SRAF830H Taiwan Semiconductor Corporation
Виробник: Taiwan Semiconductor Corporation
Description: 8A, 30V, PLANAR SCHOTTKY
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Qualification: AEC-Q101
Description: 8A, 30V, PLANAR SCHOTTKY
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Qualification: AEC-Q101
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Технічний опис SRAF830H Taiwan Semiconductor Corporation
Description: 8A, 30V, PLANAR SCHOTTKY, Packaging: Tube, Package / Case: TO-220-2 Full Pack, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Schottky, Current - Average Rectified (Io): 8A, Supplier Device Package: ITO-220AC, Operating Temperature - Junction: -55°C ~ 125°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 30 V, Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A, Current - Reverse Leakage @ Vr: 500 µA @ 30 V, Qualification: AEC-Q101.