RJP65T54DPM-E0#T2 Renesas Electronics Corporation
Виробник: Renesas Electronics Corporation
Description: IGBT TRENCH TO-3FP
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.68V @ 15V, 30A
Supplier Device Package: TO-3PF
IGBT Type: Trench
Td (on/off) @ 25°C: 35ns/120ns
Switching Energy: 330µJ (on), 760µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 72 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 63.5 W
Description: IGBT TRENCH TO-3FP
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.68V @ 15V, 30A
Supplier Device Package: TO-3PF
IGBT Type: Trench
Td (on/off) @ 25°C: 35ns/120ns
Switching Energy: 330µJ (on), 760µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 72 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 63.5 W
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Технічний опис RJP65T54DPM-E0#T2 Renesas Electronics Corporation
Description: IGBT TRENCH TO-3FP, Packaging: Tube, Package / Case: TO-3PFM, SC-93-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.68V @ 15V, 30A, Supplier Device Package: TO-3PF, IGBT Type: Trench, Td (on/off) @ 25°C: 35ns/120ns, Switching Energy: 330µJ (on), 760µJ (off), Test Condition: 400V, 30A, 10Ohm, 15V, Gate Charge: 72 nC, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 225 A, Power - Max: 63.5 W.