SIHFR220TRL-GE3 VISHAY
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3A; Idm: 19A; 42W; DPAK,TO252
Mounting: SMD
Case: DPAK; TO252
Kind of package: reel; tape
Power dissipation: 42W
Polarisation: unipolar
Gate charge: 14nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 19A
Drain-source voltage: 200V
Drain current: 3A
On-state resistance: 0.8Ω
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3A; Idm: 19A; 42W; DPAK,TO252
Mounting: SMD
Case: DPAK; TO252
Kind of package: reel; tape
Power dissipation: 42W
Polarisation: unipolar
Gate charge: 14nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 19A
Drain-source voltage: 200V
Drain current: 3A
On-state resistance: 0.8Ω
Type of transistor: N-MOSFET
на замовлення 2950 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
8+ | 54.87 грн |
11+ | 35.67 грн |
25+ | 32.15 грн |
36+ | 24.73 грн |
98+ | 23.23 грн |
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Технічний опис SIHFR220TRL-GE3 VISHAY
Description: MOSFET N-CH 200V 4.8A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc), Rds On (Max) @ Id, Vgs: 800mOhm @ 2.9A, 10V, Power Dissipation (Max): 2.5W (Ta), 42W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V.
Інші пропозиції SIHFR220TRL-GE3 за ціною від 27.87 грн до 65.85 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||
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SIHFR220TRL-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 3A; Idm: 19A; 42W; DPAK,TO252 Mounting: SMD Case: DPAK; TO252 Kind of package: reel; tape Power dissipation: 42W Polarisation: unipolar Gate charge: 14nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 19A Drain-source voltage: 200V Drain current: 3A On-state resistance: 0.8Ω Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
на замовлення 2950 шт: термін постачання 14-21 дні (днів) |
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SIHFR220TRL-GE3 | Виробник : Vishay | Trans MOSFET N-CH 200V 4.8A 3-Pin(2+Tab) DPAK T/R |
товар відсутній |
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SIHFR220TRL-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 200V 4.8A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 2.9A, 10V Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V |
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SIHFR220TRL-GE3 | Виробник : Vishay / Siliconix | MOSFETs |
товар відсутній |