V6PWM12C-M3/I Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes DivisionDescription: DIODE ARR SCHOT 120V 3A SLIMDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Current - Reverse Leakage @ Vr: 70 µA @ 120 V
Qualification: AEC-Q101
товар відсутній
Відгуки про товар
Написати відгук
Технічний опис V6PWM12C-M3/I Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 120V 3A SLIMDPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 3A, Supplier Device Package: SlimDPAK, Operating Temperature - Junction: -40°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 120 V, Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A, Current - Reverse Leakage @ Vr: 70 µA @ 120 V, Qualification: AEC-Q101.