W1980JK180 IXYS
Виробник: IXYS
Description: DIODE GEN PURP 1.8KV 1980A W113
Packaging: Box
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1980A
Supplier Device Package: W113
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.12 V @ 1000 A
Current - Reverse Leakage @ Vr: 30 mA @ 1800 V
Description: DIODE GEN PURP 1.8KV 1980A W113
Packaging: Box
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1980A
Supplier Device Package: W113
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.12 V @ 1000 A
Current - Reverse Leakage @ Vr: 30 mA @ 1800 V
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Технічний опис W1980JK180 IXYS
Description: DIODE GEN PURP 1.8KV 1980A W113, Packaging: Box, Package / Case: DO-200AB, B-PUK, Mounting Type: Clamp On, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 1980A, Supplier Device Package: W113, Operating Temperature - Junction: -40°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1800 V, Voltage - Forward (Vf) (Max) @ If: 1.12 V @ 1000 A, Current - Reverse Leakage @ Vr: 30 mA @ 1800 V.