V30K45-M3/I Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes DivisionDescription: DIODE SCHOTTKY 45V 30A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 4000pF @ 4V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 30 A
Current - Reverse Leakage @ Vr: 2 mA @ 45 V
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Технічний опис V30K45-M3/I Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 30A FLATPAK, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 4000pF @ 4V, 1MHz, Current - Average Rectified (Io): 30A, Supplier Device Package: FlatPAK (5x6), Operating Temperature - Junction: -40°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 45 V, Voltage - Forward (Vf) (Max) @ If: 630 mV @ 30 A, Current - Reverse Leakage @ Vr: 2 mA @ 45 V.