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V20PM63-M3/I Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes DivisionDescription: DIODE SCHOTTKY 60V 4.9A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3400pF @ 4V, 1MHz
Current - Average Rectified (Io): 4.9A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 20 A
Current - Reverse Leakage @ Vr: 40 µA @ 60 V
на замовлення 6500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6500+ | 28.64 грн |
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Технічний опис V20PM63-M3/I Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 4.9A TO277A, Packaging: Tape & Reel (TR), Package / Case: TO-277, 3-PowerDFN, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 3400pF @ 4V, 1MHz, Current - Average Rectified (Io): 4.9A, Supplier Device Package: TO-277A (SMPC), Operating Temperature - Junction: -40°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 60 V, Voltage - Forward (Vf) (Max) @ If: 680 mV @ 20 A, Current - Reverse Leakage @ Vr: 40 µA @ 60 V.