Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (100331) > Сторінка 466 з 1673
Фото | Назва | Виробник | Інформація |
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RFN5B6STL | Rohm Semiconductor | Description: DIODE GEN PURP 600V 5A CPD |
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RLZTE-112.0B | Rohm Semiconductor | Description: DIODE ZENER 2V 500MW LL34 |
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RLZTE-113.0B | Rohm Semiconductor |
Description: DIODE ZENER 500MW 3V LL-34 Packaging: Tape & Reel (TR) Part Status: Obsolete |
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RLZTE-113.3B | Rohm Semiconductor |
Description: DIODE ZENER 500MW 3.3V LL-34 Packaging: Tape & Reel (TR) Part Status: Obsolete |
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RPM5538-H14E2 | Rohm Semiconductor |
Description: SENSOR REMOTE REC 37.9KHZ 12M Packaging: Tape & Reel (TR) Sensing Distance: 12m Orientation: Side View Operating Temperature: -10°C ~ 75°C B.P.F. Center Frequency: 37.9kHz Current - Supply: 1.5 mA Voltage - Supply: 4.5 V ~ 5.5 V |
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RPM841-H11E2 | Rohm Semiconductor |
Description: IC IRDA IR COMMUNICATION MODULE Packaging: Tape & Reel (TR) Orientation: Side View Operating Temperature: -30°C ~ 85°C Size: 6.80mm x 2.44mm x 1.70mm Data Rate: 115.2kbs (SIR) Standards: IrDA 1.2 Link Range, Low Power: 20cm, 60cm Voltage - Supply: 2.4 V ~ 3.6 V Idle Current, Typ @ 25°C: 90 µA |
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RPM872-E4 | Rohm Semiconductor |
Description: IC IRDA IR COMMUNICATION MODULE Packaging: Tape & Reel (TR) Orientation: Top View Operating Temperature: -20°C ~ 85°C Size: 7.60mm x 2.72mm x 2.00mm Data Rate: 115.2kbs (SIR) Standards: IrDA 1.2 Link Range, Low Power: 20cm, 60cm Voltage - Supply: 2 V ~ 3.6 V Idle Current, Typ @ 25°C: 75 µA |
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RPM873-E4 | Rohm Semiconductor | Description: IC IRDA IR COMMUNICATION MODULE |
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RPM882-E4 | Rohm Semiconductor | Description: IC IRDA IR COMMUNICATION MODULE |
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RPM882-H7E2 | Rohm Semiconductor | Description: IC IRDA IR COMMUNICATION MODULE |
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RPM922-H11E2A | Rohm Semiconductor |
Description: IC IRDA IR COMMUNICATION MODULE Packaging: Tape & Reel (TR) Orientation: Side View Operating Temperature: -30°C ~ 85°C Size: 6.80mm x 2.29mm x 1.70mm Data Rate: 115.2kbs (SIR) Standards: IrDA 1.3 Link Range, Low Power: 20cm, 60cm Voltage - Supply: 2.4 V ~ 3.6 V Idle Current, Typ @ 25°C: 900 µA |
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RPM960-H14E3 | Rohm Semiconductor | Description: IC IRDA IR COMMUNICATION MODULE |
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RPMS1371-H19E4AV | Rohm Semiconductor | Description: IC RCVR MODULE REMOTE CTRL SMD |
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RPMS1401-H19E4AV | Rohm Semiconductor | Description: IC RCVR MODULE REMOTE CTRL SMD |
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RPMS2001-H19E2A | Rohm Semiconductor |
Description: SENSOR REMOTE REC 36.7KHZ 8M Packaging: Tape & Reel (TR) Sensing Distance: 8m Operating Temperature: -30°C ~ 85°C (TA) B.P.F. Center Frequency: 36.7kHz Current - Supply: 950 µA Voltage - Supply: 4.5 V ~ 5.5 V |
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RPMS2371-H19E4AV | Rohm Semiconductor | Description: IC RCVR MODULE REMOTE CTRL SMD |
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RS1G180MNTB | Rohm Semiconductor |
Description: MOSFET N-CH 40V 18A/80A 8HSOP Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 18A, 10V Power Dissipation (Max): 3W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1293 pF @ 20 V |
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RSD045P05TL | Rohm Semiconductor |
Description: MOSFET P-CH 45V CPT3 Packaging: Tape & Reel (TR) Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) |
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RSD080N06TL | Rohm Semiconductor |
Description: MOSFET N-CH 60V 8A CPT3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 8A, 10V Power Dissipation (Max): 15W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: CPT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 10 V |
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RSD080P05TL | Rohm Semiconductor | Description: MOSFET P-CH 45V 8A CPT3 |
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RSD100N10TL | Rohm Semiconductor |
