![RJK0366DPA-02#J0B RJK0366DPA-02#J0B](https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/2640/MFG_FDMS3622S.jpg)
RJK0366DPA-02#J0B Renesas Electronics America Inc
![RNCCS18249-1.pdf?t.download=true&u=5oefqw](/images/adobe-acrobat.png)
Description: MOSFET N-CH 30V 25A 8WPAK
Packaging: Bulk
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 12.5A, 10V
Power Dissipation (Max): 30W (Tc)
Supplier Device Package: 8-WPAK
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 10 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
325+ | 69.95 грн |
Відгуки про товар
Написати відгук
Технічний опис RJK0366DPA-02#J0B Renesas Electronics America Inc
Description: MOSFET N-CH 30V 25A 8WPAK, Packaging: Bulk, Package / Case: 8-WFDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Ta), Rds On (Max) @ Id, Vgs: 10mOhm @ 12.5A, 10V, Power Dissipation (Max): 30W (Tc), Supplier Device Package: 8-WPAK, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 10 V.