Технічний опис SPU18P06P
Description: MOSFET P-CH 60V 18.6A TO251-3, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 18.6A (Tc), Rds On (Max) @ Id, Vgs: 130mOhm @ 13.2A, 10V, Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: PG-TO251-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V.
Інші пропозиції SPU18P06P
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
SPU18P06P | Виробник : Infineon Technologies |
Description: MOSFET P-CH 60V 18.6A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 18.6A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 13.2A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: PG-TO251-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V |
товар відсутній |