TSM035NB04CZ Taiwan Semiconductor Corporation


TSM035NB04CZ_A2008.pdf Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 40V 18A/157A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 157A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 18A, 10V
Power Dissipation (Max): 2W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6990 pF @ 20 V
на замовлення 335 шт:

термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+314.36 грн
10+ 272.09 грн
100+ 222.9 грн
Відгуки про товар
Написати відгук

Технічний опис TSM035NB04CZ Taiwan Semiconductor Corporation

Description: MOSFET N-CH 40V 18A/157A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 157A (Tc), Rds On (Max) @ Id, Vgs: 3.5mOhm @ 18A, 10V, Power Dissipation (Max): 2W (Ta), 156W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6990 pF @ 20 V.