SI7892BDP-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 15A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 25A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3775 pF @ 15 V
Description: MOSFET N-CH 30V 15A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 25A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3775 pF @ 15 V
на замовлення 1581 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3+ | 131.5 грн |
10+ | 105.05 грн |
100+ | 83.58 грн |
500+ | 66.37 грн |
1000+ | 56.31 грн |
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Технічний опис SI7892BDP-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 30V 15A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), Rds On (Max) @ Id, Vgs: 4.2mOhm @ 25A, 10V, Power Dissipation (Max): 1.8W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 3775 pF @ 15 V.
Інші пропозиції SI7892BDP-T1-GE3 за ціною від 88.48 грн до 163.65 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||
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SI7892BDP-T1-GE3 | Виробник : Vishay / Siliconix | MOSFET 30V 25A 5.4W 4.2mohm @ 10V |
на замовлення 2793 шт: термін постачання 21-30 дні (днів) |
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SI7892BDP-T1-GE3 |
на замовлення 100 шт: термін постачання 14-28 дні (днів) |
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SI7892BDP-T1-GE3 | Виробник : Vishay | Trans MOSFET N-CH 30V 15A 8-Pin PowerPAK SO T/R |
товар відсутній |
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SI7892BDP-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 25A; Idm: 60A; 5W Case: PowerPAK® SO8 Mounting: SMD Kind of package: reel; tape Technology: TrenchFET® Power dissipation: 5W Polarisation: unipolar Gate charge: 40nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 60A Drain-source voltage: 30V Drain current: 25A On-state resistance: 5.7mΩ Type of transistor: N-MOSFET кількість в упаковці: 3000 шт |
товар відсутній |
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SI7892BDP-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 30V 15A PPAK SO-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 25A, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3775 pF @ 15 V |
товар відсутній |
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SI7892BDP-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 25A; Idm: 60A; 5W Case: PowerPAK® SO8 Mounting: SMD Kind of package: reel; tape Technology: TrenchFET® Power dissipation: 5W Polarisation: unipolar Gate charge: 40nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 60A Drain-source voltage: 30V Drain current: 25A On-state resistance: 5.7mΩ Type of transistor: N-MOSFET |
товар відсутній |