TN0106N3-G-P013 Microchip Technology
на замовлення 1930 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
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5+ | 73.35 грн |
10+ | 71.14 грн |
25+ | 60.42 грн |
100+ | 60.14 грн |
250+ | 59.56 грн |
1000+ | 58.84 грн |
4000+ | 58.77 грн |
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Технічний опис TN0106N3-G-P013 Microchip Technology
Description: MOSFET N-CH 60V 350MA TO92-3, Packaging: Tape & Box (TB), Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 350mA (Tj), Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V, Power Dissipation (Max): 1W (Tc), Vgs(th) (Max) @ Id: 2V @ 500µA, Supplier Device Package: TO-92-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V.
Інші пропозиції TN0106N3-G-P013
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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TN0106N3-G-P013 | Виробник : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 350mA; Idm: 2A; 1W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.35A Pulsed drain current: 2A Power dissipation: 1W Case: TO92 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: THT Kind of package: Ammo Pack Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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TN0106N3-G-P013 | Виробник : Microchip Technology |
Description: MOSFET N-CH 60V 350MA TO92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 350mA (Tj) Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 2V @ 500µA Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V |
товар відсутній |
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TN0106N3-G-P013 | Виробник : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 350mA; Idm: 2A; 1W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.35A Pulsed drain current: 2A Power dissipation: 1W Case: TO92 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: THT Kind of package: Ammo Pack Kind of channel: enhanced |
товар відсутній |