VS-GT400LH060N Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes DivisionDescription: MODULES IGBT - DIAP IGBT
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Double INT-A-PAK
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 492 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 1.363 kW
Current - Collector Cutoff (Max): 20 µA
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Технічний опис VS-GT400LH060N Vishay General Semiconductor - Diodes Division
Description: MODULES IGBT - DIAP IGBT, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single Chopper, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 400A, NTC Thermistor: No, Supplier Device Package: Double INT-A-PAK, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 492 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 1.363 kW, Current - Collector Cutoff (Max): 20 µA.