Description: MOSFET N-CH 100V 10A CPT3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 133mOhm @ 5A, 10V Power Dissipation (Max): 20W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: CPT3 Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V |
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RSD131P10TL | Rohm Semiconductor | Description: MOSFET P-CH 100V 13A CPT3 |
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RSD140P06TL | Rohm Semiconductor |
Description: MOSFET P-CH 60V 14A CPT3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Rds On (Max) @ Id, Vgs: 84mOhm @ 14A, 10V Power Dissipation (Max): 20W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: CPT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 10 V |
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RSD150N06TL | Rohm Semiconductor |
Description: MOSFET N-CH 60V 15A CPT3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 15A, 10V Power Dissipation (Max): 20W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: CPT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V |
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RSD221N06TL | Rohm Semiconductor |
Description: MOSFET N-CH 60V 22A CPT3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 22A, 10V Power Dissipation (Max): 850mW (Ta), 20W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: CPT3 Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 10 V |
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RSJ300N10TL | Rohm Semiconductor | Description: MOSFET N-CH 100V 30A LPTS |
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RSY500N04FRATL | Rohm Semiconductor |
Description: MOSFET N-CH 40V 50A TCPT3 Packaging: Tape & Reel (TR) Part Status: Obsolete |
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RXH125N03TB1 | Rohm Semiconductor |
Description: MOSFET N-CH 30V 12.5A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta) Rds On (Max) @ Id, Vgs: 12mOhm @ 12.5A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V |
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SH8K12TB1 | Rohm Semiconductor | Description: MOSFET 2N-CH 30V 5A 8SOP |
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SH8K15TB1 | Rohm Semiconductor | Description: MOSFET 2N-CH 30V 9A 8SOP |
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SH8M11TB1 | Rohm Semiconductor | Description: MOSFET N/P-CH 30V 3.5A 8SOP |
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SH8M12TB1 | Rohm Semiconductor | Description: MOSFET N/P-CH 30V 5A/4.5A SOP8 |
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SH8M14TB1 | Rohm Semiconductor | Description: MOSFET N/P-CH 30V 9A/7A SOP |
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SMLK19WBEDW1 | Rohm Semiconductor | Description: LED WHITE DIFFUSED 4520 SMD |
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SP8M70TB1 | Rohm Semiconductor | Description: MOSFET N/P-CH 250V 3A/2.5A 8SOIC |
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ZDS020N60TB | Rohm Semiconductor |
Description: MOSFET N-CH 600V 630MA 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 630mA (Tc) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Power Dissipation (Max): 2W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: 8-SOP Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 10 V |
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1SR159-200TE25 | Rohm Semiconductor | Description: DIODE GEN PURP 200V 1A PMDS |
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1SS400CST2RA | Rohm Semiconductor |
Description: DIODE GEN PURP 80V 100MA VMN2 Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 3pF @ 0.5V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: VMN2 (SOD-923) Operating Temperature - Junction: 150°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 80 V |
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1SS400SMT2R | Rohm Semiconductor |
Description: DIODE GEN PURP 80V 100MA EMD2 Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 3pF @ 0.5V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: EMD2 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 80 V |
на замовлення 944000 шт: термін постачання 21-31 дні (днів) |
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2SA1576UBTLR | Rohm Semiconductor |
Description: TRANS PNP 50V 0.15A UMT3F Packaging: Tape & Reel (TR) Package / Case: SC-85 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Frequency - Transition: 140MHz Supplier Device Package: UMT3F Part Status: Not For New Designs Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW |
на замовлення 93000 шт: термін постачання 21-31 дні (днів) |
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2SAR522UBTL | Rohm Semiconductor | Description: TRANS PNP 20V 0.2A UMT3F |
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2SAR523UBTL | Rohm Semiconductor | Description: TRANS PNP 50V 0.1A UMT3FM |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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2SC4081UBTLR | Rohm Semiconductor |
Description: TRANS NPN 50V 0.15A UMT3F Packaging: Tape & Reel (TR) Package / Case: SC-85 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Frequency - Transition: 180MHz Supplier Device Package: UMT3F Part Status: Not For New Designs Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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2SC4617EBTLP | Rohm Semiconductor |
Description: TRANS NPN 50V 0.15A EMT3F Packaging: Tape & Reel (TR) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Frequency - Transition: 180MHz Supplier Device Package: EMT3F (SOT-416FL) Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW |
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2SC4617EBTLQ | Rohm Semiconductor |
Description: TRANS NPN 50V 0.15A EMT3F Packaging: Tape & Reel (TR) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Frequency - Transition: 180MHz Supplier Device Package: EMT3F (SOT-416FL) Part Status: Not For New Designs Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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2SC4617EBTLR | Rohm Semiconductor |
Description: TRANS NPN 50V 0.15A EMT3F Packaging: Tape & Reel (TR) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Frequency - Transition: 180MHz Supplier Device Package: EMT3F (SOT-416FL) Part Status: Not For New Designs Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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2SC4617EBTLS | Rohm Semiconductor |
Description: TRANS NPN 50V 0.15A EMT3F Packaging: Tape & Reel (TR) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Frequency - Transition: 180MHz Supplier Device Package: EMT3F (SOT-416FL) Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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2SCR522UBTL | Rohm Semiconductor |
Description: TRANS NPN 20V 0.2A UMT3F Packaging: Tape & Reel (TR) Package / Case: SC-85 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 2V Frequency - Transition: 400MHz Supplier Device Package: UMT3F Part Status: Active Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 200 mW |
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2SCR523UBTL | Rohm Semiconductor |
Description: TRANS NPN 50V 0.1A UMT3F Packaging: Tape & Reel (TR) Package / Case: SC-85 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Frequency - Transition: 350MHz Supplier Device Package: UMT3F Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
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2SD2153T100W | Rohm Semiconductor |
Description: TRANS NPN 25V 2A MPT3 Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 20mA, 1A Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 1200 @ 500mA, 6V Frequency - Transition: 110MHz Supplier Device Package: MPT3 Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 2 W |
на замовлення 3920 шт: термін постачання 21-31 дні (днів) |
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2SD2679T100 | Rohm Semiconductor | Description: TRANS NPN 30V 2A MPT3 |
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BA8391G-TR | Rohm Semiconductor | Description: IC COMPARATOR OPEN 5-SSOP |
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BCX70KT116 | Rohm Semiconductor |
Description: TRANS NPN 45V 0.2A SST3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V Frequency - Transition: 125MHz Supplier Device Package: SST3 Part Status: Not For New Designs Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 350 mW |
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BCX70KT216 | Rohm Semiconductor |
Description: TRANS NPN 45V 0.2A SST3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V Frequency - Transition: 125MHz Supplier Device Package: SST3 Part Status: Not For New Designs Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 350 mW |
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BCX71HT116 | Rohm Semiconductor |
Description: TRANS PNP 45V 0.2A SST3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 5V Frequency - Transition: 180MHz Supplier Device Package: SST3 Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 350 mW |
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BCX71HT216 | Rohm Semiconductor |
