SI7252ADP-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 100V 9.3A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.6W (Ta), 33.8W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 28.7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1266pF @ 50V
Rds On (Max) @ Id, Vgs: 18.6mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26.5nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Description: MOSFET 2N-CH 100V 9.3A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.6W (Ta), 33.8W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 28.7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1266pF @ 50V
Rds On (Max) @ Id, Vgs: 18.6mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26.5nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3000+ | 51.15 грн |
6000+ | 47.41 грн |
9000+ | 45.84 грн |
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Технічний опис SI7252ADP-T1-GE3 Vishay Siliconix
Description: VISHAY - SI7252ADP-T1-GE3 - Dual-MOSFET, n-Kanal, 100 V, 100 V, 28.7 A, 28.7 A, 0.0155 ohm, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 100V, rohsCompliant: YES, Dauer-Drainstrom Id: 28.7A, Dauer-Drainstrom Id, p-Kanal: 28.7A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, Drain-Source-Spannung Vds, p-Kanal: 100V, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 28.7A, Drain-Source-Durchgangswiderstand, p-Kanal: 0.0155ohm, Verlustleistung Pd: 33.8W, Gate-Source-Schwellenspannung, max.: 4V, Verlustleistung, p-Kanal: 33.8W, Drain-Source-Spannung Vds, n-Kanal: 100V, euEccn: NLR, Bauform - Transistor: PowerPAK SO, Qualifizierungsstandard der Automobilindustrie: -, Anzahl der Pins: 8Pin(s), Produktpalette: TrenchFET Series, Drain-Source-Durchgangswiderstand, n-Kanal: 0.0155ohm, productTraceability: Yes-Date/Lot Code, Wandlerpolarität: n-Kanal, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 33.8W, Betriebswiderstand, Rds(on): 0.0155ohm, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, SVHC: Lead (10-Jun-2022).
Інші пропозиції SI7252ADP-T1-GE3 за ціною від 47.55 грн до 140.41 грн
Фото | Назва | Виробник | Інформація |
Доступність |
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SI7252ADP-T1-GE3 | Виробник : Vishay / Siliconix | MOSFETs SO8 100V 28.7A N-CH DUAL |
на замовлення 46469 шт: термін постачання 21-30 дні (днів) |
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SI7252ADP-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET 2N-CH 100V 9.3A PPAK SO8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.6W (Ta), 33.8W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 28.7A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1266pF @ 50V Rds On (Max) @ Id, Vgs: 18.6mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 26.5nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Dual |
на замовлення 11508 шт: термін постачання 21-31 дні (днів) |
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SI7252ADP-T1-GE3 | Виробник : VISHAY |
Description: VISHAY - SI7252ADP-T1-GE3 - Dual-MOSFET, n-Kanal, 100 V, 100 V, 28.7 A, 28.7 A, 0.0155 ohm tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 28.7A Dauer-Drainstrom Id, p-Kanal: 28.7A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 100V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 28.7A Drain-Source-Durchgangswiderstand, p-Kanal: 0.0155ohm Verlustleistung Pd: 33.8W Gate-Source-Schwellenspannung, max.: 4V Verlustleistung, p-Kanal: 33.8W Drain-Source-Spannung Vds, n-Kanal: 100V euEccn: NLR Bauform - Transistor: PowerPAK SO Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.0155ohm productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 33.8W Betriebswiderstand, Rds(on): 0.0155ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C SVHC: Lead (10-Jun-2022) |
на замовлення 10340 шт: термін постачання 21-31 дні (днів) |
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SI7252ADP-T1-GE3 | Виробник : VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 100V; 23A; Idm: 70A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 23A Pulsed drain current: 70A Power dissipation: 21.6W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 22.5mΩ Mounting: SMD Gate charge: 26.5nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 6000 шт |
товар відсутній |
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SI7252ADP-T1-GE3 | Виробник : VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 100V; 23A; Idm: 70A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 23A Pulsed drain current: 70A Power dissipation: 21.6W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 22.5mΩ Mounting: SMD Gate charge: 26.5nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |