SA2T18H450W19SR6 NXP Semiconductors
Виробник: NXP SemiconductorsDescription: RF MOSFET LDMOS 30V NI1230
Packaging: Bulk
Package / Case: NI-1230S-4S4S
Current Rating (Amps): 10µA
Mounting Type: Chassis Mount
Frequency: 1.805GHz ~ 1.88GHz
Configuration: Dual
Power - Output: 89W
Gain: 16.6dB
Technology: LDMOS
Supplier Device Package: NI-1230S-4S4S
Voltage - Rated: 65 V
Voltage - Test: 30 V
Current - Test: 800 mA
на замовлення 25200 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 14889.76 грн |
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Технічний опис SA2T18H450W19SR6 NXP Semiconductors
Description: RF MOSFET LDMOS 30V NI1230, Packaging: Bulk, Package / Case: NI-1230S-4S4S, Current Rating (Amps): 10µA, Mounting Type: Chassis Mount, Frequency: 1.805GHz ~ 1.88GHz, Configuration: Dual, Power - Output: 89W, Gain: 16.6dB, Technology: LDMOS, Supplier Device Package: NI-1230S-4S4S, Voltage - Rated: 65 V, Voltage - Test: 30 V, Current - Test: 800 mA.