SCS210KGC Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: DIODE SIL CARB 1.2KV 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 550pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10
Voltage Coupled to Current - Reverse Leakage @ Vr: 1200
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Description: DIODE SIL CARB 1.2KV 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 550pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10
Voltage Coupled to Current - Reverse Leakage @ Vr: 1200
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
на замовлення 161 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 690.2 грн |
50+ | 368.03 грн |
100+ | 339.39 грн |
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Технічний опис SCS210KGC Rohm Semiconductor
Description: DIODE SIL CARB 1.2KV 10A TO220AC, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 550pF @ 1V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-220AC, Operating Temperature - Junction: 175°C (Max), Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A, Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10, Voltage Coupled to Current - Reverse Leakage @ Vr: 1200, Current - Reverse Leakage @ Vr: 200 µA @ 1200 V.
Інші пропозиції SCS210KGC
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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SCS210KGC | Виробник : ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220AC; 150W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 1.6V Max. load current: 50A Max. forward impulse current: 160A Power dissipation: 150W Kind of package: tube кількість в упаковці: 1 шт |
товар відсутній |
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SCS210KGC | Виробник : ROHM Semiconductor | SiC Schottky Diodes DIODE: 10A 1200V |
товар відсутній |
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SCS210KGC | Виробник : ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220AC; 150W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 1.6V Max. load current: 50A Max. forward impulse current: 160A Power dissipation: 150W Kind of package: tube |
товар відсутній |