TN0604N3-G-P013 Microchip Technology
на замовлення 516 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 118.33 грн |
| 100+ | 97.61 грн |
| 500+ | 76.25 грн |
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Технічний опис TN0604N3-G-P013 Microchip Technology
Description: MOSFET N-CH 40V 700MA TO92-3, Packaging: Tape & Box (TB), Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 700mA (Tj), Rds On (Max) @ Id, Vgs: 750mOhm @ 1.5A, 10V, Power Dissipation (Max): 740mW (Ta), Vgs(th) (Max) @ Id: 1.6V @ 1mA, Supplier Device Package: TO-92-3, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 20 V.
Інші пропозиції TN0604N3-G-P013
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| TN0604N3-G-P013 | Виробник : MICROCHIP TECHNOLOGY |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 700mA; Idm: 4.6A; 740mW; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 0.7A Pulsed drain current: 4.6A Power dissipation: 0.74W Case: TO92 Gate-source voltage: ±20V On-state resistance: 0.75Ω Mounting: THT Kind of package: Ammo Pack Kind of channel: enhanced кількість в упаковці: 1 шт |
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,TO-226_straightlead.jpg "TN0604N3-G-P013") |
TN0604N3-G-P013 | Виробник : Microchip Technology |
Description: MOSFET N-CH 40V 700MA TO92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 700mA (Tj) Rds On (Max) @ Id, Vgs: 750mOhm @ 1.5A, 10V Power Dissipation (Max): 740mW (Ta) Vgs(th) (Max) @ Id: 1.6V @ 1mA Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 20 V |
товар відсутній |
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| TN0604N3-G-P013 | Виробник : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 700mA; Idm: 4.6A; 740mW; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 0.7A Pulsed drain current: 4.6A Power dissipation: 0.74W Case: TO92 Gate-source voltage: ±20V On-state resistance: 0.75Ω Mounting: THT Kind of package: Ammo Pack Kind of channel: enhanced |
товар відсутній |