Description: TRANS PNP 45V 0.2A SST3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 5V Frequency - Transition: 180MHz Supplier Device Package: SST3 Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 350 mW |
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BD10IC0WHFV-GTR | Rohm Semiconductor |
Description: IC REG LINEAR 1V 1A 6HVSOF Packaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: -25°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 0.25 mA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 6-HVSOF Voltage - Output (Min/Fixed): 1V Control Features: Enable Voltage Dropout (Max): 0.6V @ 1A Protection Features: Over Current, Over Temperature, Soft Start Current - Supply (Max): 500 µA |
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BD11600NUX-E2 | Rohm Semiconductor |
Description: IC USB SWITCH DPDT 10-VSON Packaging: Tape & Reel (TR) Features: USB 2.0 Package / Case: 10-UFDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Applications: USB On-State Resistance (Max): 6Ohm Supplier Device Package: VSON010X3020 Voltage - Supply, Single (V+): 2.5V ~ 5.5V Switch Circuit: DPDT Part Status: Active Number of Channels: 1 |
на замовлення 28000 шт: термін постачання 21-31 дні (днів) |
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BD1204GWL-E2 | Rohm Semiconductor | Description: IC LED DRIVER RGLTR DIM UCSP50L1 |
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BD1206GUL-E2 | Rohm Semiconductor | Description: IC LED DRIVER RGLTR DIM VCSP50L2 |
товар відсутній |
RLZTE-113.0B |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 500MW 3V LL-34
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Description: DIODE ZENER 500MW 3V LL-34
Packaging: Tape & Reel (TR)
Part Status: Obsolete
товар відсутній
RLZTE-113.3B |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 500MW 3.3V LL-34
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Description: DIODE ZENER 500MW 3.3V LL-34
Packaging: Tape & Reel (TR)
Part Status: Obsolete
товар відсутній
RPM5538-H14E2 |
Виробник: Rohm Semiconductor
Description: SENSOR REMOTE REC 37.9KHZ 12M
Packaging: Tape & Reel (TR)
Sensing Distance: 12m
Orientation: Side View
Operating Temperature: -10°C ~ 75°C
B.P.F. Center Frequency: 37.9kHz
Current - Supply: 1.5 mA
Voltage - Supply: 4.5 V ~ 5.5 V
Description: SENSOR REMOTE REC 37.9KHZ 12M
Packaging: Tape & Reel (TR)
Sensing Distance: 12m
Orientation: Side View
Operating Temperature: -10°C ~ 75°C
B.P.F. Center Frequency: 37.9kHz
Current - Supply: 1.5 mA
Voltage - Supply: 4.5 V ~ 5.5 V
товар відсутній
RPM841-H11E2 |
Виробник: Rohm Semiconductor
Description: IC IRDA IR COMMUNICATION MODULE
Packaging: Tape & Reel (TR)
Orientation: Side View
Operating Temperature: -30°C ~ 85°C
Size: 6.80mm x 2.44mm x 1.70mm
Data Rate: 115.2kbs (SIR)
Standards: IrDA 1.2
Link Range, Low Power: 20cm, 60cm
Voltage - Supply: 2.4 V ~ 3.6 V
Idle Current, Typ @ 25°C: 90 µA
Description: IC IRDA IR COMMUNICATION MODULE
Packaging: Tape & Reel (TR)
Orientation: Side View
Operating Temperature: -30°C ~ 85°C
Size: 6.80mm x 2.44mm x 1.70mm
Data Rate: 115.2kbs (SIR)
Standards: IrDA 1.2
Link Range, Low Power: 20cm, 60cm
Voltage - Supply: 2.4 V ~ 3.6 V
Idle Current, Typ @ 25°C: 90 µA
товар відсутній
RPM872-E4 |
Виробник: Rohm Semiconductor
Description: IC IRDA IR COMMUNICATION MODULE
Packaging: Tape & Reel (TR)
Orientation: Top View
Operating Temperature: -20°C ~ 85°C
Size: 7.60mm x 2.72mm x 2.00mm
Data Rate: 115.2kbs (SIR)
Standards: IrDA 1.2
Link Range, Low Power: 20cm, 60cm
Voltage - Supply: 2 V ~ 3.6 V
Idle Current, Typ @ 25°C: 75 µA
Description: IC IRDA IR COMMUNICATION MODULE
Packaging: Tape & Reel (TR)
Orientation: Top View
Operating Temperature: -20°C ~ 85°C
Size: 7.60mm x 2.72mm x 2.00mm
Data Rate: 115.2kbs (SIR)
Standards: IrDA 1.2
Link Range, Low Power: 20cm, 60cm
Voltage - Supply: 2 V ~ 3.6 V
Idle Current, Typ @ 25°C: 75 µA
товар відсутній
RPM882-H7E2 |
Виробник: Rohm Semiconductor
Description: IC IRDA IR COMMUNICATION MODULE
Description: IC IRDA IR COMMUNICATION MODULE
товар відсутній
RPM922-H11E2A |
Виробник: Rohm Semiconductor
Description: IC IRDA IR COMMUNICATION MODULE
Packaging: Tape & Reel (TR)
Orientation: Side View
Operating Temperature: -30°C ~ 85°C
Size: 6.80mm x 2.29mm x 1.70mm
Data Rate: 115.2kbs (SIR)
Standards: IrDA 1.3
Link Range, Low Power: 20cm, 60cm
Voltage - Supply: 2.4 V ~ 3.6 V
Idle Current, Typ @ 25°C: 900 µA
Description: IC IRDA IR COMMUNICATION MODULE
Packaging: Tape & Reel (TR)
Orientation: Side View
Operating Temperature: -30°C ~ 85°C
Size: 6.80mm x 2.29mm x 1.70mm
Data Rate: 115.2kbs (SIR)
Standards: IrDA 1.3
Link Range, Low Power: 20cm, 60cm
Voltage - Supply: 2.4 V ~ 3.6 V
Idle Current, Typ @ 25°C: 900 µA
товар відсутній
RPM960-H14E3 |
Виробник: Rohm Semiconductor
Description: IC IRDA IR COMMUNICATION MODULE
Description: IC IRDA IR COMMUNICATION MODULE
товар відсутній
RPMS1371-H19E4AV |
Виробник: Rohm Semiconductor
Description: IC RCVR MODULE REMOTE CTRL SMD
Description: IC RCVR MODULE REMOTE CTRL SMD
товар відсутній
RPMS1401-H19E4AV |
Виробник: Rohm Semiconductor
Description: IC RCVR MODULE REMOTE CTRL SMD
Description: IC RCVR MODULE REMOTE CTRL SMD
товар відсутній
RPMS2001-H19E2A |
Виробник: Rohm Semiconductor
Description: SENSOR REMOTE REC 36.7KHZ 8M
Packaging: Tape & Reel (TR)
Sensing Distance: 8m
Operating Temperature: -30°C ~ 85°C (TA)
B.P.F. Center Frequency: 36.7kHz
Current - Supply: 950 µA
Voltage - Supply: 4.5 V ~ 5.5 V
Description: SENSOR REMOTE REC 36.7KHZ 8M
Packaging: Tape & Reel (TR)
Sensing Distance: 8m
Operating Temperature: -30°C ~ 85°C (TA)
B.P.F. Center Frequency: 36.7kHz
Current - Supply: 950 µA
Voltage - Supply: 4.5 V ~ 5.5 V
товар відсутній
RPMS2371-H19E4AV |
Виробник: Rohm Semiconductor
Description: IC RCVR MODULE REMOTE CTRL SMD
Description: IC RCVR MODULE REMOTE CTRL SMD
товар відсутній
RS1G180MNTB |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 40V 18A/80A 8HSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 18A, 10V
Power Dissipation (Max): 3W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1293 pF @ 20 V
Description: MOSFET N-CH 40V 18A/80A 8HSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 18A, 10V
Power Dissipation (Max): 3W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1293 pF @ 20 V
товар відсутній
RSD045P05TL |
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 45V CPT3
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Description: MOSFET P-CH 45V CPT3
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
товар відсутній
RSD080N06TL |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 60V 8A CPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 8A, 10V
Power Dissipation (Max): 15W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: CPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 10 V
Description: MOSFET N-CH 60V 8A CPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 8A, 10V
Power Dissipation (Max): 15W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: CPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 10 V
товар відсутній
RSD100N10TL |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 100V 10A CPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 133mOhm @ 5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: CPT3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Description: MOSFET N-CH 100V 10A CPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 133mOhm @ 5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: CPT3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
товар відсутній
RSD140P06TL |
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 60V 14A CPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 84mOhm @ 14A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: CPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 10 V
Description: MOSFET P-CH 60V 14A CPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 84mOhm @ 14A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: CPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 10 V
товар відсутній
RSD150N06TL |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 60V 15A CPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 15A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: CPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V
Description: MOSFET N-CH 60V 15A CPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 15A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: CPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V
товар відсутній
RSD221N06TL |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 60V 22A CPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 22A, 10V
Power Dissipation (Max): 850mW (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: CPT3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 10 V
Description: MOSFET N-CH 60V 22A CPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 22A, 10V
Power Dissipation (Max): 850mW (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: CPT3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 10 V
товар відсутній
RSY500N04FRATL |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 40V 50A TCPT3
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Description: MOSFET N-CH 40V 50A TCPT3
Packaging: Tape & Reel (TR)
Part Status: Obsolete
товар відсутній
RXH125N03TB1 |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 12.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 12.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
Description: MOSFET N-CH 30V 12.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 12.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
товар відсутній
ZDS020N60TB |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 630MA 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 630mA (Tc)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 10 V
Description: MOSFET N-CH 600V 630MA 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 630mA (Tc)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 10 V
товар відсутній
1SS400CST2RA |
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 80V 100MA VMN2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0.5V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: VMN2 (SOD-923)
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
Description: DIODE GEN PURP 80V 100MA VMN2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0.5V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: VMN2 (SOD-923)
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
товар відсутній
1SS400SMT2R |
Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 80V 100MA EMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0.5V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: EMD2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
Description: DIODE GEN PURP 80V 100MA EMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0.5V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: EMD2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
на замовлення 944000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8000+ | 1.79 грн |
16000+ | 1.55 грн |
24000+ | 1.51 грн |
2SA1576UBTLR |
Виробник: Rohm Semiconductor
Description: TRANS PNP 50V 0.15A UMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: UMT3F
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Description: TRANS PNP 50V 0.15A UMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: UMT3F
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
на замовлення 93000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 2.82 грн |
6000+ | 2.42 грн |
9000+ | 2.28 грн |
15000+ | 1.98 грн |
21000+ | 1.89 грн |
30000+ | 1.8 грн |
75000+ | 1.57 грн |
2SAR523UBTL |
Виробник: Rohm Semiconductor
Description: TRANS PNP 50V 0.1A UMT3FM
Description: TRANS PNP 50V 0.1A UMT3FM
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)2SC4081UBTLR |
Виробник: Rohm Semiconductor
Description: TRANS NPN 50V 0.15A UMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: UMT3F
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Description: TRANS NPN 50V 0.15A UMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: UMT3F
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 2.76 грн |
6000+ | 2.47 грн |
9000+ | 2.05 грн |
2SC4617EBTLP |
Виробник: Rohm Semiconductor
Description: TRANS NPN 50V 0.15A EMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: EMT3F (SOT-416FL)
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Description: TRANS NPN 50V 0.15A EMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: EMT3F (SOT-416FL)
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
товар відсутній
2SC4617EBTLQ |
Виробник: Rohm Semiconductor
Description: TRANS NPN 50V 0.15A EMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Description: TRANS NPN 50V 0.15A EMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 3.1 грн |
2SC4617EBTLR |
Виробник: Rohm Semiconductor
Description: TRANS NPN 50V 0.15A EMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Description: TRANS NPN 50V 0.15A EMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 3.1 грн |
2SC4617EBTLS |
Виробник: Rohm Semiconductor
Description: TRANS NPN 50V 0.15A EMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Description: TRANS NPN 50V 0.15A EMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 3.1 грн |
2SCR522UBTL |
Виробник: Rohm Semiconductor
Description: TRANS NPN 20V 0.2A UMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: UMT3F
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 200 mW
Description: TRANS NPN 20V 0.2A UMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: UMT3F
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 200 mW
товар відсутній
2SCR523UBTL |
Виробник: Rohm Semiconductor
Description: TRANS NPN 50V 0.1A UMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 350MHz
