SSM6N57NU,LF Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 4A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V
Rds On (Max) @ Id, Vgs: 46mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-µDFN (2x2)
Part Status: Active
Description: MOSFET 2N-CH 30V 4A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V
Rds On (Max) @ Id, Vgs: 46mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-µDFN (2x2)
Part Status: Active
на замовлення 126000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3000+ | 9.54 грн |
6000+ | 8.38 грн |
9000+ | 7.97 грн |
15000+ | 7.05 грн |
21000+ | 6.79 грн |
30000+ | 6.54 грн |
75000+ | 6.29 грн |
Відгуки про товар
Написати відгук
Технічний опис SSM6N57NU,LF Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 4A 6DFN, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 4A, Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V, Rds On (Max) @ Id, Vgs: 46mOhm @ 2A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V, Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: 6-µDFN (2x2), Part Status: Active.
Інші пропозиції SSM6N57NU,LF за ціною від 7.19 грн до 42.02 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
SSM6N57NU,LF | Виробник : Toshiba | MOSFETs 2N-Ch U-MOS VI FET ID 4A 30VDSS |
на замовлення 35740 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||||
SSM6N57NU,LF | Виробник : Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 30V 4A 6DFN Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V Rds On (Max) @ Id, Vgs: 46mOhm @ 2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: 6-µDFN (2x2) Part Status: Active |
на замовлення 129658 шт: термін постачання 21-31 дні (днів) |
|