor
Description: DIODE SIL CARB 650V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 365pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: 175°C (Max)
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Reverse Recovery Time (trr): 0 ns
Voltage - DC Reverse (Vr) (Max): 650 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SIL CARB 650V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 365pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: 175°C (Max)
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Reverse Recovery Time (trr): 0 ns
Voltage - DC Reverse (Vr) (Max): 650 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
SCS212AJHRTLL |
Виробник: Rohm Semiconductor
Description: DIODE SIL CARB 650V 12A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 438pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: 175°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 12 A
Current - Reverse Leakage @ Vr: 240 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SIL CARB 650V 12A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 438pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: 175°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 12 A
Current - Reverse Leakage @ Vr: 240 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
SCS220AJHRTLL |
Виробник: Rohm Semiconductor
Description: DIODE SIL CARB 650V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 730pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: 175°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SIL CARB 650V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 730pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: 175°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1000+ | 490.9 грн |
SCS206AJHRTLL |
Виробник: Rohm Semiconductor
Description: DIODE SIL CARB 650V 6A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 219pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: 175°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 6 A
Current - Reverse Leakage @ Vr: 120 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SIL CARB 650V 6A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 219pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: 175°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 6 A
Current - Reverse Leakage @ Vr: 120 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2756 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 438.08 грн |
10+ | 283.39 грн |
100+ | 204.65 грн |
500+ | 160.47 грн |
SCS208AJHRTLL |
Виробник: Rohm Semiconductor
Description: DIODE SIL CARB 650V 8A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 291pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: 175°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 8 A
Current - Reverse Leakage @ Vr: 160 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SIL CARB 650V 8A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 291pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: 175°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 8 A
Current - Reverse Leakage @ Vr: 160 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 932 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 516.68 грн |
10+ | 336.74 грн |
100+ | 245.62 грн |
500+ | 193.98 грн |
SCS210AJHRTLL |
Виробник: Rohm Semiconductor
Description: DIODE SIL CARB 650V 10A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 365pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: 175°C (Max)
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Reverse Recovery Time (trr): 0 ns
Voltage - DC Reverse (Vr) (Max): 650 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SIL CARB 650V 10A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 365pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: 175°C (Max)
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Reverse Recovery Time (trr): 0 ns
Voltage - DC Reverse (Vr) (Max): 650 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 910 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 591.38 грн |
10+ | 388.22 грн |
100+ | 285.58 грн |
500+ | 231.17 грн |
SCS212AJHRTLL |
Виробник: Rohm Semiconductor
Description: DIODE SIL CARB 650V 12A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 438pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: 175°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 12 A
Current - Reverse Leakage @ Vr: 240 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SIL CARB 650V 12A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 438pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: 175°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 12 A
Current - Reverse Leakage @ Vr: 240 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 40 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 588.26 грн |
10+ | 485.77 грн |
SCS220AJHRTLL |
Виробник: Rohm Semiconductor
Description: DIODE SIL CARB 650V 20A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 730pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: 175°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SIL CARB 650V 20A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 730pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: 175°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 400 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2697 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 775.01 грн |
10+ | 657.52 грн |
100+ | 568.69 грн |
500+ | 483.66 грн |
PDZVTR12B |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 12.75V 1W PMDTM
Packaging: Tape & Reel (TR)
Tolerance: ±5.88%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12.75 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 9 V
Description: DIODE ZENER 12.75V 1W PMDTM
Packaging: Tape & Reel (TR)
Tolerance: ±5.88%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12.75 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 9 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 7.62 грн |
6000+ | 7.04 грн |
9000+ | 6.33 грн |
PDZVTR16B |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 17.25V 1W PMDTM
Packaging: Tape & Reel (TR)
Tolerance: ±6.09%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 17.25 V
Impedance (Max) (Zzt): 12 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 12 V
Description: DIODE ZENER 17.25V 1W PMDTM
Packaging: Tape & Reel (TR)
Tolerance: ±6.09%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 17.25 V
Impedance (Max) (Zzt): 12 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 12 V
товар відсутній
PDZVTR18B |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 19.15V 1W PMDTM
Packaging: Tape & Reel (TR)
Tolerance: ±6.01%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 12 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 13 V
Description: DIODE ZENER 19.15V 1W PMDTM
Packaging: Tape & Reel (TR)
Tolerance: ±6.01%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 12 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 13 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 7.72 грн |
PDZVTR24A |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 24.2V 1W PMDTM
Packaging: Tape & Reel (TR)
Tolerance: ±5.79%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24.2 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 19 V
Description: DIODE ZENER 24.2V 1W PMDTM
Packaging: Tape & Reel (TR)
Tolerance: ±5.79%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24.2 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 19 V
товар відсутній
PDZVTR27A |
Виробник: Rohm Semiconductor
Description: ZENER DIODE
Description: ZENER DIODE
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)PDZVTR27B |
Виробник: Rohm Semiconductor
Description: ZENER DIODE
Description: ZENER DIODE
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)PDZVTR3.6B |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 3.8V 1W PMDTM
Packaging: Tape & Reel (TR)
Tolerance: ±5.26%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.8 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 27 V
Description: DIODE ZENER 3.8V 1W PMDTM
Packaging: Tape & Reel (TR)
Tolerance: ±5.26%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.8 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 27 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 8.49 грн |
6000+ | 7.83 грн |
PDZVTR30B |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 32V 1W PMDTM
Packaging: Tape & Reel (TR)
Tolerance: ±6.25%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 32 V
Impedance (Max) (Zzt): 18 Ohms
Supplier Device Package: PMDTM
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 23 V
Description: DIODE ZENER 32V 1W PMDTM
Packaging: Tape & Reel (TR)
Tolerance: ±6.25%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 32 V
Impedance (Max) (Zzt): 18 Ohms
Supplier Device Package: PMDTM
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 23 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 8.5 грн |
PDZVTR36B |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 38V 1W PMDTM
Packaging: Tape & Reel (TR)
Tolerance: ±5.26%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 38 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 27 V
Description: DIODE ZENER 38V 1W PMDTM
Packaging: Tape & Reel (TR)
Tolerance: ±5.26%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 38 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 27 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 7.69 грн |
PDZVTR4.3B |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 4.55V 1W PMDTM
Packaging: Tape & Reel (TR)
Tolerance: ±5.49%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.55 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Description: DIODE ZENER 4.55V 1W PMDTM
Packaging: Tape & Reel (TR)
Tolerance: ±5.49%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.55 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
товар відсутній
PDZVTR5.1B |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 5.1V 1W PMDTM
Packaging: Tape & Reel (TR)
Tolerance: ±5.88%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Description: DIODE ZENER 5.1V 1W PMDTM
Packaging: Tape & Reel (TR)
Tolerance: ±5.88%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 8.43 грн |
6000+ | 7.78 грн |
PDZVTR5.6A |
Виробник: Rohm Semiconductor
Description: ZENER DIODE
Description: ZENER DIODE
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)PDZVTR6.8B |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 7.25V 1W PMDTM
Description: DIODE ZENER 7.25V 1W PMDTM
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)RB050LAM-60TR |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 3A PMDTM
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Description: DIODE SCHOTTKY 60V 3A PMDTM
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 9.06 грн |
6000+ | 8.36 грн |
9000+ | 7.53 грн |
RF201LAM4STR |
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 400V 1.5A PMDTM
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1.5A
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Description: DIODE GEN PURP 400V 1.5A PMDTM
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1.5A
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 11.82 грн |
6000+ | 10.81 грн |
TDZVTR16 |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 16V 500MW TUMD2M
Description: DIODE ZENER 16V 500MW TUMD2M
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)PDZVTR10A |
Виробник: Rohm Semiconductor
Description: ZENER DIODE
Description: ZENER DIODE
на замовлення 2995 шт:
термін постачання 21-31 дні (днів)PDZVTR11A |
Виробник: Rohm Semiconductor
Description: ZENER DIODE
Description: ZENER DIODE
на замовлення 2990 шт:
термін постачання 21-31 дні (днів)PDZVTR12B |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 12.75V 1W PMDTM
Packaging: Cut Tape (CT)
Tolerance: ±5.88%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12.75 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 9 V
