SICW280N120A-BP Micro Commercial Co
Виробник: Micro Commercial CoDescription: MOSFET N-CH 1200V 10A TO247AB
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 5A, 20V
Power Dissipation (Max): 97W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-247AB
Drive Voltage (Max Rds On, Min Rds On): 16V, 20V
Vgs (Max): +22V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 357 pF @ 1000 V
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Технічний опис SICW280N120A-BP Micro Commercial Co
Description: MOSFET N-CH 1200V 10A TO247AB, Packaging: Tape & Reel (TR), Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 330mOhm @ 5A, 20V, Power Dissipation (Max): 97W (Tc), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: TO-247AB, Drive Voltage (Max Rds On, Min Rds On): 16V, 20V, Vgs (Max): +22V, -5V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 357 pF @ 1000 V.