RW4E075AJTCL1 Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: NCH 30V 7.5A POWER MOSFET: RW4E0
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 7.5A, 4.5V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 2mA
Supplier Device Package: DFN1616-7T
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 15 V
Description: NCH 30V 7.5A POWER MOSFET: RW4E0
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 7.5A, 4.5V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 2mA
Supplier Device Package: DFN1616-7T
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 15 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3000+ | 33.21 грн |
6000+ | 30.46 грн |
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Технічний опис RW4E075AJTCL1 Rohm Semiconductor
Description: NCH 30V 7.5A POWER MOSFET: RW4E0, Packaging: Tape & Reel (TR), Package / Case: 6-PowerUFDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), Rds On (Max) @ Id, Vgs: 26mOhm @ 7.5A, 4.5V, Power Dissipation (Max): 1.5W (Ta), Vgs(th) (Max) @ Id: 1.5V @ 2mA, Supplier Device Package: DFN1616-7T, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 15 V.
Інші пропозиції RW4E075AJTCL1 за ціною від 28.92 грн до 86.44 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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RW4E075AJTCL1 | Виробник : Rohm Semiconductor |
Description: NCH 30V 7.5A POWER MOSFET: RW4E0 Packaging: Cut Tape (CT) Package / Case: 6-PowerUFDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Rds On (Max) @ Id, Vgs: 26mOhm @ 7.5A, 4.5V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 2mA Supplier Device Package: DFN1616-7T Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 15 V |
на замовлення 11517 шт: термін постачання 21-31 дні (днів) |
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RW4E075AJTCL1 | Виробник : ROHM Semiconductor | MOSFET MOSFET |
на замовлення 5576 шт: термін постачання 21-30 дні (днів) |
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