SIRA10BDP-T1-GE3 VISHAY
Виробник: VISHAY
Description: VISHAY - SIRA10BDP-T1-GE3 - Leistungs-MOSFET, n-Kanal, 30 V, 60 A, 0.0023 ohm, PowerPAK SO, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 60A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.4V
euEccn: NLR
Verlustleistung: 43W
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0023ohm
SVHC: To Be Advised
Description: VISHAY - SIRA10BDP-T1-GE3 - Leistungs-MOSFET, n-Kanal, 30 V, 60 A, 0.0023 ohm, PowerPAK SO, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 60A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.4V
euEccn: NLR
Verlustleistung: 43W
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0023ohm
SVHC: To Be Advised
на замовлення 9377 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
100+ | 29.21 грн |
500+ | 22.63 грн |
1000+ | 16.12 грн |
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Технічний опис SIRA10BDP-T1-GE3 VISHAY
Description: VISHAY - SIRA10BDP-T1-GE3 - Leistungs-MOSFET, n-Kanal, 30 V, 60 A, 0.0023 ohm, PowerPAK SO, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 30V, rohsCompliant: YES, Dauer-Drainstrom Id: 60A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 2.4V, euEccn: NLR, Verlustleistung: 43W, Bauform - Transistor: PowerPAK SO, Anzahl der Pins: 8Pin(s), Produktpalette: TrenchFET Gen IV, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.0023ohm, SVHC: To Be Advised.
Інші пропозиції SIRA10BDP-T1-GE3 за ціною від 16.12 грн до 63.19 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||
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SIRA10BDP-T1-GE3 | Виробник : VISHAY |
Description: VISHAY - SIRA10BDP-T1-GE3 - Leistungs-MOSFET, n-Kanal, 30 V, 60 A, 0.0023 ohm, PowerPAK SO, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 60A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.4V euEccn: NLR Verlustleistung: 43W Bauform - Transistor: PowerPAK SO Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen IV productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0023ohm SVHC: To Be Advised |
на замовлення 9377 шт: термін постачання 21-31 дні (днів) |
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SIRA10BDP-T1-GE3 | Виробник : Vishay / Siliconix | MOSFETs 30V Vds 20V Vgs PowerPAK SO-8 |
на замовлення 12712 шт: термін постачання 21-30 дні (днів) |
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SIRA10BDP-T1-GE3 | Виробник : Vishay | Trans MOSFET N-CH 30V 60A 8-Pin PowerPAK SO EP T/R |
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SIRA10BDP-T1-GE3 | Виробник : Vishay | Trans MOSFET N-CH 30V 60A 8-Pin PowerPAK SO EP T/R |
товар відсутній |
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SIRA10BDP-T1-GE3 | Виробник : Vishay | Trans MOSFET N-CH 30V 60A 8-Pin PowerPAK SO EP T/R |
товар відсутній |
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SIRA10BDP-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 60A; Idm: 150A; 28W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 60A Pulsed drain current: 150A Power dissipation: 28W Case: PowerPAK® SO8 Gate-source voltage: -16...20V On-state resistance: 5mΩ Mounting: SMD Gate charge: 36.2nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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SIRA10BDP-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 30V 30A/60A PPAK SO8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 10A, 10V Power Dissipation (Max): 5W (Ta), 43W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 36.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 15 V |
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SIRA10BDP-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 30V 30A/60A PPAK SO8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 10A, 10V Power Dissipation (Max): 5W (Ta), 43W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 36.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 15 V |
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SIRA10BDP-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 60A; Idm: 150A; 28W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 60A Pulsed drain current: 150A Power dissipation: 28W Case: PowerPAK® SO8 Gate-source voltage: -16...20V On-state resistance: 5mΩ Mounting: SMD Gate charge: 36.2nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |