RGT30NL65DGTL ROHM Semiconductor
Виробник: ROHM Semiconductor
IGBTs RGT30NL65D is a Field Stop Trench IGBT with low collector - emitter saturation voltage, suitable for General Inverter, UPS, Power Conditioner, Welder.
IGBTs RGT30NL65D is a Field Stop Trench IGBT with low collector - emitter saturation voltage, suitable for General Inverter, UPS, Power Conditioner, Welder.
на замовлення 992 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2+ | 209.81 грн |
10+ | 173.72 грн |
25+ | 135.23 грн |
100+ | 122.29 грн |
250+ | 115.81 грн |
500+ | 109.34 грн |
1000+ | 88.48 грн |
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Технічний опис RGT30NL65DGTL ROHM Semiconductor
Description: IGBT TRENCH FIELD 650V 30A LPDS, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 55 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A, Supplier Device Package: LPDS, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 18ns/64ns, Test Condition: 400V, 15A, 10Ohm, 15V, Gate Charge: 32 nC, Part Status: Active, Current - Collector (Ic) (Max): 30 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 45 A, Power - Max: 133 W.
Інші пропозиції RGT30NL65DGTL
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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RGT30NL65DGTL | Виробник : ROHM |
Description: ROHM - RGT30NL65DGTL - IGBT, 30 A, 1.65 V, 133 W, 650 V, TO-263 (D2PAK), 3 Pin(s) tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.65V MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 133W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pins Produktpalette: - Kollektor-Emitter-Spannung, max.: 650V productTraceability: No Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 30A SVHC: Lead (23-Jan-2024) |
на замовлення 7 шт: термін постачання 21-31 дні (днів) |
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RGT30NL65DGTL | Виробник : ROHM |
Description: ROHM - RGT30NL65DGTL - IGBT, 30 A, 1.65 V, 133 W, 650 V, TO-263 (D2PAK), 3 Pin(s) tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.65V MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 133W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pins Produktpalette: - Kollektor-Emitter-Spannung, max.: 650V productTraceability: No Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 30A SVHC: Lead (23-Jan-2024) |
на замовлення 7 шт: термін постачання 21-31 дні (днів) |
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RGT30NL65DGTL | Виробник : ROHM SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 15A; 66W; TO263 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 15A Power dissipation: 66W Case: TO263 Gate-emitter voltage: ±30V Pulsed collector current: 45A Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Turn-on time: 40ns Turn-off time: 204ns Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
товар відсутній |
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RGT30NL65DGTL | Виробник : Rohm Semiconductor |
Description: IGBT TRENCH FIELD 650V 30A LPDS Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 55 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A Supplier Device Package: LPDS IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 18ns/64ns Test Condition: 400V, 15A, 10Ohm, 15V Gate Charge: 32 nC Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 45 A Power - Max: 133 W |
товар відсутній |
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RGT30NL65DGTL | Виробник : Rohm Semiconductor |
Description: IGBT TRENCH FIELD 650V 30A LPDS Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 55 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A Supplier Device Package: LPDS IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 18ns/64ns Test Condition: 400V, 15A, 10Ohm, 15V Gate Charge: 32 nC Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 45 A Power - Max: 133 W |
товар відсутній |
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RGT30NL65DGTL | Виробник : ROHM SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 15A; 66W; TO263 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 15A Power dissipation: 66W Case: TO263 Gate-emitter voltage: ±30V Pulsed collector current: 45A Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Turn-on time: 40ns Turn-off time: 204ns Features of semiconductor devices: integrated anti-parallel diode |
товар відсутній |