TSM8568CS Taiwan Semiconductor Corporation


TSM8568CS_B1611.pdf Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N/P-CH 30V 15A/13A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 6W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc), 13A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 646pF @ 15V, 1089pF @ 15V
Rds On (Max) @ Id, Vgs: 16mOhm @ 8A, 10V, 24mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V, 11nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
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Технічний опис TSM8568CS Taiwan Semiconductor Corporation

Description: MOSFET N/P-CH 30V 15A/13A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 6W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), 13A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 646pF @ 15V, 1089pF @ 15V, Rds On (Max) @ Id, Vgs: 16mOhm @ 8A, 10V, 24mOhm @ 7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V, 11nC @ 4.5V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOP.