на замовлення 31253 шт:
термін постачання 1097-1106 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 131.76 грн |
| 10+ | 107.54 грн |
| 100+ | 74.09 грн |
| 250+ | 68.91 грн |
| 500+ | 62.65 грн |
| 1000+ | 53.73 грн |
| 3000+ | 53.3 грн |
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Технічний опис SI7469ADP-T1-RE3 Vishay / Siliconix
Description: MOSFET P-CH 80V 7.4A/46A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 46A (Tc), Rds On (Max) @ Id, Vgs: 19.3mOhm @ 10A, 10V, Power Dissipation (Max): 5W (Ta), 73.5W (Tc), Vgs(th) (Max) @ Id: 2.6V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3420 pF @ 40 V.
Інші пропозиції SI7469ADP-T1-RE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| SI7469ADP-T1-RE3 | Виробник : Vishay |
 Trans MOSFET P-CH 40V 90A 8-Pin PowerPAK SO EP T/R |
товар відсутній |
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SI7469ADP-T1-RE3 | Виробник : Vishay |
Trans MOSFET P-CH 80V 7.4A 8-Pin PowerPAK SO EP T/R |
товар відсутній |
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| SI7469ADP-T1-RE3 | Виробник : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -80V; -46A; Idm: -125A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -80V Drain current: -46A Pulsed drain current: -125A Power dissipation: 73.5W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 27mΩ Mounting: SMD Gate charge: 65nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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SI7469ADP-T1-RE3 | Виробник : Vishay Siliconix |
Description: MOSFET P-CH 80V 7.4A/46A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 46A (Tc) Rds On (Max) @ Id, Vgs: 19.3mOhm @ 10A, 10V Power Dissipation (Max): 5W (Ta), 73.5W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: PowerPAK® SO-8 Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3420 pF @ 40 V |
товар відсутній |
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SI7469ADP-T1-RE3 | Виробник : Vishay Siliconix |
Description: MOSFET P-CH 80V 7.4A/46A PPAK Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 46A (Tc) Rds On (Max) @ Id, Vgs: 19.3mOhm @ 10A, 10V Power Dissipation (Max): 5W (Ta), 73.5W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: PowerPAK® SO-8 Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3420 pF @ 40 V |
товар відсутній |
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| SI7469ADP-T1-RE3 | Виробник : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -80V; -46A; Idm: -125A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -80V Drain current: -46A Pulsed drain current: -125A Power dissipation: 73.5W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 27mΩ Mounting: SMD Gate charge: 65nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |