SI4153DY-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: P-CHANNEL 30-V (D-S) MOSFET SO-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14.3A (Ta), 19.3A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.1W (Ta), 5.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 15 V
Description: P-CHANNEL 30-V (D-S) MOSFET SO-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14.3A (Ta), 19.3A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.1W (Ta), 5.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 15 V
на замовлення 1723 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
7+ | 48.24 грн |
10+ | 40.01 грн |
100+ | 27.73 грн |
500+ | 21.74 грн |
1000+ | 18.5 грн |
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Технічний опис SI4153DY-T1-GE3 Vishay Siliconix
Description: VISHAY - SI4153DY-T1-GE3 - Leistungs-MOSFET, p-Kanal, 30 V, 19.3 A, 0.0072 ohm, SOIC, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 30V, rohsCompliant: YES, Dauer-Drainstrom Id: 19.3A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 2.5V, euEccn: NLR, Verlustleistung: 5.6W, Bauform - Transistor: SOIC, Anzahl der Pins: 8Pin(s), Produktpalette: TrenchFET Gen III Series, productTraceability: Yes-Date/Lot Code, Kanaltyp: p-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.0072ohm, SVHC: No SVHC (10-Jun-2022).
Інші пропозиції SI4153DY-T1-GE3 за ціною від 15.84 грн до 59.23 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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SI4153DY-T1-GE3 | Виробник : Vishay / Siliconix | MOSFET P-CH 30-V MSFT |
на замовлення 15638 шт: термін постачання 21-30 дні (днів) |
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SI4153DY-T1-GE3 | Виробник : VISHAY |
Description: VISHAY - SI4153DY-T1-GE3 - Leistungs-MOSFET, p-Kanal, 30 V, 19.3 A, 0.0072 ohm, SOIC, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 19.3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 5.6W Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen III Series productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0072ohm SVHC: No SVHC (10-Jun-2022) |
на замовлення 5788 шт: термін постачання 21-31 дні (днів) |
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SI4153DY-T1-GE3 | Виробник : Vishay | Trans MOSFET P-CH 30V 14.3A 8-Pin SOIC N T/R |
товар відсутній |
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SI4153DY-T1-GE3 | Виробник : Vishay | Trans MOSFET P-CH 30V 14.3A 8-Pin SOIC N T/R |
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SI4153DY-T1-GE3 | Виробник : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -19.3A; 5.6W; SO8 Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -19.3A Pulsed drain current: -100A Power dissipation: 5.6W Case: SO8 Gate-source voltage: ±25V On-state resistance: 15mΩ Mounting: SMD Gate charge: 93nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 2500 шт |
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SI4153DY-T1-GE3 | Виробник : Vishay Siliconix |
Description: P-CHANNEL 30-V (D-S) MOSFET SO-8 Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 14.3A (Ta), 19.3A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V Power Dissipation (Max): 3.1W (Ta), 5.6W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 15 V |
товар відсутній |
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SI4153DY-T1-GE3 | Виробник : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -19.3A; 5.6W; SO8 Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -19.3A Pulsed drain current: -100A Power dissipation: 5.6W Case: SO8 Gate-source voltage: ±25V On-state resistance: 15mΩ Mounting: SMD Gate charge: 93nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |