Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (99380) > Сторінка 478 з 1657
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
BU4945G-TR | Rohm Semiconductor | Description: IC SUPERVISOR 1 CHANNEL 5SSOP |
товар відсутній |
||||||||||
BU4946F-TR | Rohm Semiconductor | Description: IC VOLT DETECTOR STD 4-SOP |
товар відсутній |
||||||||||
BU4946FVE-TR | Rohm Semiconductor | Description: IC VOLT DETECTOR STD 5-VSOF |
товар відсутній |
||||||||||
BU4946G-TR | Rohm Semiconductor | Description: IC VOLT DETECTOR STD 5-SSOP |
товар відсутній |
||||||||||
BU4947F-TR | Rohm Semiconductor | Description: IC VOLT DETECTOR STD 4-SOP |
товар відсутній |
||||||||||
BU4947FVE-TR | Rohm Semiconductor | Description: IC VOLT DETECTOR STD 5-VSOF |
товар відсутній |
||||||||||
BU4947G-TR | Rohm Semiconductor | Description: IC VOLT DETECTOR STD 5-SSOP |
товар відсутній |
||||||||||
BU4948F-TR | Rohm Semiconductor | Description: IC VOLT DETECTOR STD 4-SOP |
товар відсутній |
||||||||||
BU4948FVE-TR | Rohm Semiconductor | Description: IC VOLT DETECTOR STD 5-VSOF |
товар відсутній |
||||||||||
BU4948G-TR | Rohm Semiconductor | Description: IC SUPERVISOR 1 CHANNEL 5SSOP |
товар відсутній |
||||||||||
BU52012NVX-TR | Rohm Semiconductor | Description: IC DETECTION HALL UNIPO 4-SSON |
товар відсутній |
||||||||||
BU52053NVX-TR | Rohm Semiconductor |
Description: MAGNETIC SWITCH OMNIPOLAR 4SS0N Packaging: Tape & Reel (TR) Package / Case: 4-UDFN Exposed Pad Output Type: Push-Pull Polarization: North Pole, South Pole Mounting Type: Surface Mount Function: Omnipolar Switch Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Technology: Hall Effect Sensing Range: ±5mT Trip, ±0.6mT Release Current - Output (Max): 500µA Current - Supply (Max): 8µA Supplier Device Package: SSON004X1216 Test Condition: 25°C |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||
BU52054GWZ-E2 | Rohm Semiconductor | Description: MAGNETIC SWITCH OMNIPOL UCSP35L1 |
товар відсутній |
||||||||||
BU52055GWZ-E2 | Rohm Semiconductor | Description: MAGNETIC SWITCH OMNIPOL UCSP35L1 |
товар відсутній |
||||||||||
BU52056NVX-TR | Rohm Semiconductor |
Description: MAGNETIC SWITCH OMNIPOLAR 4SS0N Packaging: Tape & Reel (TR) Package / Case: 4-UDFN Exposed Pad Output Type: Push-Pull Polarization: North Pole, South Pole Mounting Type: Surface Mount Function: Omnipolar Switch Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Technology: Hall Effect Sensing Range: ±6.4mT Trip, ±2mT Release Current - Output (Max): 500µA Current - Supply (Max): 8µA Supplier Device Package: SSON004X1216 Test Condition: 25°C |
товар відсутній |
||||||||||
BU52061NVX-TR | Rohm Semiconductor |
Description: MAGNETIC SWITCH OMNIPOLAR 4SS0N Packaging: Tape & Reel (TR) Package / Case: 4-UDFN Exposed Pad Output Type: Push-Pull Polarization: North Pole, South Pole Mounting Type: Surface Mount Function: Omnipolar Switch Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Technology: Hall Effect Sensing Range: ±4.7mT Trip, ±1.2mT Release Current - Output (Max): 500µA Current - Supply (Max): 7µA Supplier Device Package: SSON004X1216 Test Condition: 25°C |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||
BU52742GUL-E2 | Rohm Semiconductor | Description: IC HALL EFFECT BIPO LATCH VCSPL |
товар відсутній |
||||||||||
BU6906NUX-TR | Rohm Semiconductor | Description: IC MOTOR DRIVER PWM VSONX2030 |
товар відсутній |
||||||||||
BU7322HFV-TR | Rohm Semiconductor | Description: IC CLK GENERATOR 1CH 6-HVSOF |
товар відсутній |
||||||||||
BU7421G-TR | Rohm Semiconductor | Description: IC OPAMP GP 90KHZ 5SSOP |
товар відсутній |
||||||||||
BU7485SG-TR | Rohm Semiconductor | Description: IC OPAMP GP 1 CIRCUIT 5SSOP |
товар відсутній |
||||||||||
BU8899GU-E2 | Rohm Semiconductor |
Description: IC SOUND GENERATOR CELL 85VCSP Packaging: Tape & Reel (TR) Package / Case: 48-VFBGA, CSPBGA Mounting Type: Surface Mount Function: Sound Generator Operating Temperature: -30°C ~ 85°C Voltage - Supply: 2.25V ~ 2.75V Current - Supply: 65mA Supplier Device Package: 48-VCSP85H5 (5.14x5.14) Number of Circuits: 1 Power (Watts): 1.6 W |
товар відсутній |
||||||||||
BU8920GU-E2 | Rohm Semiconductor | Description: IC PCM CODEC CELL 85VCSP |
товар відсутній |
||||||||||
DAN202UMTL | Rohm Semiconductor |
Description: DIODE ARRAY GP 80V 100MA UMD3F Packaging: Tape & Reel (TR) Package / Case: SC-85 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: UMD3F Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 70 V |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||
DAN222WMTL | Rohm Semiconductor |
Description: DIODE ARRAY GP 80V 100MA EMD3 Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: EMD3 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 70 V |
товар відсутній |
||||||||||
DAP222WMTL | Rohm Semiconductor |
Description: DIODE ARRAY GP 80V 100MA EMD3 Packaging: Tape & Reel (TR) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: EMD3F Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 70 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||
DTA114EEFRATL | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 50V EMT3 Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V Supplier Device Package: EMT3 Part Status: Active Current - Collector (Ic) (Max): 20 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |
||||||||||
DTA114TEBTL | Rohm Semiconductor | Description: TRANS PREBIAS PNP 150MW EMT3 |
товар відсутній |
||||||||||
DTA114TUBTL | Rohm Semiconductor | Description: TRANS PREBIAS PNP 200MW UMT3 |
товар відсутній |
||||||||||
DTA114YEBTL | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 50V 0.1A EMT3F Packaging: Tape & Reel (TR) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Supplier Device Package: EMT3F (SOT-416FL) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms |
товар відсутній |
||||||||||
DTA115TETL | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 150MW EMT3 Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Supplier Device Package: EMT3 Part Status: Not For New Designs Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 100 kOhms |
товар відсутній |
||||||||||
DTA115TMT2L | Rohm Semiconductor | Description: TRANS PREBIAS PNP 150MW VMT3 |
товар відсутній |
||||||||||
DTA143TEBTL | Rohm Semiconductor | Description: TRANS PREBIAS PNP 150MW EMT3 |
товар відсутній |
||||||||||
DTA143TUBTL | Rohm Semiconductor | Description: TRANS PREBIAS PNP 200MW UMT3 |
товар відсутній |
||||||||||
DTA143XEBTL | Rohm Semiconductor | Description: TRANS PREBIAS PNP 150MW EMT3 |
товар відсутній |
||||||||||
DTB543EMT2L | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 12V 0.5A VMT3 Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 115 @ 100mA, 2V Supplier Device Package: VMT3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 12 V Power - Max: 150 mW Frequency - Transition: 260 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms |
товар відсутній |
||||||||||
DTB543XMT2L | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 12V 0.5A VMT3 Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V Supplier Device Package: VMT3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 12 V Power - Max: 150 mW Frequency - Transition: 260 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms |
товар відсутній |
||||||||||
DTB543ZETL | Rohm Semiconductor |
Description: TRANS PREBIAS PNP 12V 0.5A EMT3 Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V Supplier Device Package: EMT3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 12 V Power - Max: 150 mW Frequency - Transition: 260 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms |
товар відсутній |
||||||||||
DTB713ZETL | Rohm Semiconductor | Description: TRANS PREBIAS PNP 150MW EMT3 |
товар відсутній |
||||||||||
DTB723YMT2L | Rohm Semiconductor | Description: TRANS PREBIAS PNP 150MW VMT3 |
товар відсутній |
||||||||||
DTB743XMT2L | Rohm Semiconductor | Description: TRANS PREBIAS PNP 150MW VMT3 |
товар відсутній |
||||||||||
DTB743ZMT2L | Rohm Semiconductor | Description: TRANS PREBIAS PNP 150MW VMT3 |
товар відсутній |
||||||||||
DTC043ZMT2L | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 100MA VMT3 Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: VMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms |
на замовлення 152000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||
DTC143TUBTL | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 200MW UMT3F Packaging: Tape & Reel (TR) Package / Case: SC-85 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Supplier Device Package: UMT3F Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms |
товар відсутній |
||||||||||
DTC143XEBTL | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.1A EMT3 Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: EMT3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms |
товар відсутній |
||||||||||
DTD523YMT2L | Rohm Semiconductor | Description: TRANS PREBIAS NPN 150MW VMT3 |
товар відсутній |
||||||||||
DTD543EMT2L | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 12V 0.5A VMT3 Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 115 @ 100mA, 2V Supplier Device Package: VMT3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 12 V Power - Max: 150 mW Frequency - Transition: 260 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms |
товар відсутній |
||||||||||
DTD543XETL | Rohm Semiconductor | Description: TRANS PREBIAS NPN 150MW EMT3 |
товар відсутній |
||||||||||
DTD543XMT2L | Rohm Semiconductor | Description: TRANS PREBIAS NPN 150MW VMT3 |
товар відсутній |
||||||||||
DTD543ZMT2L | Rohm Semiconductor | Description: TRANS PREBIAS NPN 150MW VMT3 |
товар відсутній |
||||||||||
DTD713ZETL | Rohm Semiconductor | Description: TRANS PREBIAS NPN 150MW EMT3 |
товар відсутній |
||||||||||
DTD723YETL | Rohm Semiconductor | Description: TRANS PREBIAS NPN 150MW EMT3 |
товар відсутній |
||||||||||
DTD743ZETL | Rohm Semiconductor | Description: TRANS PREBIAS NPN 150MW EMT3 |
товар відсутній |
||||||||||
DTD743ZMT2L | Rohm Semiconductor | Description: TRANS PREBIAS NPN 150MW VMT3 |
товар відсутній |
||||||||||
EDZVT2R10B | Rohm Semiconductor |
Description: DIODE ZENER 10V 150MW EMD2 Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 10 V Impedance (Max) (Zzt): 30 Ohms Supplier Device Package: EMD2 Power - Max: 150 mW Current - Reverse Leakage @ Vr: 100 nA @ 7 V |
на замовлення 40000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||
EDZVT2R11B | Rohm Semiconductor |
Description: DIODE ZENER 11V 150MW EMD2 Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 11 V Impedance (Max) (Zzt): 30 Ohms Supplier Device Package: EMD2 Power - Max: 150 mW Current - Reverse Leakage @ Vr: 100 nA @ 8 V |
товар відсутній |
||||||||||
EDZVT2R12B | Rohm Semiconductor |
Description: DIODE ZENER 12V 150MW EMD2 Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 30 Ohms Supplier Device Package: EMD2 Power - Max: 150 mW Current - Reverse Leakage @ Vr: 100 nA @ 9 V |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||
EDZVT2R13B | Rohm Semiconductor |
Description: DIODE ZENER 13V 150MW EMD2 Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 13 V Impedance (Max) (Zzt): 37 Ohms Supplier Device Package: EMD2 Power - Max: 150 mW Current - Reverse Leakage @ Vr: 100 nA @ 10 V |
товар відсутній |
||||||||||
EDZVT2R15B | Rohm Semiconductor |
Description: DIODE ZENER 15V 150MW EMD2 Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 15 V Impedance (Max) (Zzt): 42 Ohms Supplier Device Package: EMD2 Power - Max: 150 mW Current - Reverse Leakage @ Vr: 100 nA @ 11 V |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||
EDZVT2R16B | Rohm Semiconductor |
Description: DIODE ZENER 16V 150MW EMD2 Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 16 V Impedance (Max) (Zzt): 50 Ohms Supplier Device Package: EMD2 Power - Max: 150 mW Current - Reverse Leakage @ Vr: 100 nA @ 12 V |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
|
BU52012NVX-TR |
Виробник: Rohm Semiconductor
Description: IC DETECTION HALL UNIPO 4-SSON
Description: IC DETECTION HALL UNIPO 4-SSON
товар відсутній
BU52053NVX-TR |
Виробник: Rohm Semiconductor
Description: MAGNETIC SWITCH OMNIPOLAR 4SS0N
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Push-Pull
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: Hall Effect
Sensing Range: ±5mT Trip, ±0.6mT Release
Current - Output (Max): 500µA
Current - Supply (Max): 8µA
Supplier Device Package: SSON004X1216
Test Condition: 25°C
Description: MAGNETIC SWITCH OMNIPOLAR 4SS0N
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Push-Pull
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: Hall Effect
Sensing Range: ±5mT Trip, ±0.6mT Release
Current - Output (Max): 500µA
Current - Supply (Max): 8µA
Supplier Device Package: SSON004X1216
Test Condition: 25°C
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5000+ | 29.39 грн |
BU52054GWZ-E2 |
Виробник: Rohm Semiconductor
Description: MAGNETIC SWITCH OMNIPOL UCSP35L1
Description: MAGNETIC SWITCH OMNIPOL UCSP35L1
товар відсутній
BU52055GWZ-E2 |
Виробник: Rohm Semiconductor
Description: MAGNETIC SWITCH OMNIPOL UCSP35L1
Description: MAGNETIC SWITCH OMNIPOL UCSP35L1
товар відсутній
BU52056NVX-TR |
Виробник: Rohm Semiconductor
Description: MAGNETIC SWITCH OMNIPOLAR 4SS0N
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Push-Pull
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: Hall Effect
Sensing Range: ±6.4mT Trip, ±2mT Release
Current - Output (Max): 500µA
Current - Supply (Max): 8µA
Supplier Device Package: SSON004X1216
Test Condition: 25°C
Description: MAGNETIC SWITCH OMNIPOLAR 4SS0N
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Push-Pull
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: Hall Effect
Sensing Range: ±6.4mT Trip, ±2mT Release
Current - Output (Max): 500µA
Current - Supply (Max): 8µA
Supplier Device Package: SSON004X1216
Test Condition: 25°C
товар відсутній
BU52061NVX-TR |
Виробник: Rohm Semiconductor
Description: MAGNETIC SWITCH OMNIPOLAR 4SS0N
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Push-Pull
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: Hall Effect
Sensing Range: ±4.7mT Trip, ±1.2mT Release
Current - Output (Max): 500µA
Current - Supply (Max): 7µA
Supplier Device Package: SSON004X1216
Test Condition: 25°C
Description: MAGNETIC SWITCH OMNIPOLAR 4SS0N
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Push-Pull
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: Hall Effect
Sensing Range: ±4.7mT Trip, ±1.2mT Release
Current - Output (Max): 500µA
Current - Supply (Max): 7µA
Supplier Device Package: SSON004X1216
Test Condition: 25°C
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5000+ | 21.12 грн |
BU52742GUL-E2 |
Виробник: Rohm Semiconductor
Description: IC HALL EFFECT BIPO LATCH VCSPL
Description: IC HALL EFFECT BIPO LATCH VCSPL
товар відсутній
BU8899GU-E2 |
Виробник: Rohm Semiconductor
Description: IC SOUND GENERATOR CELL 85VCSP
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA, CSPBGA
Mounting Type: Surface Mount
Function: Sound Generator
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.25V ~ 2.75V
Current - Supply: 65mA
Supplier Device Package: 48-VCSP85H5 (5.14x5.14)
Number of Circuits: 1
Power (Watts): 1.6 W
Description: IC SOUND GENERATOR CELL 85VCSP
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA, CSPBGA
Mounting Type: Surface Mount
Function: Sound Generator
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.25V ~ 2.75V
Current - Supply: 65mA
Supplier Device Package: 48-VCSP85H5 (5.14x5.14)
Number of Circuits: 1
Power (Watts): 1.6 W
товар відсутній
DAN202UMTL |
Виробник: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 100MA UMD3F
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: UMD3F
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Description: DIODE ARRAY GP 80V 100MA UMD3F
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: UMD3F
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 3.27 грн |
6000+ | 2.92 грн |
9000+ | 2.42 грн |
DAN222WMTL |
Виробник: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 100MA EMD3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: EMD3
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Description: DIODE ARRAY GP 80V 100MA EMD3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: EMD3
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
товар відсутній
DAP222WMTL |
Виробник: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 100MA EMD3
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: EMD3F
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Description: DIODE ARRAY GP 80V 100MA EMD3
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: EMD3F
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 4.16 грн |
DTA114EEFRATL |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 20 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS PNP 50V EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 20 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
DTA114YEBTL |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A EMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: EMT3F (SOT-416FL)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS PNP 50V 0.1A EMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: EMT3F (SOT-416FL)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
товар відсутній
DTA115TETL |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 150MW EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: EMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 100 kOhms
Description: TRANS PREBIAS PNP 150MW EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: EMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 100 kOhms
товар відсутній
DTB543EMT2L |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 12V 0.5A VMT3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 115 @ 100mA, 2V
Supplier Device Package: VMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
Frequency - Transition: 260 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Description: TRANS PREBIAS PNP 12V 0.5A VMT3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 115 @ 100mA, 2V
Supplier Device Package: VMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
Frequency - Transition: 260 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
товар відсутній
DTB543XMT2L |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 12V 0.5A VMT3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Supplier Device Package: VMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
Frequency - Transition: 260 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Description: TRANS PREBIAS PNP 12V 0.5A VMT3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Supplier Device Package: VMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
Frequency - Transition: 260 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
товар відсутній
DTB543ZETL |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS PNP 12V 0.5A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Supplier Device Package: EMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
Frequency - Transition: 260 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS PNP 12V 0.5A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Supplier Device Package: EMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
Frequency - Transition: 260 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
товар відсутній
DTC043ZMT2L |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 100MA VMT3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: VMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS NPN 50V 100MA VMT3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: VMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
на замовлення 152000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8000+ | 3.27 грн |
16000+ | 2.67 грн |
24000+ | 2.52 грн |
56000+ | 2.21 грн |
DTC143TUBTL |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 200MW UMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: UMT3F
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Description: TRANS PREBIAS NPN 200MW UMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: UMT3F
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
товар відсутній
DTC143XEBTL |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: EMT3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Description: TRANS PREBIAS NPN 50V 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: EMT3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
товар відсутній
DTD543EMT2L |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 12V 0.5A VMT3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 115 @ 100mA, 2V
Supplier Device Package: VMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
Frequency - Transition: 260 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Description: TRANS PREBIAS NPN 12V 0.5A VMT3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 115 @ 100mA, 2V
Supplier Device Package: VMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
Frequency - Transition: 260 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
товар відсутній
EDZVT2R10B |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 10V 150MW EMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: EMD2
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 100 nA @ 7 V
Description: DIODE ZENER 10V 150MW EMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: EMD2
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 100 nA @ 7 V
на замовлення 40000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8000+ | 3.11 грн |
16000+ | 2.48 грн |
24000+ | 2.44 грн |
EDZVT2R11B |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 11V 150MW EMD2
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: EMD2
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Description: DIODE ZENER 11V 150MW EMD2
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: EMD2
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
товар відсутній
EDZVT2R12B |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 12V 150MW EMD2
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: EMD2
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 100 nA @ 9 V
Description: DIODE ZENER 12V 150MW EMD2
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: EMD2
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 100 nA @ 9 V
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8000+ | 3.11 грн |
EDZVT2R13B |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 13V 150MW EMD2
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 37 Ohms
Supplier Device Package: EMD2
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
Description: DIODE ZENER 13V 150MW EMD2
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 37 Ohms
Supplier Device Package: EMD2
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
товар відсутній
EDZVT2R15B |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 15V 150MW EMD2
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 42 Ohms
Supplier Device Package: EMD2
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Description: DIODE ZENER 15V 150MW EMD2
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 42 Ohms
Supplier Device Package: EMD2
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8000+ | 2.26 грн |
16000+ | 1.87 грн |
EDZVT2R16B |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 16V 150MW EMD2
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: EMD2
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Description: DIODE ZENER 16V 150MW EMD2
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: EMD2
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8000+ | 2.18 грн |