YQ20NL10SETL ROHM Semiconductor
Виробник: ROHM Semiconductor
Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD: The YQ20NL10SE is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable
Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD: The YQ20NL10SE is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable
на замовлення 1998 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 125.91 грн |
| 10+ | 103.02 грн |
| 100+ | 71.24 грн |
| 500+ | 60.59 грн |
| 1000+ | 50.22 грн |
| 2000+ | 48.25 грн |
| 5000+ | 47.33 грн |
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Технічний опис YQ20NL10SETL ROHM Semiconductor
Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD: The YQ20NL10SE is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable.