Продукція > RENESAS ELECTRONICS AMERICA INC > Всі товари виробника RENESAS ELECTRONICS AMERICA INC (17915) > Сторінка 106 з 299
| Фото | Назва | Виробник | Інформація |
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R5F5630ACDFB#V0 | Renesas Electronics America Inc |
 Description: IC MCU 32BIT 768KB FLASH 144LQFP |
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R5F5630BCDFP#V0 | Renesas Electronics America Inc |
Description: IC MCU 32BIT 1MB FLASH 100LQFP |
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R5F5630BDDFB#V0 | Renesas Electronics America Inc |
Description: IC MCU 32BIT 1MB FLASH 144LQFP |
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R5F5630BDDFP#V0 | Renesas Electronics America Inc |
Description: IC MCU 32BIT 1MB FLASH 100LQFP |
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R5F5630DCDFP#V0 | Renesas Electronics America Inc |
Description: IC MCU 32BIT 1.5MB FLASH 100LQFP |
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R5F5630DDDFB#V0 | Renesas Electronics America Inc |
Description: IC MCU 32BIT 1.5MB FLASH 144LQFP |
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R5F5630ECDFB#V0 | Renesas Electronics America Inc |
Description: IC MCU 32BIT 2MB FLASH 144LQFP |
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R5F5631ACDFB#V0 | Renesas Electronics America Inc |
Description: IC MCU 32BIT 768KB FLASH 144LQFP |
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R5F5631ADDFB#V0 | Renesas Electronics America Inc |
Description: IC MCU 32BIT 768KB FLASH 144LQFP |
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R5F5631BCDBG#U0 | Renesas Electronics America Inc |
Description: IC MCU 32BIT 1MB FLASH 176LFBGA |
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R5F5631BCDFB#V0 | Renesas Electronics America Inc |
Description: IC MCU 32BIT 1MB FLASH 144LQFP |
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R5F5631BCDFC#V0 | Renesas Electronics America Inc |
Description: IC MCU 32BIT 1MB FLASH 176LFQFP |
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R5F5631BCDFP#V0 | Renesas Electronics America Inc |
Description: IC MCU 32BIT 1MB FLASH 100LQFP |
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R5F5631ECDFB#V0 | Renesas Electronics America Inc |
Description: IC MCU 32BIT 2MB FLASH 144LQFP |
на замовлення 8 шт: термін постачання 21-31 дні (днів) |
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R5F5631ECDFC#V0 | Renesas Electronics America Inc |
Description: IC MCU 32BIT 2MB FLASH 176LFQFP |
на замовлення 149 шт: термін постачання 21-31 дні (днів) |
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R5F5631EDDFB#V0 | Renesas Electronics America Inc |
Description: IC MCU 32BIT 2MB FLASH 144LQFP |
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R5F563NACDBG#U0 | Renesas Electronics America Inc |
Description: IC MCU 32BIT 768KB FLSH 176LFBGA |
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R5F563NACDFP#V0 | Renesas Electronics America Inc |
Description: IC MCU 32BIT 768KB FLASH 100LQFP |
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R5F563NADDFB#V0 | Renesas Electronics America Inc |
Description: IC MCU 32BIT 768KB FLASH 144LQFP |
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R5F563NADDFC#V0 | Renesas Electronics America Inc |
Description: IC MCU 32BIT 768KB FLSH 176LFQFP |
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R5F563NBCDBG#U0 | Renesas Electronics America Inc |
Description: IC MCU 32BIT 1MB FLASH 176LFBGA |
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R5F563NBCDFB#V0 | Renesas Electronics America Inc |
Description: IC MCU 32BIT 1MB FLASH 144LQFP |
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R5F563NBCDFC#V0 | Renesas Electronics America Inc |
Description: IC MCU 32BIT 1MB FLASH 176LFQFP |
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R5F563NBDDFB#V0 | Renesas Electronics America Inc |
Description: IC MCU 32BIT 1MB FLASH 144LQFP |
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R5F563NBDDFP#V0 | Renesas Electronics America Inc |
Description: IC MCU 32BIT 1MB FLASH 100LFQFP |
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R5F563NDDDFC#V0 | Renesas Electronics America Inc |
Description: IC MCU 32BIT 1.5MB FLSH 176LFQFP |
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R5F563NECDFC#V0 | Renesas Electronics America Inc |
Description: IC MCU 32BIT 2MB FLASH 176LFQFP |
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R5F563T4EDFL#V0 | Renesas Electronics America Inc |
Description: IC MCU 32BIT 32KB FLASH 48LQFP |
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R5F563T4EDFM#V0 | Renesas Electronics America Inc |
Description: IC MCU 32BIT 32KB FLASH 64LQFP |
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R5F563T6EDFL#V0 | Renesas Electronics America Inc |
Description: IC MCU 32BIT 64KB FLASH 48LQFP |
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R5F563TBBDFB#V0 | Renesas Electronics America Inc |
Description: IC MCU 32BIT 256KB FLASH 144LQFP |
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R5F563TBEDFB#V0 | Renesas Electronics America Inc |
Description: IC MCU 32BIT 256KB FLASH 144LQFP |
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R5F64178DFD#UB | Renesas Electronics America Inc |
Description: IC MCU 16/32BIT 768KB 144LFQFP |
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R5F64189HDFD#UA | Renesas Electronics America Inc |
Description: IC MCU 16/32B 1MB FLASH 144LFQFP Packaging: Tray Package / Case: 144-LQFP Mounting Type: Surface Mount Speed: 64MHz Program Memory Size: 1MB (1M x 8) RAM Size: 63K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 8K x 8 Core Processor: R32C/100 Data Converters: A/D 34x10b; D/A 2x8b Core Size: 16/32-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, EBI/EMI, I²C, IEBus, UART/USART Peripherals: DMA, LVD, PWM, WDT Supplier Device Package: 144-LFQFP (20x20) Number of I/O: 120 DigiKey Programmable: Not Verified |
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R5S72642W144FP#U0 | Renesas Electronics America Inc |
Description: IC MCU 32BIT ROMLESS 208LQFP |
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R5S72643P144FP#UZ | Renesas Electronics America Inc |
Description: IC MCU 32BIT ROMLESS 208LQFP Packaging: Tray Package / Case: 208-LQFP Mounting Type: Surface Mount Speed: 144MHz RAM Size: 1M x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External Program Memory Type: ROMless Core Processor: SH2A-FPU Data Converters: A/D 8x10b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.1V ~ 3.6V Connectivity: CANbus, I²C, SCI, SD, SIO, SPI, USB Peripherals: DMA, POR, PWM, WDT Supplier Device Package: 208-LFQFP (28x28) Part Status: Obsolete Number of I/O: 115 DigiKey Programmable: Not Verified |
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RJK03M4DPA-00#J5A | Renesas Electronics America Inc |
Description: MOSFET N-CH 30V 35A 8WPAK Packaging: Tape & Reel (TR) Package / Case: 8-WFDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 17.5A, 10V Power Dissipation (Max): 30W (Tc) Supplier Device Package: 8-WPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 10 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RJK03M5DPA-00#J5A | Renesas Electronics America Inc |
Description: MOSFET N-CH 30V 30A 8WPAK Packaging: Tape & Reel (TR) Package / Case: 8-WFDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V Power Dissipation (Max): 30W (Tc) Supplier Device Package: 8-WPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 10 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RJK2057DPA-00#J0 | Renesas Electronics America Inc |
Description: MOSFET N-CH 200V 20A 8WPAK |
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| RJK4002DJE-00#Z0 | Renesas Electronics America Inc |
Description: MOSFET N-CH 400V 3A TO92MOD |
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RJK4002DPP-M0#T2 | Renesas Electronics America Inc |
Description: MOSFET N-CH 400V 3A TO220FL |
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RJK4006DPP-M0#T2 | Renesas Electronics America Inc |
Description: MOSFET N-CH 400V 8A TO220FL |
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RJK4512DPE-00#J3 | Renesas Electronics America Inc |
Description: MOSFET N-CH 450V 14A 4LDPAK Packaging: Tape & Reel (TR) Package / Case: SC-83 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Rds On (Max) @ Id, Vgs: 510mOhm @ 7A, 10V Power Dissipation (Max): 100W (Tc) Supplier Device Package: LDPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 450 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V |
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RJK4514DPK-00#T0 | Renesas Electronics America Inc |
Description: MOSFET N-CH 450V 22A TO3P Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 11A, 10V Power Dissipation (Max): 150W (Tc) Supplier Device Package: TO-3P Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 450 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V |
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RJK5012DPE-00#J3 | Renesas Electronics America Inc |
Description: MOSFET N-CH 500V 12A 4LDPAK Packaging: Tape & Reel (TR) Package / Case: SC-83 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 620mOhm @ 6A, 10V Power Dissipation (Max): 100W (Tc) Supplier Device Package: LDPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V |
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RJK5012DPP-E0#T2 | Renesas Electronics America Inc |
Description: MOSFET N-CH 500V 12A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 620mOhm @ 6A, 10V Power Dissipation (Max): 30W (Tc) Supplier Device Package: TO-220FP Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V |
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RJK5013DPE-00#J3 | Renesas Electronics America Inc |
Description: MOSFET N-CH 500V 14A 4LDPAK |
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RJK5013DPP-E0#T2 | Renesas Electronics America Inc |
Description: MOSFET N-CH 500V 14A TO220FP |
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RJK5015DPM-00#T1 | Renesas Electronics America Inc |
Description: MOSFET N-CH 500V 25A TO3PFM |
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RJK5018DPK-00#T0 | Renesas Electronics America Inc |
Description: MOSFET N-CH 500V 35A TO3P Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta) Rds On (Max) @ Id, Vgs: 155mOhm @ 17.5A, 10V Power Dissipation (Max): 200W (Tc) Supplier Device Package: TO-3P Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 25 V |
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RJK5026DPP-E0#T2 | Renesas Electronics America Inc |
Description: MOSFET N-CH 500V 6A TO220FP |
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RJK5026DPP-M0#T2 | Renesas Electronics America Inc |
Description: MOSFET N-CH 500V 6A TO220FL |
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RJK5034DPP-E0#T2 | Renesas Electronics America Inc | Description: MOSFET N-CH 500V 1.2A TO220 |
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RJK6018DPK-00#T0 | Renesas Electronics America Inc |
Description: MOSFET N-CH 600V 30A TO3P Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 235mOhm @ 15A, 10V Power Dissipation (Max): 200W (Tc) Supplier Device Package: TO-3P Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 25 V |
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RJK6018DPM-00#T1 | Renesas Electronics America Inc |
Description: MOSFET N-CH 600V 30A TO3PFM Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 235mOhm @ 15A, 10V Power Dissipation (Max): 60W (Tc) Supplier Device Package: TO-3PFM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 25 V |
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RJK6020DPK-00#T0 | Renesas Electronics America Inc |
Description: MOSFET N-CH 600V 32A TO3P |
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RJK6026DPE-00#J3 | Renesas Electronics America Inc |
Description: MOSFET N-CH 600V 5A 4LDPAK Packaging: Tube Package / Case: SC-83 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 2.5A, 10V Power Dissipation (Max): 62.5W (Tc) Supplier Device Package: LDPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V |
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RJK6032DPD-00#J2 | Renesas Electronics America Inc |
Description: MOSFET N-CH 600V 3A MP3A Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 4.3Ohm @ 1.5A, 10V Power Dissipation (Max): 40.3W (Tc) Supplier Device Package: MP-3A Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 285 pF @ 25 V |
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RJK6032DPH-E0#T2 | Renesas Electronics America Inc |
Description: MOSFET N-CH 600V 3A TO251 |
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RJL5012DPP-M0#T2 | Renesas Electronics America Inc |
Description: MOSFET N-CH 500V 12A TO220FL |
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| R5F5630ACDFB#V0 |
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Виробник: Renesas Electronics America Inc
Description: IC MCU 32BIT 768KB FLASH 144LQFP
Description: IC MCU 32BIT 768KB FLASH 144LQFP
товар відсутній
| R5F5630BCDFP#V0 |
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Виробник: Renesas Electronics America Inc
Description: IC MCU 32BIT 1MB FLASH 100LQFP
Description: IC MCU 32BIT 1MB FLASH 100LQFP
товар відсутній
| R5F5630BDDFB#V0 |
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Виробник: Renesas Electronics America Inc
Description: IC MCU 32BIT 1MB FLASH 144LQFP
Description: IC MCU 32BIT 1MB FLASH 144LQFP
товар відсутній
| R5F5630BDDFP#V0 |
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Виробник: Renesas Electronics America Inc
Description: IC MCU 32BIT 1MB FLASH 100LQFP
Description: IC MCU 32BIT 1MB FLASH 100LQFP
товар відсутній
| R5F5630DCDFP#V0 |
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Виробник: Renesas Electronics America Inc
Description: IC MCU 32BIT 1.5MB FLASH 100LQFP
Description: IC MCU 32BIT 1.5MB FLASH 100LQFP
товар відсутній
| R5F5630DDDFB#V0 |
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Виробник: Renesas Electronics America Inc
Description: IC MCU 32BIT 1.5MB FLASH 144LQFP
Description: IC MCU 32BIT 1.5MB FLASH 144LQFP
товар відсутній
| R5F5630ECDFB#V0 |
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Виробник: Renesas Electronics America Inc
Description: IC MCU 32BIT 2MB FLASH 144LQFP
Description: IC MCU 32BIT 2MB FLASH 144LQFP
товар відсутній
| R5F5631ACDFB#V0 |
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Виробник: Renesas Electronics America Inc
Description: IC MCU 32BIT 768KB FLASH 144LQFP
Description: IC MCU 32BIT 768KB FLASH 144LQFP
товар відсутній
| R5F5631ADDFB#V0 |
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Виробник: Renesas Electronics America Inc
Description: IC MCU 32BIT 768KB FLASH 144LQFP
Description: IC MCU 32BIT 768KB FLASH 144LQFP
товар відсутній
| R5F5631BCDBG#U0 |
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Виробник: Renesas Electronics America Inc
Description: IC MCU 32BIT 1MB FLASH 176LFBGA
Description: IC MCU 32BIT 1MB FLASH 176LFBGA
товар відсутній
| R5F5631BCDFB#V0 |
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Виробник: Renesas Electronics America Inc
Description: IC MCU 32BIT 1MB FLASH 144LQFP
Description: IC MCU 32BIT 1MB FLASH 144LQFP
товар відсутній
| R5F5631BCDFC#V0 |
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Виробник: Renesas Electronics America Inc
Description: IC MCU 32BIT 1MB FLASH 176LFQFP
Description: IC MCU 32BIT 1MB FLASH 176LFQFP
товар відсутній
| R5F5631BCDFP#V0 |
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Виробник: Renesas Electronics America Inc
Description: IC MCU 32BIT 1MB FLASH 100LQFP
Description: IC MCU 32BIT 1MB FLASH 100LQFP
товар відсутній
| R5F5631ECDFB#V0 |
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Виробник: Renesas Electronics America Inc
Description: IC MCU 32BIT 2MB FLASH 144LQFP
Description: IC MCU 32BIT 2MB FLASH 144LQFP
на замовлення 8 шт:
термін постачання 21-31 дні (днів)| R5F5631ECDFC#V0 |
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Виробник: Renesas Electronics America Inc
Description: IC MCU 32BIT 2MB FLASH 176LFQFP
Description: IC MCU 32BIT 2MB FLASH 176LFQFP
на замовлення 149 шт:
термін постачання 21-31 дні (днів)| R5F5631EDDFB#V0 |
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Виробник: Renesas Electronics America Inc
Description: IC MCU 32BIT 2MB FLASH 144LQFP
Description: IC MCU 32BIT 2MB FLASH 144LQFP
товар відсутній
| R5F563NACDBG#U0 |
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Виробник: Renesas Electronics America Inc
Description: IC MCU 32BIT 768KB FLSH 176LFBGA
Description: IC MCU 32BIT 768KB FLSH 176LFBGA
товар відсутній
| R5F563NACDFP#V0 |
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Виробник: Renesas Electronics America Inc
Description: IC MCU 32BIT 768KB FLASH 100LQFP
Description: IC MCU 32BIT 768KB FLASH 100LQFP
товар відсутній
| R5F563NADDFB#V0 |
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Виробник: Renesas Electronics America Inc
Description: IC MCU 32BIT 768KB FLASH 144LQFP
Description: IC MCU 32BIT 768KB FLASH 144LQFP
товар відсутній
| R5F563NADDFC#V0 |
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Виробник: Renesas Electronics America Inc
Description: IC MCU 32BIT 768KB FLSH 176LFQFP
Description: IC MCU 32BIT 768KB FLSH 176LFQFP
товар відсутній
| R5F563NBCDBG#U0 |
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Виробник: Renesas Electronics America Inc
Description: IC MCU 32BIT 1MB FLASH 176LFBGA
Description: IC MCU 32BIT 1MB FLASH 176LFBGA
товар відсутній
| R5F563NBCDFB#V0 |
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Виробник: Renesas Electronics America Inc
Description: IC MCU 32BIT 1MB FLASH 144LQFP
Description: IC MCU 32BIT 1MB FLASH 144LQFP
товар відсутній
| R5F563NBCDFC#V0 |
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Виробник: Renesas Electronics America Inc
Description: IC MCU 32BIT 1MB FLASH 176LFQFP
Description: IC MCU 32BIT 1MB FLASH 176LFQFP
товар відсутній
| R5F563NBDDFB#V0 |
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Виробник: Renesas Electronics America Inc
Description: IC MCU 32BIT 1MB FLASH 144LQFP
Description: IC MCU 32BIT 1MB FLASH 144LQFP
товар відсутній
| R5F563NBDDFP#V0 |
|
Виробник: Renesas Electronics America Inc
Description: IC MCU 32BIT 1MB FLASH 100LFQFP
Description: IC MCU 32BIT 1MB FLASH 100LFQFP
товар відсутній
| R5F563NDDDFC#V0 |
|
Виробник: Renesas Electronics America Inc
Description: IC MCU 32BIT 1.5MB FLSH 176LFQFP
Description: IC MCU 32BIT 1.5MB FLSH 176LFQFP
товар відсутній
| R5F563NECDFC#V0 |
|
Виробник: Renesas Electronics America Inc
Description: IC MCU 32BIT 2MB FLASH 176LFQFP
Description: IC MCU 32BIT 2MB FLASH 176LFQFP
товар відсутній
| R5F563T4EDFL#V0 |
|
Виробник: Renesas Electronics America Inc
Description: IC MCU 32BIT 32KB FLASH 48LQFP
Description: IC MCU 32BIT 32KB FLASH 48LQFP
товар відсутній
| R5F563T4EDFM#V0 |
|
Виробник: Renesas Electronics America Inc
Description: IC MCU 32BIT 32KB FLASH 64LQFP
Description: IC MCU 32BIT 32KB FLASH 64LQFP
товар відсутній
| R5F563T6EDFL#V0 |
|
Виробник: Renesas Electronics America Inc
Description: IC MCU 32BIT 64KB FLASH 48LQFP
Description: IC MCU 32BIT 64KB FLASH 48LQFP
товар відсутній
| R5F563TBBDFB#V0 |
|
Виробник: Renesas Electronics America Inc
Description: IC MCU 32BIT 256KB FLASH 144LQFP
Description: IC MCU 32BIT 256KB FLASH 144LQFP
товар відсутній
| R5F563TBEDFB#V0 |
|
Виробник: Renesas Electronics America Inc
Description: IC MCU 32BIT 256KB FLASH 144LQFP
Description: IC MCU 32BIT 256KB FLASH 144LQFP
товар відсутній
| R5F64178DFD#UB |
|
Виробник: Renesas Electronics America Inc
Description: IC MCU 16/32BIT 768KB 144LFQFP
Description: IC MCU 16/32BIT 768KB 144LFQFP
товар відсутній
| R5F64189HDFD#UA |
|
Виробник: Renesas Electronics America Inc
Description: IC MCU 16/32B 1MB FLASH 144LFQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 63K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 8K x 8
Core Processor: R32C/100
Data Converters: A/D 34x10b; D/A 2x8b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, IEBus, UART/USART
Peripherals: DMA, LVD, PWM, WDT
Supplier Device Package: 144-LFQFP (20x20)
Number of I/O: 120
DigiKey Programmable: Not Verified
Description: IC MCU 16/32B 1MB FLASH 144LFQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 63K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 8K x 8
Core Processor: R32C/100
Data Converters: A/D 34x10b; D/A 2x8b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, IEBus, UART/USART
Peripherals: DMA, LVD, PWM, WDT
Supplier Device Package: 144-LFQFP (20x20)
Number of I/O: 120
DigiKey Programmable: Not Verified
товар відсутній
| R5S72642W144FP#U0 |
|
Виробник: Renesas Electronics America Inc
Description: IC MCU 32BIT ROMLESS 208LQFP
Description: IC MCU 32BIT ROMLESS 208LQFP
товар відсутній
| R5S72643P144FP#UZ |
|
Виробник: Renesas Electronics America Inc
Description: IC MCU 32BIT ROMLESS 208LQFP
Packaging: Tray
Package / Case: 208-LQFP
Mounting Type: Surface Mount
Speed: 144MHz
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: SH2A-FPU
Data Converters: A/D 8x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.1V ~ 3.6V
Connectivity: CANbus, I²C, SCI, SD, SIO, SPI, USB
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 208-LFQFP (28x28)
Part Status: Obsolete
Number of I/O: 115
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT ROMLESS 208LQFP
Packaging: Tray
Package / Case: 208-LQFP
Mounting Type: Surface Mount
Speed: 144MHz
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: SH2A-FPU
Data Converters: A/D 8x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.1V ~ 3.6V
Connectivity: CANbus, I²C, SCI, SD, SIO, SPI, USB
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 208-LFQFP (28x28)
Part Status: Obsolete
Number of I/O: 115
DigiKey Programmable: Not Verified
товар відсутній
| RJK03M4DPA-00#J5A |
|
Виробник: Renesas Electronics America Inc
Description: MOSFET N-CH 30V 35A 8WPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 17.5A, 10V
Power Dissipation (Max): 30W (Tc)
Supplier Device Package: 8-WPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 10 V
Description: MOSFET N-CH 30V 35A 8WPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 17.5A, 10V
Power Dissipation (Max): 30W (Tc)
Supplier Device Package: 8-WPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 55.57 грн |
| RJK03M5DPA-00#J5A |
|
Виробник: Renesas Electronics America Inc
Description: MOSFET N-CH 30V 30A 8WPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V
Power Dissipation (Max): 30W (Tc)
Supplier Device Package: 8-WPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 10 V
Description: MOSFET N-CH 30V 30A 8WPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V
Power Dissipation (Max): 30W (Tc)
Supplier Device Package: 8-WPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 51.17 грн |
| RJK2057DPA-00#J0 |
|
Виробник: Renesas Electronics America Inc
Description: MOSFET N-CH 200V 20A 8WPAK
Description: MOSFET N-CH 200V 20A 8WPAK
товар відсутній
| RJK4002DJE-00#Z0 |
|
Виробник: Renesas Electronics America Inc
Description: MOSFET N-CH 400V 3A TO92MOD
Description: MOSFET N-CH 400V 3A TO92MOD
товар відсутній
| RJK4002DPP-M0#T2 |
|
Виробник: Renesas Electronics America Inc
Description: MOSFET N-CH 400V 3A TO220FL
Description: MOSFET N-CH 400V 3A TO220FL
товар відсутній
| RJK4006DPP-M0#T2 |
|
Виробник: Renesas Electronics America Inc
Description: MOSFET N-CH 400V 8A TO220FL
Description: MOSFET N-CH 400V 8A TO220FL
товар відсутній
| RJK4512DPE-00#J3 |
|
Виробник: Renesas Electronics America Inc
Description: MOSFET N-CH 450V 14A 4LDPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-83
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 510mOhm @ 7A, 10V
Power Dissipation (Max): 100W (Tc)
Supplier Device Package: LDPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 450 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Description: MOSFET N-CH 450V 14A 4LDPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-83
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 510mOhm @ 7A, 10V
Power Dissipation (Max): 100W (Tc)
Supplier Device Package: LDPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 450 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
товар відсутній
| RJK4514DPK-00#T0 |
|
Виробник: Renesas Electronics America Inc
Description: MOSFET N-CH 450V 22A TO3P
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 11A, 10V
Power Dissipation (Max): 150W (Tc)
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 450 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Description: MOSFET N-CH 450V 22A TO3P
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 11A, 10V
Power Dissipation (Max): 150W (Tc)
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 450 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
товар відсутній
| RJK5012DPE-00#J3 |
|
Виробник: Renesas Electronics America Inc
Description: MOSFET N-CH 500V 12A 4LDPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-83
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 620mOhm @ 6A, 10V
Power Dissipation (Max): 100W (Tc)
Supplier Device Package: LDPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Description: MOSFET N-CH 500V 12A 4LDPAK
Packaging: Tape & Reel (TR)
Package / Case: SC-83
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 620mOhm @ 6A, 10V
Power Dissipation (Max): 100W (Tc)
Supplier Device Package: LDPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
товар відсутній
| RJK5012DPP-E0#T2 |
|
Виробник: Renesas Electronics America Inc
Description: MOSFET N-CH 500V 12A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 620mOhm @ 6A, 10V
Power Dissipation (Max): 30W (Tc)
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Description: MOSFET N-CH 500V 12A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 620mOhm @ 6A, 10V
Power Dissipation (Max): 30W (Tc)
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
товар відсутній
| RJK5013DPE-00#J3 |
|
Виробник: Renesas Electronics America Inc
Description: MOSFET N-CH 500V 14A 4LDPAK
Description: MOSFET N-CH 500V 14A 4LDPAK
товар відсутній
| RJK5013DPP-E0#T2 |
|
Виробник: Renesas Electronics America Inc
Description: MOSFET N-CH 500V 14A TO220FP
Description: MOSFET N-CH 500V 14A TO220FP
товар відсутній
| RJK5015DPM-00#T1 |
|
Виробник: Renesas Electronics America Inc
Description: MOSFET N-CH 500V 25A TO3PFM
Description: MOSFET N-CH 500V 25A TO3PFM
товар відсутній
| RJK5018DPK-00#T0 |
|
Виробник: Renesas Electronics America Inc
Description: MOSFET N-CH 500V 35A TO3P
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 17.5A, 10V
Power Dissipation (Max): 200W (Tc)
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 25 V
Description: MOSFET N-CH 500V 35A TO3P
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 17.5A, 10V
Power Dissipation (Max): 200W (Tc)
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 25 V
товар відсутній
| RJK5026DPP-E0#T2 |
|
Виробник: Renesas Electronics America Inc
Description: MOSFET N-CH 500V 6A TO220FP
Description: MOSFET N-CH 500V 6A TO220FP
товар відсутній
| RJK5026DPP-M0#T2 |
|
Виробник: Renesas Electronics America Inc
Description: MOSFET N-CH 500V 6A TO220FL
Description: MOSFET N-CH 500V 6A TO220FL
товар відсутній
| RJK5034DPP-E0#T2 |
Виробник: Renesas Electronics America Inc
Description: MOSFET N-CH 500V 1.2A TO220
Description: MOSFET N-CH 500V 1.2A TO220
товар відсутній
| RJK6018DPK-00#T0 |
|
Виробник: Renesas Electronics America Inc
Description: MOSFET N-CH 600V 30A TO3P
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 235mOhm @ 15A, 10V
Power Dissipation (Max): 200W (Tc)
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 25 V
Description: MOSFET N-CH 600V 30A TO3P
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 235mOhm @ 15A, 10V
Power Dissipation (Max): 200W (Tc)
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 25 V
товар відсутній
| RJK6018DPM-00#T1 |
|
Виробник: Renesas Electronics America Inc
Description: MOSFET N-CH 600V 30A TO3PFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 235mOhm @ 15A, 10V
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: TO-3PFM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 25 V
Description: MOSFET N-CH 600V 30A TO3PFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 235mOhm @ 15A, 10V
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: TO-3PFM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 25 V
товар відсутній
| RJK6020DPK-00#T0 |
|
Виробник: Renesas Electronics America Inc
Description: MOSFET N-CH 600V 32A TO3P
Description: MOSFET N-CH 600V 32A TO3P
товар відсутній
| RJK6026DPE-00#J3 |
|
Виробник: Renesas Electronics America Inc
Description: MOSFET N-CH 600V 5A 4LDPAK
Packaging: Tube
Package / Case: SC-83
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 2.5A, 10V
Power Dissipation (Max): 62.5W (Tc)
Supplier Device Package: LDPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Description: MOSFET N-CH 600V 5A 4LDPAK
Packaging: Tube
Package / Case: SC-83
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 2.5A, 10V
Power Dissipation (Max): 62.5W (Tc)
Supplier Device Package: LDPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
товар відсутній
| RJK6032DPD-00#J2 |
|
Виробник: Renesas Electronics America Inc
Description: MOSFET N-CH 600V 3A MP3A
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 4.3Ohm @ 1.5A, 10V
Power Dissipation (Max): 40.3W (Tc)
Supplier Device Package: MP-3A
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 285 pF @ 25 V
Description: MOSFET N-CH 600V 3A MP3A
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 4.3Ohm @ 1.5A, 10V
Power Dissipation (Max): 40.3W (Tc)
Supplier Device Package: MP-3A
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 285 pF @ 25 V
товар відсутній
| RJK6032DPH-E0#T2 |
|
Виробник: Renesas Electronics America Inc
Description: MOSFET N-CH 600V 3A TO251
Description: MOSFET N-CH 600V 3A TO251
товар відсутній
| RJL5012DPP-M0#T2 |
|
Виробник: Renesas Electronics America Inc
Description: MOSFET N-CH 500V 12A TO220FL
Description: MOSFET N-CH 500V 12A TO220FL
товар відсутній