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SF24GHB0G Taiwan Semiconductor Corporation
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Description: DIODE GEN PURP 200V 2A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 2
Voltage Coupled to Current - Reverse Leakage @ Vr: 200
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
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Технічний опис SF24GHB0G Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A DO204AC, Packaging: Bulk, Package / Case: DO-204AC, DO-15, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35 ns, Technology: Standard, Capacitance @ Vr, F: 40pF @ 4V, 1MHz, Current - Average Rectified (Io): 2A, Supplier Device Package: DO-204AC (DO-15), Operating Temperature - Junction: -55°C ~ 150°C, Grade: Automotive, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A, Current Coupled to Voltage - Forward (Vf) (Max) @ If: 2, Voltage Coupled to Current - Reverse Leakage @ Vr: 200, Current - Reverse Leakage @ Vr: 5 µA @ 200 V, Qualification: AEC-Q101.