WB1008T75NSJ Cal-Chip Electronics, Inc.
Виробник: Cal-Chip Electronics, Inc.
Description: WW IND1008 75NH 5%
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 1008 (2520 Metric)
Size / Dimension: 0.110" L x 0.079" W (2.79mm x 2.00mm)
Mounting Type: Surface Mount
Shielding: Unshielded
Type: Drum Core, Wirewound
Operating Temperature: -40°C ~ 125°C
DC Resistance (DCR): 210mOhm Max
Q @ Freq: 60 @ 350MHz
Frequency - Self Resonant: 1.1GHz
Material - Core: Ceramic
Inductance Frequency - Test: 50 MHz
Supplier Device Package: 1008
Height - Seated (Max): 0.083" (2.10mm)
Part Status: Active
Inductance: 75 nH
Current Rating (Amps): 1 A
Description: WW IND1008 75NH 5%
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 1008 (2520 Metric)
Size / Dimension: 0.110" L x 0.079" W (2.79mm x 2.00mm)
Mounting Type: Surface Mount
Shielding: Unshielded
Type: Drum Core, Wirewound
Operating Temperature: -40°C ~ 125°C
DC Resistance (DCR): 210mOhm Max
Q @ Freq: 60 @ 350MHz
Frequency - Self Resonant: 1.1GHz
Material - Core: Ceramic
Inductance Frequency - Test: 50 MHz
Supplier Device Package: 1008
Height - Seated (Max): 0.083" (2.10mm)
Part Status: Active
Inductance: 75 nH
Current Rating (Amps): 1 A
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Технічний опис WB1008T75NSJ Cal-Chip Electronics, Inc.
Description: WW IND1008 75NH 5%, Tolerance: ±5%, Packaging: Tape & Reel (TR), Package / Case: 1008 (2520 Metric), Size / Dimension: 0.110" L x 0.079" W (2.79mm x 2.00mm), Mounting Type: Surface Mount, Shielding: Unshielded, Type: Drum Core, Wirewound, Operating Temperature: -40°C ~ 125°C, DC Resistance (DCR): 210mOhm Max, Q @ Freq: 60 @ 350MHz, Frequency - Self Resonant: 1.1GHz, Material - Core: Ceramic, Inductance Frequency - Test: 50 MHz, Supplier Device Package: 1008, Height - Seated (Max): 0.083" (2.10mm), Part Status: Active, Inductance: 75 nH, Current Rating (Amps): 1 A.