RGT30NS65DGTL Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: IGBT TRENCH FIELD 650V 30A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 55 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: LPDS
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/64ns
Test Condition: 400V, 15A, 10Ohm, 15V
Gate Charge: 32 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 133 W
Description: IGBT TRENCH FIELD 650V 30A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 55 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: LPDS
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/64ns
Test Condition: 400V, 15A, 10Ohm, 15V
Gate Charge: 32 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 133 W
на замовлення 978 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2+ | 161.85 грн |
10+ | 129.7 грн |
100+ | 103.21 грн |
500+ | 81.96 грн |
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Технічний опис RGT30NS65DGTL Rohm Semiconductor
Description: IGBT TRENCH FIELD 650V 30A LPDS, Packaging: Cut Tape (CT), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 55 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A, Supplier Device Package: LPDS, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 18ns/64ns, Test Condition: 400V, 15A, 10Ohm, 15V, Gate Charge: 32 nC, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 30 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 45 A, Power - Max: 133 W.
Інші пропозиції RGT30NS65DGTL за ціною від 65.24 грн до 188.82 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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RGT30NS65DGTL | Виробник : ROHM Semiconductor | IGBTs 650V 15A IGBT Stop Trench |
на замовлення 852 шт: термін постачання 21-30 дні (днів) |
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RGT30NS65DGTL | Виробник : ROHM |
Description: ROHM - RGT30NS65DGTL - IGBT, Trench, Leuchtfeldblende, 30 A, 1.65 V, 133 W, 650 V, TO-263S, 3 Pin(s) tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.65V MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 133W Bauform - Transistor: TO-263S Anzahl der Pins: 3Pins Produktpalette: - Kollektor-Emitter-Spannung, max.: 650V productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 30A SVHC: Lead (23-Jan-2024) |
на замовлення 992 шт: термін постачання 21-31 дні (днів) |
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RGT30NS65DGTL | Виробник : Rohm Semiconductor |
Description: IGBT TRENCH FIELD 650V 30A LPDS Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 55 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A Supplier Device Package: LPDS IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 18ns/64ns Test Condition: 400V, 15A, 10Ohm, 15V Gate Charge: 32 nC Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 45 A Power - Max: 133 W |
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