SIHA24N65EF-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: N-CHANNEL 650V
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 156mOhm @ 12A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2774 pF @ 100 V
Description: N-CHANNEL 650V
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 156mOhm @ 12A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2774 pF @ 100 V
на замовлення 1769 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 397.62 грн |
50+ | 303.35 грн |
100+ | 260 грн |
500+ | 216.89 грн |
1000+ | 185.72 грн |
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Технічний опис SIHA24N65EF-GE3 Vishay Siliconix
Description: N-CHANNEL 650V, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 156mOhm @ 12A, 10V, Power Dissipation (Max): 39W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220 Full Pack, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2774 pF @ 100 V.
Інші пропозиції SIHA24N65EF-GE3
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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SIHA24N65EF-GE3 | Виробник : Vishay | E Series Power MOSFET with Fast Body Diode |
товар відсутній |
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SIHA24N65EF-GE3 | Виробник : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 65A; 39W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 6A Pulsed drain current: 65A Power dissipation: 39W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 156mΩ Mounting: THT Gate charge: 122nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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SIHA24N65EF-GE3 | Виробник : Vishay / Siliconix | MOSFETs TO220 650V 10A N-CH MOSFET |
товар відсутній |
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SIHA24N65EF-GE3 | Виробник : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 65A; 39W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 6A Pulsed drain current: 65A Power dissipation: 39W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 156mΩ Mounting: THT Gate charge: 122nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |