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SICRF6650

SICRF6650 SMC Diode Solutions

SICR6650%20SICRB6650%20SICRD6650%20SICRF6650%20N1934%20REV.-.pdf Виробник: SMC Diode Solutions
Description: DIODE SIL CARB 650V 6A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 150pF @ 5V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
на замовлення 132 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+165.83 грн
10+ 132.85 грн
100+ 105.75 грн
Мінімальне замовлення: 2
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Технічний опис SICRF6650 SMC Diode Solutions

Description: DIODE SIL CARB 650V 6A ITO220AC, Packaging: Tube, Package / Case: TO-220-2 Full Pack, Isolated Tab, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 150pF @ 5V, 1MHz, Current - Average Rectified (Io): 6A, Supplier Device Package: ITO-220AC, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A, Current - Reverse Leakage @ Vr: 50 µA @ 650 V.