TSM6502CR Taiwan Semiconductor Corporation
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N/P-CH 60V 24A/18A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 40W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc), 18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1159pF @ 30V, 930pF @ 30V
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V, 68mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 4.5V, 9.5nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Description: MOSFET N/P-CH 60V 24A/18A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 40W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc), 18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1159pF @ 30V, 930pF @ 30V
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V, 68mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 4.5V, 9.5nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
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Технічний опис TSM6502CR Taiwan Semiconductor Corporation
Description: MOSFET N/P-CH 60V 24A/18A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 40W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), 18A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1159pF @ 30V, 930pF @ 30V, Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V, 68mOhm @ 4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 4.5V, 9.5nC @ 4.5V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-PDFN (5x6).