SI4114DY-T1-E3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET N-CH 20V 20A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 10 V
Description: MOSFET N-CH 20V 20A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 10 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2500+ | 52.89 грн |
5000+ | 49.02 грн |
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Технічний опис SI4114DY-T1-E3 Vishay Siliconix
Description: MOSFET N-CH 20V 20A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V, Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: 8-SOIC, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 10 V.
Інші пропозиції SI4114DY-T1-E3 за ціною від 50.31 грн до 117.5 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||
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SI4114DY-T1-E3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 20V 20A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 10 V |
на замовлення 11000 шт: термін постачання 21-31 дні (днів) |
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SI4114DY-T1-E3 | Виробник : Vishay / Siliconix | MOSFET 20V Vds 16V Vgs SO-8 |
на замовлення 4620 шт: термін постачання 21-30 дні (днів) |
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SI4114DYT1E3 | Виробник : VISHAY |
на замовлення 32500 шт: термін постачання 14-28 дні (днів) |
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SI4114DY-T1-E3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 20A; Idm: 50A; 5.7W Mounting: SMD Drain current: 20A On-state resistance: 7mΩ Type of transistor: N-MOSFET Power dissipation: 5.7W Polarisation: unipolar Kind of package: reel; tape Gate charge: 95nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±16V Pulsed drain current: 50A Case: SO8 Drain-source voltage: 20V кількість в упаковці: 2500 шт |
товар відсутній |
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SI4114DY-T1-E3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 20A; Idm: 50A; 5.7W Mounting: SMD Drain current: 20A On-state resistance: 7mΩ Type of transistor: N-MOSFET Power dissipation: 5.7W Polarisation: unipolar Kind of package: reel; tape Gate charge: 95nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±16V Pulsed drain current: 50A Case: SO8 Drain-source voltage: 20V |
товар відсутній |