YQ20BGE10SDTL ROHM Semiconductor
Виробник: ROHM Semiconductor
Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 20A, TO-252, Highly Efficient SBD: The YQ20BGE10SD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable
Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 20A, TO-252, Highly Efficient SBD: The YQ20BGE10SD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable
на замовлення 4947 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
4+ | 105.74 грн |
10+ | 84.38 грн |
100+ | 57.4 грн |
500+ | 48.63 грн |
1000+ | 43.95 грн |
2500+ | 37.33 грн |
5000+ | 35.54 грн |
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Технічний опис YQ20BGE10SDTL ROHM Semiconductor
Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 20A, TO-252, Highly Efficient SBD: The YQ20BGE10SD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable.