Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (100331) > Сторінка 297 з 1673
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
RTR025N05TL | Rohm Semiconductor |
Description: MOSFET N-CH 45V 2.5A TSMT3 Packaging: Tape & Reel (TR) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TSMT3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 10 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
RTR030N05TL | Rohm Semiconductor |
Description: MOSFET N-CH 45V 3A TSMT3 Packaging: Tape & Reel (TR) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 67mOhm @ 3A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TSMT3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 10 V |
на замовлення 39000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
RUE002N02TL | Rohm Semiconductor |
Description: MOSFET N-CH 20V 200MA EMT3 Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 200mA, 2.5V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: EMT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
RUF025N02TL | Rohm Semiconductor |
Description: MOSFET N-CH 20V 2.5A TUMT3 Packaging: Tape & Reel (TR) Package / Case: 3-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 54mOhm @ 2.5A, 4.5V Power Dissipation (Max): 320mW (Ta) Vgs(th) (Max) @ Id: 1.3V @ 1mA Supplier Device Package: TUMT3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 10 V |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
RUL035N02TR | Rohm Semiconductor | Description: MOSFET N-CH 20V 3.5A TUMT6 |
товар відсутній |
||||||||||||||||||
RUQ050N02TR | Rohm Semiconductor |
Description: MOSFET N-CH 20V 5A TSMT6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1.3V @ 1mA Supplier Device Package: TSMT6 (SC-95) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V |
товар відсутній |
||||||||||||||||||
RUR040N02TL | Rohm Semiconductor |
Description: MOSFET N-CH 20V 4A TSMT3 Packaging: Tape & Reel (TR) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.3V @ 1mA Supplier Device Package: TSMT3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 10 V |
на замовлення 27000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
RVQ040N05TR | Rohm Semiconductor |
Description: MOSFET N-CH 45V 4A TSMT6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 53mOhm @ 4A, 10V Power Dissipation (Max): 600mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): 21V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 10 V |
товар відсутній |
||||||||||||||||||
RZL025P01TR | Rohm Semiconductor |
Description: MOSFET P-CH 12V 2.5A TUMT6 Packaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 61mOhm @ 2.5A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: TUMT6 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 6 V |
товар відсутній |
||||||||||||||||||
RZL035P01TR | Rohm Semiconductor | Description: MOSFET P-CH 12V 3.5A TUMT6 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
||||||||||||||||||
RZQ050P01TR | Rohm Semiconductor |
Description: MOSFET P-CH 12V 5A TSMT6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V Power Dissipation (Max): 600mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: TSMT6 (SC-95) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 6 V |
товар відсутній |
||||||||||||||||||
RZR025P01TL | Rohm Semiconductor |
Description: MOSFET P-CH 12V 2.5A TSMT3 Packaging: Tape & Reel (TR) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 61mOhm @ 2.5A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: TSMT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 6 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
RZR040P01TL | Rohm Semiconductor |
Description: MOSFET P-CH 12V 4A TSMT3 Packaging: Tape & Reel (TR) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: TSMT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 6 V |
товар відсутній |
||||||||||||||||||
US6K4TR | Rohm Semiconductor |
Description: MOSFET 2N-CH 20V 1.5A TUMT6 Packaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.5A Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: TUMT6 Part Status: Active |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
BD6512F-E2 | Rohm Semiconductor | Description: IC PWR SWITCH N-CHANNEL 1:2 8SOP |
на замовлення 25 шт: термін постачання 21-31 дні (днів) |
||||||||||||||||||
BD6513F-E2 | Rohm Semiconductor | Description: IC SWITCH HIGH SIDE 2CH SOP-8 |
на замовлення 2330 шт: термін постачання 21-31 дні (днів) |
||||||||||||||||||
BR24S128FVT-WE2 | Rohm Semiconductor | Description: IC EEPROM 128K 400KHZ 8TSSOP-B |
на замовлення 6649 шт: термін постачання 21-31 дні (днів) |
||||||||||||||||||
BR93L56FVT-WE2 | Rohm Semiconductor | Description: IC EEPROM 2KBIT 2MHZ 8TSSOP-B |
на замовлення 3074 шт: термін постачання 21-31 дні (днів) |
||||||||||||||||||
BR93L66FVT-WE2 | Rohm Semiconductor | Description: IC EEPROM 4KBIT 2MHZ 8TSSOP-B |
товар відсутній |
||||||||||||||||||
RTR011P02TL | Rohm Semiconductor | Description: MOSFET P-CH 20V 1.1A TSMT3 |
товар відсутній |
||||||||||||||||||
RZL035P01TR | Rohm Semiconductor | Description: MOSFET P-CH 12V 3.5A TUMT6 |
на замовлення 8556 шт: термін постачання 21-31 дні (днів) |
||||||||||||||||||
BD2042AFJ-E2 | Rohm Semiconductor |
Description: IC PWR SWITCH N-CHAN 1:2 SOP-J8 Features: Status Flag Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 2 Interface: On/Off Switch Type: USB Switch Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 100mOhm Input Type: Non-Inverting Voltage - Load: 2.7V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 500mA Ratio - Input:Output: 1:2 Supplier Device Package: 8-SOP-J Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO Part Status: Obsolete |
товар відсутній |
||||||||||||||||||
BD2046AFJ-E2 | Rohm Semiconductor |
Description: IC PWR SWITCH N-CHAN 1:2 SOP-J8 Features: Status Flag Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 2 Interface: On/Off Switch Type: USB Switch Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 100mOhm Input Type: Non-Inverting Voltage - Load: 2.7V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 250mA Ratio - Input:Output: 1:2 Supplier Device Package: 8-SOP-J Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO Part Status: Obsolete |
товар відсутній |
||||||||||||||||||
BD2051AFJ-E2 | Rohm Semiconductor |
Description: IC PWR SWITCH N-CHAN 1:1 SOP-J8 Features: Status Flag Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: USB Switch Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 80mOhm Input Type: Non-Inverting Voltage - Load: 2.7V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 500mA Ratio - Input:Output: 1:1 Supplier Device Package: 8-SOP-J Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO Part Status: Not For New Designs |
на замовлення 2489 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
BD2052AFJ-E2 | Rohm Semiconductor |
Description: IC PWR SWITCH N-CHAN 1:2 SOP-J8 Features: Status Flag Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 2 Interface: On/Off Switch Type: USB Switch Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 100mOhm Input Type: Non-Inverting Voltage - Load: 2.7V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 500mA Ratio - Input:Output: 1:2 Supplier Device Package: 8-SOP-J Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO Part Status: Obsolete |
товар відсутній |
||||||||||||||||||
BD2055AFJ-E2 | Rohm Semiconductor |
Description: IC PWR SWITCH N-CHAN 1:1 SOP-J8 Features: Status Flag Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: USB Switch Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 80mOhm Input Type: Non-Inverting Voltage - Load: 2.7V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 250mA Ratio - Input:Output: 1:1 Supplier Device Package: 8-SOP-J Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO Part Status: Not For New Designs |
на замовлення 55 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
BD2061AFJ-E2 | Rohm Semiconductor |
Description: IC SWITCH USB HI SIDE 1CH SOP-J8 Features: Status Flag Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: USB Switch Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 80mOhm Input Type: Non-Inverting Voltage - Load: 2.7V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1A Ratio - Input:Output: 1:1 Supplier Device Package: 8-SOP-J Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO Part Status: Obsolete |
на замовлення 1423 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
BD2065AFJ-E2 | Rohm Semiconductor |
Description: IC SWITCH USB HI SIDE 1CH SOP-J8 Features: Status Flag Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: USB Switch Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 80mOhm Input Type: Non-Inverting Voltage - Load: 2.7V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1A Ratio - Input:Output: 1:1 Supplier Device Package: 8-SOP-J Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO Part Status: Not For New Designs |
на замовлення 1325 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
BD6516F-E2 | Rohm Semiconductor | Description: IC PWR SWITCH N-CHANNEL 1:2 8SOP |
товар відсутній |
||||||||||||||||||
BD6517F-E2 | Rohm Semiconductor | Description: IC PWR SWITCH N-CHANNEL 1:2 8SOP |
на замовлення 90 шт: термін постачання 21-31 дні (днів) |
||||||||||||||||||
BD6519FJ-E2 | Rohm Semiconductor |
Description: IC SWITCH HIGH SIDE 1CH SOP-J8 Features: Load Discharge, Status Flag Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: USB Switch Operating Temperature: -40°C ~ 85°C Output Configuration: High Side Rds On (Typ): 100mOhm Input Type: Non-Inverting Voltage - Load: 3V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 500mA Ratio - Input:Output: 1:1 Supplier Device Package: 8-SOP-J Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO Part Status: Obsolete |
на замовлення 2292 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
BR24L01AFVT-WE2 | Rohm Semiconductor |
Description: IC EEPROM 1KBIT I2C 8TSSOP Packaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 1Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-TSSOP-B Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Memory Organization: 128 x 8 DigiKey Programmable: Not Verified |
на замовлення 2385 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
BR24L04FVT-WE2 | Rohm Semiconductor |
Description: IC EEPROM 4KBIT I2C 8TSSOPB Packaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 4Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-TSSOP-B Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Memory Organization: 512 x 8 DigiKey Programmable: Verified |
на замовлення 2917 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
BR24L08FVT-WE2 | Rohm Semiconductor | Description: IC EEPROM 8KBIT I2C 8TSSOPB |
на замовлення 3101 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
BR24L16FVT-WE2 | Rohm Semiconductor |
Description: IC EEPROM 16KBIT I2C 8TSSOP Packaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 16Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-TSSOP-B Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Memory Organization: 2K x 8 DigiKey Programmable: Verified |
товар відсутній |
||||||||||||||||||
BR24L32FVT-WE2 | Rohm Semiconductor |
Description: IC EEPROM 32KBIT I2C 8TSSOP Packaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 32Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-TSSOP-B Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Memory Organization: 4K x 8 DigiKey Programmable: Verified |
на замовлення 7528 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
BR24L64FJ-WE2 | Rohm Semiconductor |
Description: IC EEPROM 64KBIT I2C 8SOPJ Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 64Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-SOP-J Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Memory Organization: 8K x 8 DigiKey Programmable: Verified |
на замовлення 6928 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
BR24S128FVT-WE2 | Rohm Semiconductor | Description: IC EEPROM 128K 400KHZ 8TSSOP-B |
на замовлення 6649 шт: термін постачання 21-31 дні (днів) |
||||||||||||||||||
BR24S256FJ-WE2 | Rohm Semiconductor | Description: IC EEPROM 256KBIT I2C 8SOPJ |
товар відсутній |
||||||||||||||||||
BR93L46FVT-WE2 | Rohm Semiconductor |
Description: IC EEPROM 1KBIT MICROWIRE 8TSSOP Packaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 1Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 2 kHz Memory Format: EEPROM Supplier Device Package: 8-TSSOP-B Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: Microwire Memory Organization: 64 x 16 DigiKey Programmable: Not Verified |
на замовлення 2934 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
BR93L56FVT-WE2 | Rohm Semiconductor | Description: IC EEPROM 2KBIT 2MHZ 8TSSOP-B |
на замовлення 3074 шт: термін постачання 21-31 дні (днів) |
||||||||||||||||||
BR93L66FVT-WE2 | Rohm Semiconductor | Description: IC EEPROM 4KBIT 2MHZ 8TSSOP-B |
на замовлення 3032 шт: термін постачання 21-31 дні (днів) |
||||||||||||||||||
BR93L86FJ-WE2 | Rohm Semiconductor |
Description: IC EEPROM 16KBIT SPI 2MHZ 8SOPJ Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 16Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 2 MHz Memory Format: EEPROM Supplier Device Package: 8-SOP-J Write Cycle Time - Word, Page: 5ms Memory Interface: Microwire Memory Organization: 1K x 16 DigiKey Programmable: Verified |
товар відсутній |
||||||||||||||||||
EM5K5T2R | Rohm Semiconductor | Description: MOSFET 2N-CH 30V 0.3A EMT5 |
на замовлення 12847 шт: термін постачання 21-31 дні (днів) |
||||||||||||||||||
EM6M1T2R | Rohm Semiconductor |
Description: MOSFET N/P-CH 30V/20V EMT6 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 150mW Drain to Source Voltage (Vdss): 30V, 20V Current - Continuous Drain (Id) @ 25°C: 100mA, 200mA Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 5V Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4V Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V FET Feature: Logic Level Gate Supplier Device Package: EMT6 Part Status: Not For New Designs |
на замовлення 7965 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
QS6K21TR | Rohm Semiconductor |
Description: MOSFET 2N-CH 45V 1A TSMT6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.25W Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 1A Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) |
на замовлення 6836 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
RRL025P03TR | Rohm Semiconductor |
Description: MOSFET P-CH 30V 2.5A TUMT6 Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 75mOhm @ 2.5A, 10V Power Dissipation (Max): 320mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TUMT6 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 10 V |
на замовлення 5910 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
RRQ045P03TR | Rohm Semiconductor |
Description: MOSFET P-CH 30V 4.5A TSMT6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V Power Dissipation (Max): 600mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 10 V |
на замовлення 5218 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
RRR030P03TL | Rohm Semiconductor |
Description: MOSFET P-CH 30V 3A TSMT3 Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 10 V |
на замовлення 10775 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
RSQ020N03TR | Rohm Semiconductor |
Description: MOSFET N-CH 30V 2A TSMT6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 134mOhm @ 2A, 10V Power Dissipation (Max): 600mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V |
на замовлення 2453 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
RSR030N06TL | Rohm Semiconductor |
Description: MOSFET N-CH 60V 3A TSMT3 Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 10V Power Dissipation (Max): 540mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 10 V |
на замовлення 3175 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
RTR011P02TL | Rohm Semiconductor | Description: MOSFET P-CH 20V 1.1A TSMT3 |
на замовлення 2672 шт: термін постачання 21-31 дні (днів) |
||||||||||||||||||
RTR025N05TL | Rohm Semiconductor |
Description: MOSFET N-CH 45V 2.5A TSMT3 Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TSMT3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 10 V |
на замовлення 5900 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
RTR030N05TL | Rohm Semiconductor |
Description: MOSFET N-CH 45V 3A TSMT3 Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 67mOhm @ 3A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TSMT3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 10 V |
на замовлення 39635 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
RUE002N02TL | Rohm Semiconductor |
Description: MOSFET N-CH 20V 200MA EMT3 Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 200mA, 2.5V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: EMT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V |
на замовлення 23161 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
RUF025N02TL | Rohm Semiconductor |
Description: MOSFET N-CH 20V 2.5A TUMT3 Packaging: Cut Tape (CT) Package / Case: 3-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 54mOhm @ 2.5A, 4.5V Power Dissipation (Max): 320mW (Ta) Vgs(th) (Max) @ Id: 1.3V @ 1mA Supplier Device Package: TUMT3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 10 V |
на замовлення 19828 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
RUL035N02TR | Rohm Semiconductor | Description: MOSFET N-CH 20V 3.5A TUMT6 |
на замовлення 870 шт: термін постачання 21-31 дні (днів) |
||||||||||||||||||
RUQ050N02TR | Rohm Semiconductor |
Description: MOSFET N-CH 20V 5A TSMT6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1.3V @ 1mA Supplier Device Package: TSMT6 (SC-95) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V |
на замовлення 2935 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
RUR040N02TL | Rohm Semiconductor |
Description: MOSFET N-CH 20V 4A TSMT3 Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.3V @ 1mA Supplier Device Package: TSMT3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 10 V |
на замовлення 28309 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
RVQ040N05TR | Rohm Semiconductor |
Description: MOSFET N-CH 45V 4A TSMT6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 53mOhm @ 4A, 10V Power Dissipation (Max): 600mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): 21V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 10 V |
товар відсутній |
RTR025N05TL |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 45V 2.5A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 10 V
Description: MOSFET N-CH 45V 2.5A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 14.16 грн |
RTR030N05TL |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 45V 3A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 10 V
Description: MOSFET N-CH 45V 3A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 10 V
на замовлення 39000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 14.29 грн |
6000+ | 13.06 грн |
9000+ | 12.13 грн |
30000+ | 11.12 грн |
RUE002N02TL |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 20V 200MA EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 200mA, 2.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: EMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V
Description: MOSFET N-CH 20V 200MA EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 200mA, 2.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: EMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 3.44 грн |
6000+ | 3.17 грн |
9000+ | 3.02 грн |
RUF025N02TL |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 20V 2.5A TUMT3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: TUMT3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 10 V
Description: MOSFET N-CH 20V 2.5A TUMT3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: TUMT3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 10 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 16.23 грн |
6000+ | 14.81 грн |
9000+ | 13.71 грн |
RUQ050N02TR |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 20V 5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V
Description: MOSFET N-CH 20V 5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V
товар відсутній
RUR040N02TL |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 20V 4A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 10 V
Description: MOSFET N-CH 20V 4A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 10 V
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 18.39 грн |
6000+ | 16.33 грн |
9000+ | 15.63 грн |
15000+ | 13.93 грн |
21000+ | 13.66 грн |
RVQ040N05TR |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 45V 4A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 4A, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): 21V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 10 V
Description: MOSFET N-CH 45V 4A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 4A, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): 21V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 10 V
товар відсутній
RZL025P01TR |
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 12V 2.5A TUMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 61mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TUMT6
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 6 V
Description: MOSFET P-CH 12V 2.5A TUMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 61mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TUMT6
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 6 V
товар відсутній
RZL035P01TR |
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 12V 3.5A TUMT6
Description: MOSFET P-CH 12V 3.5A TUMT6
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)RZQ050P01TR |
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 12V 5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 6 V
Description: MOSFET P-CH 12V 5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 6 V
товар відсутній
RZR025P01TL |
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 12V 2.5A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 61mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 6 V
Description: MOSFET P-CH 12V 2.5A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 61mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 6 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 13.86 грн |
6000+ | 12.67 грн |
RZR040P01TL |
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 12V 4A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 6 V
Description: MOSFET P-CH 12V 4A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 6 V
товар відсутній
US6K4TR |
Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 20V 1.5A TUMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TUMT6
Part Status: Active
Description: MOSFET 2N-CH 20V 1.5A TUMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TUMT6
Part Status: Active
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 16.88 грн |
6000+ | 14.97 грн |
9000+ | 14.32 грн |
BD6512F-E2 |
Виробник: Rohm Semiconductor
Description: IC PWR SWITCH N-CHANNEL 1:2 8SOP
Description: IC PWR SWITCH N-CHANNEL 1:2 8SOP
на замовлення 25 шт:
термін постачання 21-31 дні (днів)BD6513F-E2 |
Виробник: Rohm Semiconductor
Description: IC SWITCH HIGH SIDE 2CH SOP-8
Description: IC SWITCH HIGH SIDE 2CH SOP-8
на замовлення 2330 шт:
термін постачання 21-31 дні (днів)BR24S128FVT-WE2 |
Виробник: Rohm Semiconductor
Description: IC EEPROM 128K 400KHZ 8TSSOP-B
Description: IC EEPROM 128K 400KHZ 8TSSOP-B
на замовлення 6649 шт:
термін постачання 21-31 дні (днів)BR93L56FVT-WE2 |
Виробник: Rohm Semiconductor
Description: IC EEPROM 2KBIT 2MHZ 8TSSOP-B
Description: IC EEPROM 2KBIT 2MHZ 8TSSOP-B
на замовлення 3074 шт:
термін постачання 21-31 дні (днів)BR93L66FVT-WE2 |
Виробник: Rohm Semiconductor
Description: IC EEPROM 4KBIT 2MHZ 8TSSOP-B
Description: IC EEPROM 4KBIT 2MHZ 8TSSOP-B
товар відсутній
RZL035P01TR |
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 12V 3.5A TUMT6
Description: MOSFET P-CH 12V 3.5A TUMT6
на замовлення 8556 шт:
термін постачання 21-31 дні (днів)BD2042AFJ-E2 |
Виробник: Rohm Semiconductor
Description: IC PWR SWITCH N-CHAN 1:2 SOP-J8
Features: Status Flag
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 100mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:2
Supplier Device Package: 8-SOP-J
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Part Status: Obsolete
Description: IC PWR SWITCH N-CHAN 1:2 SOP-J8
Features: Status Flag
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 100mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:2
Supplier Device Package: 8-SOP-J
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Part Status: Obsolete
товар відсутній
BD2046AFJ-E2 |
Виробник: Rohm Semiconductor
Description: IC PWR SWITCH N-CHAN 1:2 SOP-J8
Features: Status Flag
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 100mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 250mA
Ratio - Input:Output: 1:2
Supplier Device Package: 8-SOP-J
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Part Status: Obsolete
Description: IC PWR SWITCH N-CHAN 1:2 SOP-J8
Features: Status Flag
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 100mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 250mA
Ratio - Input:Output: 1:2
Supplier Device Package: 8-SOP-J
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Part Status: Obsolete
товар відсутній
BD2051AFJ-E2 |
Виробник: Rohm Semiconductor
Description: IC PWR SWITCH N-CHAN 1:1 SOP-J8
Features: Status Flag
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOP-J
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Part Status: Not For New Designs
Description: IC PWR SWITCH N-CHAN 1:1 SOP-J8
Features: Status Flag
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOP-J
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Part Status: Not For New Designs
на замовлення 2489 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 152.51 грн |
10+ | 131.43 грн |
25+ | 124.03 грн |
100+ | 99.16 грн |
250+ | 93.11 грн |
500+ | 81.47 грн |
1000+ | 66.4 грн |
BD2052AFJ-E2 |
Виробник: Rohm Semiconductor
Description: IC PWR SWITCH N-CHAN 1:2 SOP-J8
Features: Status Flag
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 100mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:2
Supplier Device Package: 8-SOP-J
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Part Status: Obsolete
Description: IC PWR SWITCH N-CHAN 1:2 SOP-J8
Features: Status Flag
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 100mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:2
Supplier Device Package: 8-SOP-J
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Part Status: Obsolete
товар відсутній
BD2055AFJ-E2 |
Виробник: Rohm Semiconductor
Description: IC PWR SWITCH N-CHAN 1:1 SOP-J8
Features: Status Flag
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 250mA
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOP-J
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Part Status: Not For New Designs
Description: IC PWR SWITCH N-CHAN 1:1 SOP-J8
Features: Status Flag
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 250mA
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOP-J
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Part Status: Not For New Designs
на замовлення 55 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 194.53 грн |
10+ | 167.99 грн |
25+ | 158.46 грн |
BD2061AFJ-E2 |
Виробник: Rohm Semiconductor
Description: IC SWITCH USB HI SIDE 1CH SOP-J8
Features: Status Flag
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOP-J
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Part Status: Obsolete
Description: IC SWITCH USB HI SIDE 1CH SOP-J8
Features: Status Flag
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOP-J
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Part Status: Obsolete
на замовлення 1423 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 126.06 грн |
10+ | 109.02 грн |
25+ | 102.89 грн |
100+ | 82.25 грн |
250+ | 77.23 грн |
500+ | 67.58 грн |
1000+ | 55.08 грн |
BD2065AFJ-E2 |
Виробник: Rohm Semiconductor
Description: IC SWITCH USB HI SIDE 1CH SOP-J8
Features: Status Flag
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOP-J
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Part Status: Not For New Designs
Description: IC SWITCH USB HI SIDE 1CH SOP-J8
Features: Status Flag
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOP-J
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Part Status: Not For New Designs
на замовлення 1325 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 126.06 грн |
10+ | 109.02 грн |
25+ | 102.89 грн |
100+ | 82.25 грн |
250+ | 77.23 грн |
500+ | 67.58 грн |
1000+ | 55.08 грн |
BD6516F-E2 |
Виробник: Rohm Semiconductor
Description: IC PWR SWITCH N-CHANNEL 1:2 8SOP
Description: IC PWR SWITCH N-CHANNEL 1:2 8SOP
товар відсутній
BD6517F-E2 |
Виробник: Rohm Semiconductor
Description: IC PWR SWITCH N-CHANNEL 1:2 8SOP
Description: IC PWR SWITCH N-CHANNEL 1:2 8SOP
на замовлення 90 шт:
термін постачання 21-31 дні (днів)BD6519FJ-E2 |
Виробник: Rohm Semiconductor
Description: IC SWITCH HIGH SIDE 1CH SOP-J8
Features: Load Discharge, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C
Output Configuration: High Side
Rds On (Typ): 100mOhm
Input Type: Non-Inverting
Voltage - Load: 3V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOP-J
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Part Status: Obsolete
Description: IC SWITCH HIGH SIDE 1CH SOP-J8
Features: Load Discharge, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C
Output Configuration: High Side
Rds On (Typ): 100mOhm
Input Type: Non-Inverting
Voltage - Load: 3V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOP-J
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Part Status: Obsolete
на замовлення 2292 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 173.52 грн |
10+ | 150.31 грн |
25+ | 141.8 грн |
100+ | 113.38 грн |
250+ | 106.46 грн |
500+ | 93.16 грн |
1000+ | 75.92 грн |
BR24L01AFVT-WE2 |
Виробник: Rohm Semiconductor
Description: IC EEPROM 1KBIT I2C 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP-B
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 1KBIT I2C 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP-B
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
на замовлення 2385 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 36.57 грн |
10+ | 34.32 грн |
25+ | 31.89 грн |
50+ | 29.77 грн |
100+ | 26.44 грн |
250+ | 26.1 грн |
500+ | 25.29 грн |
1000+ | 24.61 грн |
BR24L04FVT-WE2 |
Виробник: Rohm Semiconductor
Description: IC EEPROM 4KBIT I2C 8TSSOPB
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP-B
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 512 x 8
DigiKey Programmable: Verified
Description: IC EEPROM 4KBIT I2C 8TSSOPB
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP-B
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 512 x 8
DigiKey Programmable: Verified
на замовлення 2917 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 49.8 грн |
10+ | 42.49 грн |
25+ | 40.49 грн |
50+ | 36.66 грн |
100+ | 35.38 грн |
250+ | 33.74 грн |
500+ | 32.02 грн |
1000+ | 30.9 грн |
BR24L08FVT-WE2 |
Виробник: Rohm Semiconductor
Description: IC EEPROM 8KBIT I2C 8TSSOPB
Description: IC EEPROM 8KBIT I2C 8TSSOPB
на замовлення 3101 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 42.02 грн |
10+ | 36.94 грн |
25+ | 36.48 грн |
50+ | 34.03 грн |
100+ | 30.43 грн |
250+ | 30.17 грн |
500+ | 29.24 грн |
1000+ | 28.19 грн |
BR24L16FVT-WE2 |
Виробник: Rohm Semiconductor
Description: IC EEPROM 16KBIT I2C 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP-B
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 2K x 8
DigiKey Programmable: Verified
Description: IC EEPROM 16KBIT I2C 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP-B
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 2K x 8
DigiKey Programmable: Verified
товар відсутній
BR24L32FVT-WE2 |
Виробник: Rohm Semiconductor
Description: IC EEPROM 32KBIT I2C 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP-B
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 4K x 8
DigiKey Programmable: Verified
Description: IC EEPROM 32KBIT I2C 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP-B
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 4K x 8
DigiKey Programmable: Verified
на замовлення 7528 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 87.93 грн |
10+ | 77.25 грн |
25+ | 75.2 грн |
50+ | 70.22 грн |
100+ | 62.77 грн |
250+ | 62.58 грн |
500+ | 60.63 грн |
1000+ | 58.05 грн |
BR24L64FJ-WE2 |
Виробник: Rohm Semiconductor
Description: IC EEPROM 64KBIT I2C 8SOPJ
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 8K x 8
DigiKey Programmable: Verified
Description: IC EEPROM 64KBIT I2C 8SOPJ
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 8K x 8
DigiKey Programmable: Verified
на замовлення 6928 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 123.72 грн |
10+ | 108.65 грн |
25+ | 105.68 грн |
50+ | 98.66 грн |
100+ | 88.19 грн |
250+ | 87.94 грн |
500+ | 85.19 грн |
1000+ | 81.57 грн |
BR24S128FVT-WE2 |
Виробник: Rohm Semiconductor
Description: IC EEPROM 128K 400KHZ 8TSSOP-B
Description: IC EEPROM 128K 400KHZ 8TSSOP-B
на замовлення 6649 шт:
термін постачання 21-31 дні (днів)BR93L46FVT-WE2 |
Виробник: Rohm Semiconductor
Description: IC EEPROM 1KBIT MICROWIRE 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP-B
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: Microwire
Memory Organization: 64 x 16
DigiKey Programmable: Not Verified
Description: IC EEPROM 1KBIT MICROWIRE 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP-B
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: Microwire
Memory Organization: 64 x 16
DigiKey Programmable: Not Verified
на замовлення 2934 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 45.13 грн |
10+ | 42.94 грн |
25+ | 39.83 грн |
50+ | 37.18 грн |
100+ | 33.02 грн |
250+ | 32.6 грн |
500+ | 31.58 грн |
1000+ | 30.74 грн |
BR93L56FVT-WE2 |
Виробник: Rohm Semiconductor
Description: IC EEPROM 2KBIT 2MHZ 8TSSOP-B
Description: IC EEPROM 2KBIT 2MHZ 8TSSOP-B
на замовлення 3074 шт:
термін постачання 21-31 дні (днів)BR93L66FVT-WE2 |
Виробник: Rohm Semiconductor
Description: IC EEPROM 4KBIT 2MHZ 8TSSOP-B
Description: IC EEPROM 4KBIT 2MHZ 8TSSOP-B
на замовлення 3032 шт:
термін постачання 21-31 дні (днів)BR93L86FJ-WE2 |
Виробник: Rohm Semiconductor
Description: IC EEPROM 16KBIT SPI 2MHZ 8SOPJ
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Write Cycle Time - Word, Page: 5ms
Memory Interface: Microwire
Memory Organization: 1K x 16
DigiKey Programmable: Verified
Description: IC EEPROM 16KBIT SPI 2MHZ 8SOPJ
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP-J
Write Cycle Time - Word, Page: 5ms
Memory Interface: Microwire
Memory Organization: 1K x 16
DigiKey Programmable: Verified
товар відсутній
EM5K5T2R |
Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 0.3A EMT5
Description: MOSFET 2N-CH 30V 0.3A EMT5
на замовлення 12847 шт:
термін постачання 21-31 дні (днів)EM6M1T2R |
Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 30V/20V EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 100mA, 200mA
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 5V
Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
FET Feature: Logic Level Gate
Supplier Device Package: EMT6
Part Status: Not For New Designs
Description: MOSFET N/P-CH 30V/20V EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 100mA, 200mA
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 5V
Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
FET Feature: Logic Level Gate
Supplier Device Package: EMT6
Part Status: Not For New Designs
на замовлення 7965 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 36.57 грн |
10+ | 30.05 грн |
100+ | 20.9 грн |
500+ | 15.31 грн |
1000+ | 12.44 грн |
2000+ | 11.12 грн |
QS6K21TR |
Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 45V 1A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 1A
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Description: MOSFET 2N-CH 45V 1A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 1A
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
на замовлення 6836 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 43.58 грн |
10+ | 36.27 грн |
100+ | 25.09 грн |
500+ | 19.67 грн |
1000+ | 16.74 грн |
RRL025P03TR |
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 2.5A TUMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2.5A, 10V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TUMT6
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 10 V
Description: MOSFET P-CH 30V 2.5A TUMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2.5A, 10V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TUMT6
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 10 V
на замовлення 5910 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 46.69 грн |
10+ | 39.34 грн |
100+ | 27.22 грн |
500+ | 21.35 грн |
1000+ | 18.17 грн |
RRQ045P03TR |
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 4.5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 10 V
Description: MOSFET P-CH 30V 4.5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 10 V
на замовлення 5218 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 98.04 грн |
10+ | 59.49 грн |
100+ | 39.47 грн |
500+ | 28.96 грн |
1000+ | 26.35 грн |
RRR030P03TL |
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 3A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 10 V
Description: MOSFET P-CH 30V 3A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 10 V
на замовлення 10775 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 46.69 грн |
10+ | 38.36 грн |
100+ | 28.64 грн |
500+ | 21.12 грн |
1000+ | 16.32 грн |
RSQ020N03TR |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 2A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 134mOhm @ 2A, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V
Description: MOSFET N-CH 30V 2A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 134mOhm @ 2A, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V
на замовлення 2453 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 45.91 грн |
10+ | 38.44 грн |
100+ | 26.63 грн |
500+ | 20.88 грн |
1000+ | 17.77 грн |
RSR030N06TL |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 60V 3A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 10V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 10 V
Description: MOSFET N-CH 60V 3A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 10V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 10 V
на замовлення 3175 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 50.58 грн |
10+ | 30.05 грн |
100+ | 19.34 грн |
500+ | 13.81 грн |
1000+ | 12.41 грн |
RTR011P02TL |
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 20V 1.1A TSMT3
Description: MOSFET P-CH 20V 1.1A TSMT3
на замовлення 2672 шт:
термін постачання 21-31 дні (днів)RTR025N05TL |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 45V 2.5A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 10 V
Description: MOSFET N-CH 45V 2.5A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 10 V
на замовлення 5900 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 42.02 грн |
10+ | 34.54 грн |
100+ | 24.04 грн |
500+ | 17.61 грн |
1000+ | 14.32 грн |
RTR030N05TL |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 45V 3A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 10 V
Description: MOSFET N-CH 45V 3A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 10 V
на замовлення 39635 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 42.8 грн |
10+ | 34.92 грн |
100+ | 24.26 грн |
500+ | 17.78 грн |
RUE002N02TL |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 20V 200MA EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 200mA, 2.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: EMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V
Description: MOSFET N-CH 20V 200MA EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 200mA, 2.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: EMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V
на замовлення 23161 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
12+ | 27.23 грн |
19+ | 16.04 грн |
100+ | 10.11 грн |
500+ | 7.05 грн |
1000+ | 6.26 грн |
RUF025N02TL |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 20V 2.5A TUMT3
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: TUMT3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 10 V
Description: MOSFET N-CH 20V 2.5A TUMT3
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: TUMT3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 10 V
на замовлення 19828 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 42.8 грн |
10+ | 35.67 грн |
100+ | 24.68 грн |
500+ | 19.35 грн |
1000+ | 16.47 грн |
RUL035N02TR |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 20V 3.5A TUMT6
Description: MOSFET N-CH 20V 3.5A TUMT6
на замовлення 870 шт:
термін постачання 21-31 дні (днів)RUQ050N02TR |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 20V 5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V
Description: MOSFET N-CH 20V 5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V
на замовлення 2935 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 56.02 грн |
10+ | 46.76 грн |
100+ | 32.38 грн |
500+ | 25.39 грн |
1000+ | 21.61 грн |
RUR040N02TL |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 20V 4A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 10 V
Description: MOSFET N-CH 20V 4A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 10 V
на замовлення 28309 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 73.92 грн |
10+ | 44.66 грн |
100+ | 29.24 грн |
500+ | 21.19 грн |
1000+ | 19.18 грн |
RVQ040N05TR |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 45V 4A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 4A, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): 21V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 10 V
Description: MOSFET N-CH 45V 4A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 4A, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): 21V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 10 V
товар відсутній