Технічний опис TK6A65W,S5X Toshiba
Description: MOSFET N-CH 650V 5.8A TO220SIS, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), Rds On (Max) @ Id, Vgs: 1Ohm @ 2.9A, 10V, Power Dissipation (Max): 30W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 180µA, Supplier Device Package: TO-220SIS, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 300 V.
Інші пропозиції TK6A65W,S5X
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TK6A65W,S5X | Виробник : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 650V 5.8A TO220SIS Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Rds On (Max) @ Id, Vgs: 1Ohm @ 2.9A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 180µA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 300 V |
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TK6A65W,S5X | Виробник : Toshiba | MOSFETs Power MOSFET N-Channel |
товар відсутній |