Supplier Device Package: UMT3F
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Description: TRANS NPN 50V 0.1A UMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 350MHz
Supplier Device Package: UMT3F
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 2.52 грн |
6000+ | 2.3 грн |
9000+ | 1.96 грн |
2SD2153T100W |
Виробник: Rohm Semiconductor
Description: TRANS NPN 25V 2A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 20mA, 1A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 1200 @ 500mA, 6V
Frequency - Transition: 110MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 2 W
Description: TRANS NPN 25V 2A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 20mA, 1A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 1200 @ 500mA, 6V
Frequency - Transition: 110MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 2 W
на замовлення 3920 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1000+ | 19.43 грн |
2000+ | 16.66 грн |
BCX70KT116 |
Виробник: Rohm Semiconductor
Description: TRANS NPN 45V 0.2A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: SST3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 350 mW
Description: TRANS NPN 45V 0.2A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: SST3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 350 mW
товар відсутній
BCX70KT216 |
Виробник: Rohm Semiconductor
Description: TRANS NPN 45V 0.2A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: SST3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 350 mW
Description: TRANS NPN 45V 0.2A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: SST3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 350 mW
товар відсутній
BCX71HT116 |
Виробник: Rohm Semiconductor
Description: TRANS PNP 45V 0.2A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 5V
Frequency - Transition: 180MHz
Supplier Device Package: SST3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 350 mW
Description: TRANS PNP 45V 0.2A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 5V
Frequency - Transition: 180MHz
Supplier Device Package: SST3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 350 mW
товар відсутній
BCX71HT216 |
Виробник: Rohm Semiconductor
Description: TRANS PNP 45V 0.2A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 5V
Frequency - Transition: 180MHz
Supplier Device Package: SST3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 350 mW
Description: TRANS PNP 45V 0.2A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 5V
Frequency - Transition: 180MHz
Supplier Device Package: SST3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 350 mW
товар відсутній
BD10IC0WHFV-GTR |
Виробник: Rohm Semiconductor
Description: IC REG LINEAR 1V 1A 6HVSOF
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -25°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 0.25 mA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-HVSOF
Voltage - Output (Min/Fixed): 1V
Control Features: Enable
Voltage Dropout (Max): 0.6V @ 1A
Protection Features: Over Current, Over Temperature, Soft Start
Current - Supply (Max): 500 µA
Description: IC REG LINEAR 1V 1A 6HVSOF
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -25°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 0.25 mA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-HVSOF
Voltage - Output (Min/Fixed): 1V
Control Features: Enable
Voltage Dropout (Max): 0.6V @ 1A
Protection Features: Over Current, Over Temperature, Soft Start
Current - Supply (Max): 500 µA
товар відсутній
BD11600NUX-E2 |
Виробник: Rohm Semiconductor
Description: IC USB SWITCH DPDT 10-VSON
Packaging: Tape & Reel (TR)
Features: USB 2.0
Package / Case: 10-UFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 6Ohm
Supplier Device Package: VSON010X3020
Voltage - Supply, Single (V+): 2.5V ~ 5.5V
Switch Circuit: DPDT
Part Status: Active
Number of Channels: 1
Description: IC USB SWITCH DPDT 10-VSON
Packaging: Tape & Reel (TR)
Features: USB 2.0
Package / Case: 10-UFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 6Ohm
Supplier Device Package: VSON010X3020
Voltage - Supply, Single (V+): 2.5V ~ 5.5V
Switch Circuit: DPDT
Part Status: Active
Number of Channels: 1
на замовлення 28000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4000+ | 23.59 грн |
BD1204GWL-E2 |
Виробник: Rohm Semiconductor
Description: IC LED DRIVER RGLTR DIM UCSP50L1
Description: IC LED DRIVER RGLTR DIM UCSP50L1
товар відсутній
BD1206GUL-E2 |
Виробник: Rohm Semiconductor
Description: IC LED DRIVER RGLTR DIM VCSP50L2
Description: IC LED DRIVER RGLTR DIM VCSP50L2
товар відсутній