SiHH14N65EF-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET N-CH 650V 15A PPAK 8 X 8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 271mOhm @ 7A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1749 pF @ 100 V
Description: MOSFET N-CH 650V 15A PPAK 8 X 8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 271mOhm @ 7A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1749 pF @ 100 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3000+ | 170.01 грн |
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Технічний опис SiHH14N65EF-T1-GE3 Vishay Siliconix
Description: VISHAY - SIHH14N65EF-T1-GE3 - Leistungs-MOSFET, n-Kanal, 650 V, 15 A, 0.236 ohm, PowerPAK, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 650V, rohsCompliant: YES, Dauer-Drainstrom Id: 15A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, usEccn: EAR99, Verlustleistung Pd: 156W, Gate-Source-Schwellenspannung, max.: 4V, euEccn: NLR, Verlustleistung: 156W, Bauform - Transistor: PowerPAK, Qualifizierungsstandard der Automobilindustrie: -, Anzahl der Pins: 5Pin(s), Produktpalette: E Series, productTraceability: No, Wandlerpolarität: n-Kanal, Kanaltyp: n-Kanal, Betriebswiderstand, Rds(on): 0.236ohm, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.236ohm, SVHC: To Be Advised.
Інші пропозиції SiHH14N65EF-T1-GE3 за ціною від 153.74 грн до 430.3 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||
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SIHH14N65EF-T1-GE3 | Виробник : VISHAY |
Description: VISHAY - SIHH14N65EF-T1-GE3 - Leistungs-MOSFET, n-Kanal, 650 V, 15 A, 0.236 ohm, PowerPAK, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 15A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 156W Bauform - Transistor: PowerPAK Anzahl der Pins: 5Pin(s) Produktpalette: E Series productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.236ohm SVHC: To Be Advised |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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SiHH14N65EF-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 650V 15A PPAK 8 X 8 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 271mOhm @ 7A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® 8 x 8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1749 pF @ 100 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SIHH14N65EF-T1-GE3 | Виробник : VISHAY |
Description: VISHAY - SIHH14N65EF-T1-GE3 - Leistungs-MOSFET, n-Kanal, 650 V, 15 A, 0.236 ohm, PowerPAK, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 15A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Verlustleistung Pd: 156W Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 156W Bauform - Transistor: PowerPAK Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 5Pin(s) Produktpalette: E Series productTraceability: No Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.236ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.236ohm SVHC: To Be Advised |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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SIHH14N65EF-T1-GE3 | Виробник : Vishay | Trans MOSFET N-CH 650V 15A 5-Pin PowerPAK EP T/R |
товар відсутній |
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SiHH14N65EF-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 9.5A; Idm: 36A; 156W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 9.5A Pulsed drain current: 36A Power dissipation: 156W Case: PowerPAK® 8x8L Gate-source voltage: ±30V On-state resistance: 271mΩ Mounting: SMD Gate charge: 98nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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SiHH14N65EF-T1-GE3 | Виробник : Vishay / Siliconix | MOSFETs 650V Vds 30V Vgs PowerPAK 8 x 8 |
товар відсутній |
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SiHH14N65EF-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 9.5A; Idm: 36A; 156W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 9.5A Pulsed drain current: 36A Power dissipation: 156W Case: PowerPAK® 8x8L Gate-source voltage: ±30V On-state resistance: 271mΩ Mounting: SMD Gate charge: 98nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |