WML08N65C4 WAYON
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 3.6A; Idm: 12A; 26W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.6A
Pulsed drain current: 12A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: THT
Gate charge: 7.3nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 3.6A; Idm: 12A; 26W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.6A
Pulsed drain current: 12A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: THT
Gate charge: 7.3nC
Kind of package: tube
Kind of channel: enhanced
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Технічний опис WML08N65C4 WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 3.6A; Idm: 12A; 26W, Type of transistor: N-MOSFET, Technology: WMOS™ C4, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 3.6A, Pulsed drain current: 12A, Power dissipation: 26W, Case: TO220FP, Gate-source voltage: ±30V, On-state resistance: 780mΩ, Mounting: THT, Gate charge: 7.3nC, Kind of package: tube, Kind of channel: enhanced.