на замовлення 391 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 433.04 грн |
| 10+ | 358.19 грн |
| 25+ | 294.21 грн |
| 100+ | 252.49 грн |
| 250+ | 238.1 грн |
| 450+ | 180.55 грн |
Відгуки про товар
Написати відгук
Технічний опис RGTH00TS65DGC11 ROHM Semiconductor
Description: IGBT TRNCH FIELD 650V 85A TO247N, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 54 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A, Supplier Device Package: TO-247N, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 39ns/143ns, Test Condition: 400V, 50A, 10Ohm, 15V, Gate Charge: 94 nC, Current - Collector (Ic) (Max): 85 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 277 W.
Інші пропозиції RGTH00TS65DGC11
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| RGTH00TS65DGC11 | Виробник : ROHM SEMICONDUCTOR |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 50A; 138W; TO247-3 Mounting: THT Kind of package: tube Case: TO247-3 Pulsed collector current: 200A Turn-on time: 102ns Turn-off time: 221ns Type of transistor: IGBT Power dissipation: 138W Gate-emitter voltage: ±30V Collector-emitter voltage: 650V Collector current: 50A Features of semiconductor devices: integrated anti-parallel diode Gate charge: 94nC кількість в упаковці: 1 шт |
товар відсутній |
||
 |
RGTH00TS65DGC11 | Виробник : Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 85A TO247N Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 54 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 39ns/143ns Test Condition: 400V, 50A, 10Ohm, 15V Gate Charge: 94 nC Current - Collector (Ic) (Max): 85 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 200 A Power - Max: 277 W |
товар відсутній |
|
| RGTH00TS65DGC11 | Виробник : ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 138W; TO247-3 Mounting: THT Kind of package: tube Case: TO247-3 Pulsed collector current: 200A Turn-on time: 102ns Turn-off time: 221ns Type of transistor: IGBT Power dissipation: 138W Gate-emitter voltage: ±30V Collector-emitter voltage: 650V Collector current: 50A Features of semiconductor devices: integrated anti-parallel diode Gate charge: 94nC |
товар відсутній |