Технічний опис SIHFR9110TR-GE3 Vishay
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -100V; -2A; Idm: -12A; 25W, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -100V, Drain current: -2A, Pulsed drain current: -12A, Power dissipation: 25W, Case: DPAK; TO252, Gate-source voltage: ±20V, On-state resistance: 1.2Ω, Mounting: SMD, Gate charge: 8.7nC, Kind of package: reel; tape, Kind of channel: enhanced, кількість в упаковці: 1 шт.
Інші пропозиції SIHFR9110TR-GE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| SIHFR9110TR-GE3 | Виробник : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -2A; Idm: -12A; 25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -2A Pulsed drain current: -12A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: SMD Gate charge: 8.7nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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| SIHFR9110TR-GE3 | Виробник : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -2A; Idm: -12A; 25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -2A Pulsed drain current: -12A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: SMD Gate charge: 8.7nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |