UPA2803T1L-E2-AY Renesas Electronics America Inc
Виробник: Renesas Electronics America Inc
Description: MOSFET N-CH 20V 20A 8DFN
Packaging: Bulk
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: 8-DFN3333 (3.3x3.3)
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 10 V
Description: MOSFET N-CH 20V 20A 8DFN
Packaging: Bulk
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: 8-DFN3333 (3.3x3.3)
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 10 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 232+ | 98.43 грн |
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Технічний опис UPA2803T1L-E2-AY Renesas Electronics America Inc
Description: MOSFET N-CH 20V 20A 8DFN, Packaging: Bulk, Package / Case: 8-VDFN Exposed Pad, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 4.5V, Vgs(th) (Max) @ Id: 1.5V @ 1mA, Supplier Device Package: 8-DFN3333 (3.3x3.3), Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4 V, Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 10 V.