Description: DIODE ZENER 12.75V 1W PMDTM
Packaging: Cut Tape (CT)
Tolerance: ±5.88%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12.75 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 9 V
на замовлення 14420 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 28.01 грн |
15+ | 21.13 грн |
100+ | 12.66 грн |
500+ | 11.01 грн |
1000+ | 7.49 грн |
PDZVTR16B |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 17.25V 1W PMDTM
Packaging: Cut Tape (CT)
Tolerance: ±6.09%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 17.25 V
Impedance (Max) (Zzt): 12 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 12 V
Description: DIODE ZENER 17.25V 1W PMDTM
Packaging: Cut Tape (CT)
Tolerance: ±6.09%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 17.25 V
Impedance (Max) (Zzt): 12 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 12 V
на замовлення 2977 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 31.9 грн |
13+ | 23.9 грн |
100+ | 14.35 грн |
500+ | 12.47 грн |
1000+ | 8.48 грн |
PDZVTR18B |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 19.15V 1W PMDTM
Packaging: Cut Tape (CT)
Tolerance: ±6.01%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 12 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 13 V
Description: DIODE ZENER 19.15V 1W PMDTM
Packaging: Cut Tape (CT)
Tolerance: ±6.01%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 12 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 13 V
на замовлення 7235 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 28.79 грн |
15+ | 21.36 грн |
100+ | 12.83 грн |
500+ | 11.15 грн |
1000+ | 7.58 грн |
PDZVTR24A |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 24.2V 1W PMDTM
Packaging: Cut Tape (CT)
Tolerance: ±5.79%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24.2 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 19 V
Description: DIODE ZENER 24.2V 1W PMDTM
Packaging: Cut Tape (CT)
Tolerance: ±5.79%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24.2 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 19 V
на замовлення 2830 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 40.46 грн |
13+ | 24.2 грн |
100+ | 15.48 грн |
500+ | 10.96 грн |
1000+ | 9.81 грн |
PDZVTR27A |
Виробник: Rohm Semiconductor
Description: ZENER DIODE
Description: ZENER DIODE
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)PDZVTR27B |
Виробник: Rohm Semiconductor
Description: ZENER DIODE
Description: ZENER DIODE
на замовлення 5914 шт:
термін постачання 21-31 дні (днів)PDZVTR3.6B |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 3.8V 1W PMDTM
Packaging: Cut Tape (CT)
Tolerance: ±5.26%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.8 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 27 V
Description: DIODE ZENER 3.8V 1W PMDTM
Packaging: Cut Tape (CT)
Tolerance: ±5.26%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.8 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 27 V
на замовлення 9969 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 31.12 грн |
13+ | 23.53 грн |
100+ | 14.09 грн |
500+ | 12.25 грн |
1000+ | 8.33 грн |
PDZVTR36B |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 38V 1W PMDTM
Packaging: Cut Tape (CT)
Tolerance: ±5.26%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 38 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 27 V
Description: DIODE ZENER 38V 1W PMDTM
Packaging: Cut Tape (CT)
Tolerance: ±5.26%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 38 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 27 V
на замовлення 4044 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 28.79 грн |
15+ | 21.28 грн |
100+ | 12.78 грн |
500+ | 11.11 грн |
1000+ | 7.55 грн |
PDZVTR4.3B |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 4.55V 1W PMDTM
Packaging: Cut Tape (CT)
Tolerance: ±5.49%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.55 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Description: DIODE ZENER 4.55V 1W PMDTM
Packaging: Cut Tape (CT)
Tolerance: ±5.49%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.55 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
на замовлення 3254 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 31.9 грн |
13+ | 23.6 грн |
100+ | 14.15 грн |
500+ | 12.29 грн |
1000+ | 8.36 грн |
PDZVTR4.7B |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 4.95V 1W PMDTM
Description: DIODE ZENER 4.95V 1W PMDTM
на замовлення 27 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 37.35 грн |
11+ | 28.62 грн |
PDZVTR43A |
Виробник: Rohm Semiconductor
Description: ZENER DIODE
Description: ZENER DIODE
на замовлення 2978 шт:
термін постачання 21-31 дні (днів)PDZVTR5.1B |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 5.1V 1W PMDTM
Packaging: Cut Tape (CT)
Tolerance: ±5.88%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Description: DIODE ZENER 5.1V 1W PMDTM
Packaging: Cut Tape (CT)
Tolerance: ±5.88%
Package / Case: SOD-128
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: PMDTM
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
на замовлення 11144 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 31.12 грн |
13+ | 23.38 грн |
100+ | 14 грн |
500+ | 12.17 грн |
1000+ | 8.28 грн |
PDZVTR5.6A |
Виробник: Rohm Semiconductor
Description: ZENER DIODE
Description: ZENER DIODE
на замовлення 3474 шт:
термін постачання 21-31 дні (днів)PDZVTR6.8B |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 7.25V 1W PMDTM
Description: DIODE ZENER 7.25V 1W PMDTM
на замовлення 3292 шт:
термін постачання 21-31 дні (днів)RB050LAM-60TR |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 3A PMDTM
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Description: DIODE SCHOTTKY 60V 3A PMDTM
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
на замовлення 25894 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 33.46 грн |
12+ | 25.1 грн |
100+ | 15.06 грн |
500+ | 13.08 грн |
1000+ | 8.9 грн |