на замовлення 1605 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
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5+ | 74.19 грн |
10+ | 50.3 грн |
100+ | 28.63 грн |
500+ | 22.16 грн |
1000+ | 20.07 грн |
3000+ | 16.69 грн |
6000+ | 15.68 грн |
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Технічний опис TPN11003NL,LQ Toshiba
Description: MOSFET N CH 30V 11A 8TSON-ADV, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 11mOhm @ 5.5A, 10V, Power Dissipation (Max): 700mW (Ta), 19W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 100µA, Supplier Device Package: 8-TSON Advance (3.1x3.1), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V.
Інші пропозиції TPN11003NL,LQ
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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TPN11003NL,LQ | Виробник : Toshiba | Trans MOSFET N-CH Si 30V 31A 8-Pin TSON EP Advance T/R |
товар відсутній |
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TPN11003NL,LQ | Виробник : Toshiba | Trans MOSFET N-CH Si 30V 31A 8-Pin TSON EP Advance T/R |
товар відсутній |
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TPN11003NL,LQ | Виробник : Toshiba Semiconductor and Storage |
Description: MOSFET N CH 30V 11A 8TSON-ADV Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 5.5A, 10V Power Dissipation (Max): 700mW (Ta), 19W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 100µA Supplier Device Package: 8-TSON Advance (3.1x3.1) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V |
товар відсутній |
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TPN11003NL,LQ | Виробник : Toshiba Semiconductor and Storage |
Description: MOSFET N CH 30V 11A 8TSON-ADV Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 5.5A, 10V Power Dissipation (Max): 700mW (Ta), 19W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 100µA Supplier Device Package: 8-TSON Advance (3.1x3.1) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V |
товар відсутній |