SP8K52FRATB ROHM
Виробник: ROHM
Description: ROHM - SP8K52FRATB - Dual-MOSFET, n-Kanal, 100 V, 100 V, 3 A, 3 A, 0.12 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 3A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
Drain-Source-Spannung Vds, p-Kanal: 100V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 3A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.12ohm
Verlustleistung, p-Kanal: 2W
Drain-Source-Spannung Vds, n-Kanal: 100V
euEccn: NLR
Bauform - Transistor: SOP
Anzahl der Pins: 8Pins
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.12ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 2W
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (23-Jan-2024)
Description: ROHM - SP8K52FRATB - Dual-MOSFET, n-Kanal, 100 V, 100 V, 3 A, 3 A, 0.12 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 3A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
Drain-Source-Spannung Vds, p-Kanal: 100V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 3A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.12ohm
Verlustleistung, p-Kanal: 2W
Drain-Source-Spannung Vds, n-Kanal: 100V
euEccn: NLR
Bauform - Transistor: SOP
Anzahl der Pins: 8Pins
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.12ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 2W
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (23-Jan-2024)
на замовлення 1240 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
100+ | 50.27 грн |
500+ | 41.81 грн |
1000+ | 29.26 грн |
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Технічний опис SP8K52FRATB ROHM
Description: ROHM - SP8K52FRATB - Dual-MOSFET, n-Kanal, 100 V, 100 V, 3 A, 3 A, 0.12 ohm, tariffCode: 85412900, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 3A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, Drain-Source-Spannung Vds, p-Kanal: 100V, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 3A, Drain-Source-Durchgangswiderstand, p-Kanal: 0.12ohm, Verlustleistung, p-Kanal: 2W, Drain-Source-Spannung Vds, n-Kanal: 100V, euEccn: NLR, Bauform - Transistor: SOP, Anzahl der Pins: 8Pins, Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 0.12ohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 2W, Betriebstemperatur, max.: 150°C, SVHC: No SVHC (23-Jan-2024).
Інші пропозиції SP8K52FRATB за ціною від 28.99 грн до 96.03 грн
Фото | Назва | Виробник | Інформація |
Доступність |
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SP8K52FRATB | Виробник : Rohm Semiconductor |
Description: MOSFET 2N-CH 100V 3A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Not For New Designs Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2460 шт: термін постачання 21-31 дні (днів) |
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SP8K52FRATB | Виробник : ROHM Semiconductor | MOSFETs Nch+Nch 100V Vds 3A 0.135Rds(on) 8.5Qg |
на замовлення 411 шт: термін постачання 21-30 дні (днів) |
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SP8K52FRATB | Виробник : ROHM |
Description: ROHM - SP8K52FRATB - Dual-MOSFET, n-Kanal, 100 V, 100 V, 3 A, 3 A, 0.12 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 100V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 3A Drain-Source-Durchgangswiderstand, p-Kanal: 0.12ohm Verlustleistung, p-Kanal: 2W Drain-Source-Spannung Vds, n-Kanal: 100V euEccn: NLR Bauform - Transistor: SOP Anzahl der Pins: 8Pins Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.12ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 2W Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) |
на замовлення 1240 шт: термін постачання 21-31 дні (днів) |
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SP8K52FRATB | Виробник : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 3A; Idm: 12A; 2W; SOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 3A Pulsed drain current: 12A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 8.5nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
товар відсутній |
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SP8K52FRATB | Виробник : Rohm Semiconductor |
Description: MOSFET 2N-CH 100V 3A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Not For New Designs Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |
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SP8K52FRATB | Виробник : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 3A; Idm: 12A; 2W; SOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 3A Pulsed drain current: 12A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 8.5nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
товар відсутній |